GB201407633D0 - Method of fabricating diodes - Google Patents
Method of fabricating diodesInfo
- Publication number
- GB201407633D0 GB201407633D0 GBGB1407633.5A GB201407633A GB201407633D0 GB 201407633 D0 GB201407633 D0 GB 201407633D0 GB 201407633 A GB201407633 A GB 201407633A GB 201407633 D0 GB201407633 D0 GB 201407633D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- fabricating diodes
- fabricating
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/129—Cathode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/045—Manufacture or treatment of PN junction diodes
-
- H10P30/204—
-
- H10P30/208—
-
- H10P95/50—
-
- H10P95/90—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410260435.XA CN104241121A (en) | 2013-06-12 | 2014-06-12 | Method of fabricating diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1310471.6A GB201310471D0 (en) | 2013-06-12 | 2013-06-12 | Method of fabricating diodes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201407633D0 true GB201407633D0 (en) | 2014-06-11 |
| GB2515631A GB2515631A (en) | 2014-12-31 |
| GB2515631B GB2515631B (en) | 2018-01-03 |
Family
ID=48876162
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1310471.6A Ceased GB201310471D0 (en) | 2013-06-12 | 2013-06-12 | Method of fabricating diodes |
| GB1407633.5A Active GB2515631B (en) | 2013-06-12 | 2014-04-30 | Method of fabricating diodes |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1310471.6A Ceased GB201310471D0 (en) | 2013-06-12 | 2013-06-12 | Method of fabricating diodes |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104241121A (en) |
| GB (2) | GB201310471D0 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105321817A (en) * | 2015-10-26 | 2016-02-10 | 株洲南车时代电气股份有限公司 | Diode and cathode metallization method therefor |
| DE102016112139B3 (en) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | A method of reducing an impurity concentration in a semiconductor body |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482681B1 (en) * | 2000-05-05 | 2002-11-19 | International Rectifier Corporation | Hydrogen implant for buffer zone of punch-through non epi IGBT |
| DE102004047749B4 (en) * | 2004-09-30 | 2008-12-04 | Infineon Technologies Austria Ag | Semiconductor device diode and IGBT as well as suitable manufacturing process |
| US7728409B2 (en) * | 2005-11-10 | 2010-06-01 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US20100015788A1 (en) * | 2007-09-10 | 2010-01-21 | Yuichiro Sasaki | Method for manufacturing semiconductor device |
| JP5733417B2 (en) * | 2011-11-15 | 2015-06-10 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
-
2013
- 2013-06-12 GB GBGB1310471.6A patent/GB201310471D0/en not_active Ceased
-
2014
- 2014-04-30 GB GB1407633.5A patent/GB2515631B/en active Active
- 2014-06-12 CN CN201410260435.XA patent/CN104241121A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB201310471D0 (en) | 2013-07-24 |
| GB2515631B (en) | 2018-01-03 |
| GB2515631A (en) | 2014-12-31 |
| CN104241121A (en) | 2014-12-24 |
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