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GB201407633D0 - Method of fabricating diodes - Google Patents

Method of fabricating diodes

Info

Publication number
GB201407633D0
GB201407633D0 GBGB1407633.5A GB201407633A GB201407633D0 GB 201407633 D0 GB201407633 D0 GB 201407633D0 GB 201407633 A GB201407633 A GB 201407633A GB 201407633 D0 GB201407633 D0 GB 201407633D0
Authority
GB
United Kingdom
Prior art keywords
fabricating diodes
fabricating
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1407633.5A
Other versions
GB2515631B (en
GB2515631A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuzhou CRRC Times Electric Co Ltd
Dynex Semiconductor Ltd
Original Assignee
Zhuzhou CSR Times Electric Co Ltd
Dynex Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhuzhou CSR Times Electric Co Ltd, Dynex Semiconductor Ltd filed Critical Zhuzhou CSR Times Electric Co Ltd
Publication of GB201407633D0 publication Critical patent/GB201407633D0/en
Priority to CN201410260435.XA priority Critical patent/CN104241121A/en
Publication of GB2515631A publication Critical patent/GB2515631A/en
Application granted granted Critical
Publication of GB2515631B publication Critical patent/GB2515631B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129Cathode regions of diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/01Manufacture or treatment
    • H10D8/045Manufacture or treatment of PN junction diodes
    • H10P30/204
    • H10P30/208
    • H10P95/50
    • H10P95/90
GB1407633.5A 2013-06-12 2014-04-30 Method of fabricating diodes Active GB2515631B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410260435.XA CN104241121A (en) 2013-06-12 2014-06-12 Method of fabricating diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1310471.6A GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes

Publications (3)

Publication Number Publication Date
GB201407633D0 true GB201407633D0 (en) 2014-06-11
GB2515631A GB2515631A (en) 2014-12-31
GB2515631B GB2515631B (en) 2018-01-03

Family

ID=48876162

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1310471.6A Ceased GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes
GB1407633.5A Active GB2515631B (en) 2013-06-12 2014-04-30 Method of fabricating diodes

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB1310471.6A Ceased GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes

Country Status (2)

Country Link
CN (1) CN104241121A (en)
GB (2) GB201310471D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105321817A (en) * 2015-10-26 2016-02-10 株洲南车时代电气股份有限公司 Diode and cathode metallization method therefor
DE102016112139B3 (en) * 2016-07-01 2018-01-04 Infineon Technologies Ag A method of reducing an impurity concentration in a semiconductor body

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
DE102004047749B4 (en) * 2004-09-30 2008-12-04 Infineon Technologies Austria Ag Semiconductor device diode and IGBT as well as suitable manufacturing process
US7728409B2 (en) * 2005-11-10 2010-06-01 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing the same
US20100015788A1 (en) * 2007-09-10 2010-01-21 Yuichiro Sasaki Method for manufacturing semiconductor device
JP5733417B2 (en) * 2011-11-15 2015-06-10 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
GB201310471D0 (en) 2013-07-24
GB2515631B (en) 2018-01-03
GB2515631A (en) 2014-12-31
CN104241121A (en) 2014-12-24

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