GB201310471D0 - Method of fabricating diodes - Google Patents

Method of fabricating diodes

Info

Publication number: GB201310471D0
Authority: GB; United Kingdom
Prior art keywords: fabricating diodes; fabricating; diodes
Prior art date: 2013-06-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Ceased

Application number

GBGB1310471.6A

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Zhuzhou CRRC Times Electric Co Ltd

Dynex Semiconductor Ltd

Original Assignee

Dynex Semiconductor Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-06-12

Filing date

2013-06-12

Publication date

2013-07-24

2013-06-12 Application filed by Dynex Semiconductor Ltd filed Critical Dynex Semiconductor Ltd

2013-06-12 Priority to GBGB1310471.6A priority Critical patent/GB201310471D0/en

2013-07-24 Publication of GB201310471D0 publication Critical patent/GB201310471D0/en

2014-04-30 Priority to GB1407633.5A priority patent/GB2515631B/en

2014-06-12 Priority to CN201410260435.XA priority patent/CN104241121A/en

Status Ceased legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/129—Cathode regions of diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/045—Manufacture or treatment of PN junction diodes
- H10P30/204—
- H10P30/208—
- H10P95/50—
- H10P95/90—

GBGB1310471.6A 2013-06-12 2013-06-12 Method of fabricating diodes Ceased GB201310471D0 (en)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
GBGB1310471.6A GB201310471D0 (en)	2013-06-12	2013-06-12	Method of fabricating diodes
GB1407633.5A GB2515631B (en)	2013-06-12	2014-04-30	Method of fabricating diodes
CN201410260435.XA CN104241121A (en)	2013-06-12	2014-06-12	Method of fabricating diodes

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GBGB1310471.6A GB201310471D0 (en)	2013-06-12	2013-06-12	Method of fabricating diodes

Publications (1)

Publication Number	Publication Date
GB201310471D0 true GB201310471D0 (en)	2013-07-24

Family

ID=48876162

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GBGB1310471.6A Ceased GB201310471D0 (en)	2013-06-12	2013-06-12	Method of fabricating diodes
GB1407633.5A Active GB2515631B (en)	2013-06-12	2014-04-30	Method of fabricating diodes

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
GB1407633.5A Active GB2515631B (en)	2013-06-12	2014-04-30	Method of fabricating diodes

Country Status (2)

Country	Link
CN (1)	CN104241121A (en)
GB (2)	GB201310471D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN105321817A (en) *	2015-10-26	2016-02-10	株洲南车时代电气股份有限公司	Diode and cathode metallization method therefor
DE102016112139B3 (en) *	2016-07-01	2018-01-04	Infineon Technologies Ag	A method of reducing an impurity concentration in a semiconductor body

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6482681B1 (en) *	2000-05-05	2002-11-19	International Rectifier Corporation	Hydrogen implant for buffer zone of punch-through non epi IGBT
DE102004047749B4 (en) *	2004-09-30	2008-12-04	Infineon Technologies Austria Ag	Semiconductor device diode and IGBT as well as suitable manufacturing process
US7728409B2 (en) *	2005-11-10	2010-06-01	Fuji Electric Device Technology Co., Ltd.	Semiconductor device and method of manufacturing the same
US20100015788A1 (en) *	2007-09-10	2010-01-21	Yuichiro Sasaki	Method for manufacturing semiconductor device
CN103890920B (en) *	2011-11-15	2017-05-31	富士电机株式会社	The manufacture method of semiconductor device and semiconductor device

2013
- 2013-06-12 GB GBGB1310471.6A patent/GB201310471D0/en not_active Ceased
2014
- 2014-04-30 GB GB1407633.5A patent/GB2515631B/en active Active
- 2014-06-12 CN CN201410260435.XA patent/CN104241121A/en active Pending

Also Published As

Publication number	Publication date
GB201407633D0 (en)	2014-06-11
CN104241121A (en)	2014-12-24
GB2515631A (en)	2014-12-31
GB2515631B (en)	2018-01-03

Publication	Publication Date	Title
GB2520596B (en)	2018-08-15	Manufacturing method
GB201314695D0 (en)	2013-10-02	Method
GB201401248D0 (en)	2014-03-12	Method of manufacture
GB201309057D0 (en)	2013-07-03	Method
GB201316744D0 (en)	2013-11-06	Method
SG11201503368TA (en)	2015-05-28	Method of fabricating semiconductor devices
GB201309928D0 (en)	2013-07-17	Method
GB201313249D0 (en)	2013-09-11	Method
GB201301857D0 (en)	2013-03-20	Method
GB201300409D0 (en)	2013-02-27	Method
GB201305231D0 (en)	2013-05-01	Method of Manufacture
GB201309654D0 (en)	2013-07-17	Method
GB201305714D0 (en)	2013-05-15	Method
GB201301233D0 (en)	2013-03-06	Method
GB201311385D0 (en)	2013-08-14	Method
GB201301094D0 (en)	2013-03-06	Method
GB2515631B (en)	2018-01-03	Method of fabricating diodes
GB201312609D0 (en)	2013-08-28	Method
GB201314054D0 (en)	2013-09-18	Method
GB201311389D0 (en)	2013-08-14	Method
GB201311291D0 (en)	2013-08-14	Method of manufacture
GB201301262D0 (en)	2013-03-06	Method of manufacture
GB201316321D0 (en)	2013-10-30	Method
GB201314396D0 (en)	2013-09-25	Method
GB201314332D0 (en)	2013-09-25	Method

Legal Events

Date	Code	Title	Description
2014-09-10	COOA	Change in applicant's name or ownership of the application	Owner name: DYNEX SEMICONDUCTOR LIMITED Free format text: FORMER OWNER: DYNEX SEMICONDUCTOR LIMITED Owner name: ZHUZHOU CSR TIMES ELECTRIC COMPANY LIMITED Free format text: FORMER OWNER: DYNEX SEMICONDUCTOR LIMITED
2015-02-25	AT	Applications terminated before publication under section 16(1)

Date

Code

Title

Description

2014-09-10

COOA

Change in applicant's name or ownership of the application

Owner name: DYNEX SEMICONDUCTOR LIMITED

Free format text: FORMER OWNER: DYNEX SEMICONDUCTOR LIMITED

Owner name: ZHUZHOU CSR TIMES ELECTRIC COMPANY LIMITED