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GB201318741D0 - Low-temperature methods for spontaneous material spalling - Google Patents

Low-temperature methods for spontaneous material spalling

Info

Publication number
GB201318741D0
GB201318741D0 GBGB1318741.4A GB201318741A GB201318741D0 GB 201318741 D0 GB201318741 D0 GB 201318741D0 GB 201318741 A GB201318741 A GB 201318741A GB 201318741 D0 GB201318741 D0 GB 201318741D0
Authority
GB
United Kingdom
Prior art keywords
temperature
low
spalling
base substrate
room temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1318741.4A
Other versions
GB2503851A (en
GB2503851B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB201318741D0 publication Critical patent/GB201318741D0/en
Publication of GB2503851A publication Critical patent/GB2503851A/en
Application granted granted Critical
Publication of GB2503851B publication Critical patent/GB2503851B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H10P10/128—
    • H10P95/00—

Landscapes

  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Method to (i) introduce additional control into a material spalling process, thus improving both the crack initiation and propagation, and (ii) increase the range of selectable spalling depths are provided. In one embodiment, the method includes providing a stressor layer on a surface of a base substrate at a first temperature which is room temperature. Next, the base substrate including the stressor layer is brought to a second temperature which is less than room temperature. The base substrate is spalled at the second temperature to form a spalled material layer. Thereafter, the spalled material layer is returned to room temperature, i.e., the first temperature.
GB1318741.4A 2011-06-01 2012-05-08 Low-temperature methods for spontaneous material spalling Active GB2503851B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/150,813 US20120309269A1 (en) 2011-06-01 2011-06-01 Low-temperature methods for spontaneous material spalling
PCT/US2012/036860 WO2012166298A1 (en) 2011-06-01 2012-05-08 Low-temperature methods for spontaneous material spalling

Publications (3)

Publication Number Publication Date
GB201318741D0 true GB201318741D0 (en) 2013-12-04
GB2503851A GB2503851A (en) 2014-01-08
GB2503851B GB2503851B (en) 2016-01-20

Family

ID=47259733

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1318741.4A Active GB2503851B (en) 2011-06-01 2012-05-08 Low-temperature methods for spontaneous material spalling

Country Status (5)

Country Link
US (1) US20120309269A1 (en)
CN (1) CN103582934A (en)
DE (1) DE112012002305T5 (en)
GB (1) GB2503851B (en)
WO (1) WO2012166298A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082948B2 (en) * 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US9142412B2 (en) * 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US9079269B2 (en) * 2011-11-22 2015-07-14 International Business Machines Corporation Spalling with laser-defined spall edge regions
US9865769B2 (en) 2015-03-23 2018-01-09 International Business Machines Corporation Back contact LED through spalling
US9472411B1 (en) * 2015-03-27 2016-10-18 International Business Machines Corporation Spalling using dissolvable release layer
US9496128B1 (en) 2015-10-15 2016-11-15 International Business Machines Corporation Controlled spalling utilizing vaporizable release layers
US12046695B2 (en) 2017-05-05 2024-07-23 The Regents Of The University Of California Method of removing a substrate
US20190103637A1 (en) * 2017-09-29 2019-04-04 International Business Machines Corporation Methods of forming rechargeable battery stacks containing a spalled cathode material
JP7295888B2 (en) * 2018-05-30 2023-06-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Method for removing a semiconductor layer from a semiconductor substrate
JP7351546B2 (en) * 2018-10-31 2023-11-13 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア How to obtain smooth surfaces using epitaxial lateral overgrowth
FR3111232B1 (en) * 2020-06-09 2022-05-06 Soitec Silicon On Insulator REMOVABLE TEMPORARY SUBSTRATE COMPATIBLE WITH VERY HIGH TEMPERATURES AND METHOD FOR TRANSFERRING A USEFUL LAYER FROM SAID SUBSTRATE

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085715A (en) * 1999-09-09 2001-03-30 Canon Inc Method for separating semiconductor layer and method for manufacturing solar cell
CN100457090C (en) * 2000-08-31 2009-02-04 斯凯伊药品加拿大公司 Grinding particles
JP4784720B2 (en) * 2001-09-25 2011-10-05 信越化学工業株式会社 Adhesive tape
EP1863100A1 (en) * 2006-05-30 2007-12-05 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Method for the production of thin substrates
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8633097B2 (en) * 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
JP5263225B2 (en) * 2010-06-21 2013-08-14 コニカミノルタビジネステクノロジーズ株式会社 Fixing apparatus, image forming apparatus, and magnetic flux generation unit

Also Published As

Publication number Publication date
CN103582934A (en) 2014-02-12
WO2012166298A1 (en) 2012-12-06
US20120309269A1 (en) 2012-12-06
GB2503851A (en) 2014-01-08
GB2503851B (en) 2016-01-20
DE112012002305T5 (en) 2014-03-13

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