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GB201300276D0 - Photo-detector - Google Patents

Photo-detector

Info

Publication number
GB201300276D0
GB201300276D0 GB201300276A GB201300276A GB201300276D0 GB 201300276 D0 GB201300276 D0 GB 201300276D0 GB 201300276 A GB201300276 A GB 201300276A GB 201300276 A GB201300276 A GB 201300276A GB 201300276 D0 GB201300276 D0 GB 201300276D0
Authority
GB
United Kingdom
Prior art keywords
photo
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB201300276A
Other versions
GB2509545A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Priority to GB1300276.1A priority Critical patent/GB2509545A/en
Publication of GB201300276D0 publication Critical patent/GB201300276D0/en
Publication of GB2509545A publication Critical patent/GB2509545A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/208Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • G01T1/248Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/95Circuit arrangements
    • H10F77/953Circuit arrangements for devices having potential barriers
    • H10F77/959Circuit arrangements for devices having potential barriers for devices working in avalanche mode

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
GB1300276.1A 2013-01-08 2013-01-08 Photo detector comprising SPAD cell array Withdrawn GB2509545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1300276.1A GB2509545A (en) 2013-01-08 2013-01-08 Photo detector comprising SPAD cell array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1300276.1A GB2509545A (en) 2013-01-08 2013-01-08 Photo detector comprising SPAD cell array

Publications (2)

Publication Number Publication Date
GB201300276D0 true GB201300276D0 (en) 2013-02-20
GB2509545A GB2509545A (en) 2014-07-09

Family

ID=47748101

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1300276.1A Withdrawn GB2509545A (en) 2013-01-08 2013-01-08 Photo detector comprising SPAD cell array

Country Status (1)

Country Link
GB (1) GB2509545A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113108818A (en) * 2016-10-12 2021-07-13 意法半导体(R&D)有限公司 Range detection device based on single photon avalanche diode
CN114355369A (en) * 2020-09-28 2022-04-15 宁波飞芯电子科技有限公司 Active quenching and resetting circuit and detection system

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104198058B (en) * 2014-08-05 2017-06-06 清华大学 Single-photon avalanche diode is quenched and reading circuit
FR3034204A1 (en) 2015-03-23 2016-09-30 Stmicroelectronics (Grenoble 2) Sas
US9754981B2 (en) 2015-06-05 2017-09-05 General Electric Company Solid state photomultiplier having an intermediate region coupled between high and low voltage regions and associated detector
US10545193B2 (en) 2016-07-13 2020-01-28 Stmicroelectronics (Research & Development) Limited Charge pump overload detection
JP7089390B2 (en) * 2018-03-30 2022-06-22 キヤノン株式会社 Photoelectric conversion device and its driving method
US11108980B2 (en) 2019-02-04 2021-08-31 Semiconductor Components Industries, Llc Semiconductor devices with single-photon avalanche diode pixels
US11346924B2 (en) 2019-12-09 2022-05-31 Waymo Llc SiPM with cells of different sizes
JP2022039524A (en) * 2020-08-28 2022-03-10 株式会社東芝 Semiconductor device
JP2025014517A (en) * 2023-07-18 2025-01-30 ソニーセミコンダクタソリューションズ株式会社 Optical detection device and optical detection system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4841175A (en) * 1987-01-23 1989-06-20 Siemens Aktiengesellschaft ECL-compatible input/output circuits in CMOS technology
US6876260B2 (en) * 2003-09-09 2005-04-05 Gennum Corporation Elevated front-end transimpedance amplifier
US7547872B2 (en) * 2005-02-14 2009-06-16 Ecole Polytechnique Federale De Lausanne Integrated circuit comprising an array of single photon avalanche diodes
GB2451678A (en) * 2007-08-10 2009-02-11 Sensl Technologies Ltd Silicon photomultiplier circuitry for minimal onset and recovery times
DE102010041805B4 (en) * 2010-09-01 2018-03-22 Siemens Medical Solutions Usa, Inc. Device with a plurality of line or matrix-shaped photosensitive microcells
JP5644294B2 (en) * 2010-09-10 2014-12-24 株式会社豊田中央研究所 Photodetector
GB2485990A (en) * 2010-11-30 2012-06-06 St Microelectronics Res & Dev An optical user-input device using SPADs

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113108818A (en) * 2016-10-12 2021-07-13 意法半导体(R&D)有限公司 Range detection device based on single photon avalanche diode
CN113108818B (en) * 2016-10-12 2023-07-14 意法半导体(R&D)有限公司 Range Detection Device Based on Single Photon Avalanche Diode
CN114355369A (en) * 2020-09-28 2022-04-15 宁波飞芯电子科技有限公司 Active quenching and resetting circuit and detection system

Also Published As

Publication number Publication date
GB2509545A (en) 2014-07-09

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)