GB201300276D0 - Photo-detector - Google Patents
Photo-detectorInfo
- Publication number
- GB201300276D0 GB201300276D0 GB201300276A GB201300276A GB201300276D0 GB 201300276 D0 GB201300276 D0 GB 201300276D0 GB 201300276 A GB201300276 A GB 201300276A GB 201300276 A GB201300276 A GB 201300276A GB 201300276 D0 GB201300276 D0 GB 201300276D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/248—Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
- H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1300276.1A GB2509545A (en) | 2013-01-08 | 2013-01-08 | Photo detector comprising SPAD cell array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1300276.1A GB2509545A (en) | 2013-01-08 | 2013-01-08 | Photo detector comprising SPAD cell array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201300276D0 true GB201300276D0 (en) | 2013-02-20 |
| GB2509545A GB2509545A (en) | 2014-07-09 |
Family
ID=47748101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1300276.1A Withdrawn GB2509545A (en) | 2013-01-08 | 2013-01-08 | Photo detector comprising SPAD cell array |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2509545A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113108818A (en) * | 2016-10-12 | 2021-07-13 | 意法半导体(R&D)有限公司 | Range detection device based on single photon avalanche diode |
| CN114355369A (en) * | 2020-09-28 | 2022-04-15 | 宁波飞芯电子科技有限公司 | Active quenching and resetting circuit and detection system |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104198058B (en) * | 2014-08-05 | 2017-06-06 | 清华大学 | Single-photon avalanche diode is quenched and reading circuit |
| FR3034204A1 (en) | 2015-03-23 | 2016-09-30 | Stmicroelectronics (Grenoble 2) Sas | |
| US9754981B2 (en) | 2015-06-05 | 2017-09-05 | General Electric Company | Solid state photomultiplier having an intermediate region coupled between high and low voltage regions and associated detector |
| US10545193B2 (en) | 2016-07-13 | 2020-01-28 | Stmicroelectronics (Research & Development) Limited | Charge pump overload detection |
| JP7089390B2 (en) * | 2018-03-30 | 2022-06-22 | キヤノン株式会社 | Photoelectric conversion device and its driving method |
| US11108980B2 (en) | 2019-02-04 | 2021-08-31 | Semiconductor Components Industries, Llc | Semiconductor devices with single-photon avalanche diode pixels |
| US11346924B2 (en) | 2019-12-09 | 2022-05-31 | Waymo Llc | SiPM with cells of different sizes |
| JP2022039524A (en) * | 2020-08-28 | 2022-03-10 | 株式会社東芝 | Semiconductor device |
| JP2025014517A (en) * | 2023-07-18 | 2025-01-30 | ソニーセミコンダクタソリューションズ株式会社 | Optical detection device and optical detection system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4841175A (en) * | 1987-01-23 | 1989-06-20 | Siemens Aktiengesellschaft | ECL-compatible input/output circuits in CMOS technology |
| US6876260B2 (en) * | 2003-09-09 | 2005-04-05 | Gennum Corporation | Elevated front-end transimpedance amplifier |
| US7547872B2 (en) * | 2005-02-14 | 2009-06-16 | Ecole Polytechnique Federale De Lausanne | Integrated circuit comprising an array of single photon avalanche diodes |
| GB2451678A (en) * | 2007-08-10 | 2009-02-11 | Sensl Technologies Ltd | Silicon photomultiplier circuitry for minimal onset and recovery times |
| DE102010041805B4 (en) * | 2010-09-01 | 2018-03-22 | Siemens Medical Solutions Usa, Inc. | Device with a plurality of line or matrix-shaped photosensitive microcells |
| JP5644294B2 (en) * | 2010-09-10 | 2014-12-24 | 株式会社豊田中央研究所 | Photodetector |
| GB2485990A (en) * | 2010-11-30 | 2012-06-06 | St Microelectronics Res & Dev | An optical user-input device using SPADs |
-
2013
- 2013-01-08 GB GB1300276.1A patent/GB2509545A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113108818A (en) * | 2016-10-12 | 2021-07-13 | 意法半导体(R&D)有限公司 | Range detection device based on single photon avalanche diode |
| CN113108818B (en) * | 2016-10-12 | 2023-07-14 | 意法半导体(R&D)有限公司 | Range Detection Device Based on Single Photon Avalanche Diode |
| CN114355369A (en) * | 2020-09-28 | 2022-04-15 | 宁波飞芯电子科技有限公司 | Active quenching and resetting circuit and detection system |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2509545A (en) | 2014-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |