GB2009503B - Charge coupled devices - Google Patents
Charge coupled devicesInfo
- Publication number
- GB2009503B GB2009503B GB7846126A GB7846126A GB2009503B GB 2009503 B GB2009503 B GB 2009503B GB 7846126 A GB7846126 A GB 7846126A GB 7846126 A GB7846126 A GB 7846126A GB 2009503 B GB2009503 B GB 2009503B
- Authority
- GB
- United Kingdom
- Prior art keywords
- charge coupled
- coupled devices
- devices
- charge
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/01—Manufacture or treatment
- H10D44/041—Manufacture or treatment having insulated gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7846126A GB2009503B (en) | 1977-10-06 | 1978-11-27 | Charge coupled devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4168477 | 1977-10-06 | ||
| GB7846126A GB2009503B (en) | 1977-10-06 | 1978-11-27 | Charge coupled devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2009503A GB2009503A (en) | 1979-06-13 |
| GB2009503B true GB2009503B (en) | 1982-02-10 |
Family
ID=26264734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7846126A Expired GB2009503B (en) | 1977-10-06 | 1978-11-27 | Charge coupled devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2009503B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD231896A1 (en) * | 1984-08-21 | 1986-01-08 | Werk Fernsehelektronik Veb | LOAD-COUPLED COMPONENT (CCD) |
| DD231895A1 (en) * | 1984-08-21 | 1986-01-08 | Werk Fernsehelektronik Veb | LOAD-COUPLED CONSTRUCTION ELEMENT WITH VOLUME CHANNEL (BCCD) |
| JPH02266537A (en) * | 1989-04-07 | 1990-10-31 | Mitsubishi Electric Corp | charge transfer device |
-
1978
- 1978-11-27 GB GB7846126A patent/GB2009503B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2009503A (en) | 1979-06-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |