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GB2009503A - Charge coupled devices - Google Patents

Charge coupled devices

Info

Publication number
GB2009503A
GB2009503A GB7846126A GB7846126A GB2009503A GB 2009503 A GB2009503 A GB 2009503A GB 7846126 A GB7846126 A GB 7846126A GB 7846126 A GB7846126 A GB 7846126A GB 2009503 A GB2009503 A GB 2009503A
Authority
GB
United Kingdom
Prior art keywords
substrate
ion implantation
masking layer
windows
introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7846126A
Other versions
GB2009503B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Priority to GB7846126A priority Critical patent/GB2009503B/en
Publication of GB2009503A publication Critical patent/GB2009503A/en
Application granted granted Critical
Publication of GB2009503B publication Critical patent/GB2009503B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

In a method of fabricating a two- phase charge coupled device using ion implantation techniques, the charge storage elements of the device are formed by: forming a substrate (1) a first masking layer (7) defining a series of windows (9), one for each storage element; introducing impurity of one conductivity type into the substrate (1) via the windows (9) by ion implantation; forming a second similar masking layer (13, 15, 17) offset along the substrate by half the window length; introducing into the substrate by ion implantation via the parts of the substrate not masked by the two masking layers (7 and 13, 15, 17) an impurity of the opposite conductivity type to, and at twice the concentration of, the first implantation; removing the parts of the first masking layer (7) not covered by the second masking layer (13, 15, 17) and introducing by ion implantation via the windows (29) thus formed impurity of the same conductivity type and at the same concentration as the first implantation. <IMAGE>
GB7846126A 1977-10-06 1978-11-27 Charge coupled devices Expired GB2009503B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7846126A GB2009503B (en) 1977-10-06 1978-11-27 Charge coupled devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4168477 1977-10-06
GB7846126A GB2009503B (en) 1977-10-06 1978-11-27 Charge coupled devices

Publications (2)

Publication Number Publication Date
GB2009503A true GB2009503A (en) 1979-06-13
GB2009503B GB2009503B (en) 1982-02-10

Family

ID=26264734

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7846126A Expired GB2009503B (en) 1977-10-06 1978-11-27 Charge coupled devices

Country Status (1)

Country Link
GB (1) GB2009503B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2163600A (en) * 1984-08-21 1986-02-26 Werk Fernsehelektronik Veb Charge-coupled device with bulk channel (BCCD)
FR2569486A1 (en) * 1984-08-21 1986-02-28 Werk Fernsehelektronik Veb CHARGE COUPLING COMPONENT (CCD) IN PARTICULAR IN THE APPLICATION OF MICROELECTRONICS
US5019884A (en) * 1989-04-07 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Charge transfer device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2163600A (en) * 1984-08-21 1986-02-26 Werk Fernsehelektronik Veb Charge-coupled device with bulk channel (BCCD)
FR2569486A1 (en) * 1984-08-21 1986-02-28 Werk Fernsehelektronik Veb CHARGE COUPLING COMPONENT (CCD) IN PARTICULAR IN THE APPLICATION OF MICROELECTRONICS
FR2569485A1 (en) * 1984-08-21 1986-02-28 Werk Fernsehelektronik Veb COMPONENT FOR COUPLING LOADS WITH VOLUMIC CHANNEL (BCCD) IN PARTICULAR IN THE APPLICATION IN MICROELECTRONICS
GB2164205A (en) * 1984-08-21 1986-03-12 Werk Fernsehelektronik Veb Charge-coupled device
GB2163600B (en) * 1984-08-21 1989-05-17 Werk Fernsehelektronik Veb Charge-coupled device with volume channel (bccd)
US5019884A (en) * 1989-04-07 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Charge transfer device

Also Published As

Publication number Publication date
GB2009503B (en) 1982-02-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee