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GB2005071A - A junction field effect transistor logic semiconductor device - Google Patents

A junction field effect transistor logic semiconductor device

Info

Publication number
GB2005071A
GB2005071A GB7833006A GB7833006A GB2005071A GB 2005071 A GB2005071 A GB 2005071A GB 7833006 A GB7833006 A GB 7833006A GB 7833006 A GB7833006 A GB 7833006A GB 2005071 A GB2005071 A GB 2005071A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
junction field
semiconductor device
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7833006A
Other versions
GB2005071B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of GB2005071A publication Critical patent/GB2005071A/en
Application granted granted Critical
Publication of GB2005071B publication Critical patent/GB2005071B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

A logic device comprises a PNP transistor (Q1) having a base (3), an emitter (1), a collector (2) and acting as an injector. A longitudinal junction field effect transistor Q2 having a source (4), a gate (2), and a drain (7) acts as a driving transistor. The PNP transistor has an N- type semiconductor region (6) of higher impurity concentration than an N-type epitaxial layer (3) acting as the base. The semiconductor region 6 is adjacent the emitter (1) on a side remote from the collector (2) and has a depth greater than the emitter. The epitaxial layer (3) has a relatively low impurity concentration. <IMAGE>
GB7833006A 1977-08-19 1978-08-11 Junction field effect transistor logic semiconductor device Expired GB2005071B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9999477A JPS5432986A (en) 1977-08-19 1977-08-19 Semiconductor device

Publications (2)

Publication Number Publication Date
GB2005071A true GB2005071A (en) 1979-04-11
GB2005071B GB2005071B (en) 1982-03-17

Family

ID=14262177

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7833006A Expired GB2005071B (en) 1977-08-19 1978-08-11 Junction field effect transistor logic semiconductor device

Country Status (4)

Country Link
JP (1) JPS5432986A (en)
CH (1) CH623168A5 (en)
DE (1) DE2833841A1 (en)
GB (1) GB2005071B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123115Y2 (en) * 1980-02-09 1986-07-10
DE3841777C2 (en) * 1988-12-12 1994-06-23 Telefunken Microelectron Semiconductor device with vertical npn planar transistor

Also Published As

Publication number Publication date
DE2833841A1 (en) 1979-03-01
CH623168A5 (en) 1981-05-15
JPS5432986A (en) 1979-03-10
GB2005071B (en) 1982-03-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee