[go: up one dir, main page]

GB1428742A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1428742A
GB1428742A GB2641773A GB2641773A GB1428742A GB 1428742 A GB1428742 A GB 1428742A GB 2641773 A GB2641773 A GB 2641773A GB 2641773 A GB2641773 A GB 2641773A GB 1428742 A GB1428742 A GB 1428742A
Authority
GB
United Kingdom
Prior art keywords
type
conductivity type
epitaxial layer
buried layer
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2641773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB2641773A priority Critical patent/GB1428742A/en
Publication of GB1428742A publication Critical patent/GB1428742A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1428742 Semi-conductor devices FERRANTI Ltd 11 June 1974 [2 June 1973] 26417/73 Heading H1K A semi-conductor device comprises an epitaxial layer 10 of one conductivity type on a substrate 11 of the same conductivity type, a circuit element 13 including both a buried layer 12 of the opposite conductivity type at the interface 14 between the epitaxial layer 10 and the substrate 11 and a region 16 of said one conductivity type within the epitaxial layer 10 and contiguous with the buried layer 12, and a resistor provided by a channel 26 of said one conductivity type passing through and encircled by the buried layer 12. The element 13 is a bi-polar transistor of the collector-diffusion-isolation type, the isoplanar type, the V-ATE type, or the VIP type, in which the emitter, base and collector are provided by the regions 17, 16, and 12 together with an isolation region 15, respectively. Alternatively, the element 13 may be a PN junction FET.
GB2641773A 1973-06-02 1973-06-02 Semiconductor devices Expired GB1428742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2641773A GB1428742A (en) 1973-06-02 1973-06-02 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2641773A GB1428742A (en) 1973-06-02 1973-06-02 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1428742A true GB1428742A (en) 1976-03-17

Family

ID=10243333

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2641773A Expired GB1428742A (en) 1973-06-02 1973-06-02 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB1428742A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450614A1 (en) * 1990-04-04 1991-10-09 Kabushiki Kaisha Toshiba Semiconductor device containing bipolar transistors
EP0673072A3 (en) * 1994-03-18 1995-11-08 Hitachi Ltd Bipolar semiconductor devices.
US6169801B1 (en) 1998-03-16 2001-01-02 Midcom, Inc. Digital isolation apparatus and method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450614A1 (en) * 1990-04-04 1991-10-09 Kabushiki Kaisha Toshiba Semiconductor device containing bipolar transistors
US5111269A (en) * 1990-04-04 1992-05-05 Kabushiki Kaisha Toshiba Bipolar transistor structure containing a resistor which assures reduction in layout area
EP0673072A3 (en) * 1994-03-18 1995-11-08 Hitachi Ltd Bipolar semiconductor devices.
US5608236A (en) * 1994-03-18 1997-03-04 Hitachi, Ltd. Semiconductor device
US6169801B1 (en) 1998-03-16 2001-01-02 Midcom, Inc. Digital isolation apparatus and method

Similar Documents

Publication Publication Date Title
GB1330790A (en) Semiconductor devices
GB1529498A (en) Transistor having integrated protection
GB1246208A (en) Pn junction gated field effect transistor having buried layer
ES393035A1 (en) A SEMICONDUCTOR DEVICE.
GB1372607A (en) Semiconductor devices
GB1220023A (en) Integrated semiconductor circuit arrangement
GB1275359A (en) Mesa-type semiconductor device
GB1090696A (en) Improvements in or relating to semiconductor devices
JPS538572A (en) Field effect type transistor
GB1428742A (en) Semiconductor devices
GB1246864A (en) Transistor
GB1219660A (en) Integrated semiconductor circuits
GB1529216A (en) Lateral bipolar transistor
GB1021147A (en) Divided base four-layer semiconductor device
GB1335037A (en) Field effect transistor
GB1053428A (en)
GB1315583A (en) Integrated circuit
GB1481184A (en) Integrated circuits
GB1534338A (en) Integrated circuits
GB1429696A (en)
JPS57143855A (en) Semiconductor integrated circuit device
EP0391483A3 (en) Bipolar transistor and method of manufacturing the same
JPS5710968A (en) Semiconductor device
GB1324972A (en) Semiconductor integrated circuit drive
GB1528028A (en) Integrated injection logic semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19940610