GB1494342A - Automatic control of crystal growth - Google Patents
Automatic control of crystal growthInfo
- Publication number
- GB1494342A GB1494342A GB1488574A GB1488574A GB1494342A GB 1494342 A GB1494342 A GB 1494342A GB 1488574 A GB1488574 A GB 1488574A GB 1488574 A GB1488574 A GB 1488574A GB 1494342 A GB1494342 A GB 1494342A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- signal
- load cell
- melt
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 10
- 239000000155 melt Substances 0.000 abstract 3
- 230000000694 effects Effects 0.000 abstract 2
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 230000000979 retarding effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1494342 Automatic control of crystal growth NATIONAL RESEARCH DEVELOPMENT CORP 25 March 1975 [3 April 1974 16 Aug 1974] 14885/74 and 36288/74 Heading G3N A crystal is grown by pulling from an electrically heated melt. The crystal weight is measured by a load cell and compared with an expected value to derive a control signal which is used to adjust the power supplied to the melt heater. The control signal is compensated for known effects dependent on the rate of change of crystal radius. As shown in Fig. 1, a semi-conductor crystal 4 is pulled from a melt 1 in a crucible 2 by a pull rod 5 suspended from a load cell 6. The rod 5 is raised and rotated by motors 7, 8. In use, the load cell output is differentiated 9 and supplied to a comparator 12 which also receives a reference voltage 13 which is constant if a crystal of uniform radius is required. The comparator output signal is fed to a phase advance network 14 which compensates for thermal lag in heating coils 3 and the melt 1, and the resulting signal controls a supply circuit 16 for the coils 3. Owing to effects of change in density and surface tension, instability of the control loop may be caused by a term proportional to the rate of change of the crystal radius. This is corrected by feeding back the signal derived from the network 14 through a phase retarding thermal lag simulating circuit 18 to a differentiator 20, the output of which is combined with the signal from differentiator 9 in an adder circuit 21 to modify the input to the comparator 12. In a modification, the signal from the load cell 6 representing the crystal weight is compared directly with the output of a potentiometer whose slider moves axially with the pull rod 5. If the potentiometer is linear, this produces a crystal of constant cross-section, Fig. 4 (not shown). In other embodiments, the feedback loop 18-21 is omitted and the signal from network 14 is passed through parallel differentiating and proportional circuit branches to an adder circuit which supplies a control signal to circuits (15, 16), Figs. 3, 4 (not shown). A suitable differentiating circuit including operational amplifiers is also described, Fig. 5 (not shown).
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1488574A GB1494342A (en) | 1974-04-03 | 1974-04-03 | Automatic control of crystal growth |
| DE2446293A DE2446293C2 (en) | 1974-04-03 | 1974-09-27 | Device for regulating the rod cross-section during Czochralski drawing |
| JP49112680A JPS5848517B2 (en) | 1974-04-03 | 1974-09-30 | How do you know what to do? |
| US05/746,631 US4258003A (en) | 1974-04-03 | 1976-12-01 | Automatic control of crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1488574A GB1494342A (en) | 1974-04-03 | 1974-04-03 | Automatic control of crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1494342A true GB1494342A (en) | 1977-12-07 |
Family
ID=10049252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1488574A Expired GB1494342A (en) | 1974-04-03 | 1974-04-03 | Automatic control of crystal growth |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1494342A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4539067A (en) * | 1981-01-17 | 1985-09-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Method and apparatus for manufacturing single crystals |
| US4565598A (en) * | 1982-01-04 | 1986-01-21 | The Commonwealth Of Australia | Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature |
| GB2206424A (en) * | 1987-06-30 | 1989-01-05 | Nat Res Dev | Single crystal growing |
| US6513436B2 (en) | 2000-02-02 | 2003-02-04 | Delta Caps International Dci | Ignition module for explosive content detonator, method and equipment for making a detonator equipped with same |
| RU2423559C2 (en) * | 2009-08-03 | 2011-07-10 | Общество с ограниченной ответственностью Научно-производственная фирма "ЭКСИТОН" | Procedure for growth of mono crystal of sapphire on seed left in melt under automatic mode |
| EP3011083A4 (en) * | 2013-06-21 | 2017-03-29 | South Dakota Board of Regents | Method of growing germanium crystals |
-
1974
- 1974-04-03 GB GB1488574A patent/GB1494342A/en not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4539067A (en) * | 1981-01-17 | 1985-09-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Method and apparatus for manufacturing single crystals |
| US4565598A (en) * | 1982-01-04 | 1986-01-21 | The Commonwealth Of Australia | Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature |
| GB2206424A (en) * | 1987-06-30 | 1989-01-05 | Nat Res Dev | Single crystal growing |
| GB2206424B (en) * | 1987-06-30 | 1991-07-10 | Nat Res Dev | Growth of semiconductor single crystals |
| US6294017B1 (en) | 1987-06-30 | 2001-09-25 | The National Research Development Corporation | Growth of semiconductor single crystals |
| US6513436B2 (en) | 2000-02-02 | 2003-02-04 | Delta Caps International Dci | Ignition module for explosive content detonator, method and equipment for making a detonator equipped with same |
| RU2423559C2 (en) * | 2009-08-03 | 2011-07-10 | Общество с ограниченной ответственностью Научно-производственная фирма "ЭКСИТОН" | Procedure for growth of mono crystal of sapphire on seed left in melt under automatic mode |
| EP3011083A4 (en) * | 2013-06-21 | 2017-03-29 | South Dakota Board of Regents | Method of growing germanium crystals |
| US10125431B2 (en) | 2013-06-21 | 2018-11-13 | South Dakota Board Of Regents | Method of growing germanium crystals |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19950324 |