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GB1494342A - Automatic control of crystal growth - Google Patents

Automatic control of crystal growth

Info

Publication number
GB1494342A
GB1494342A GB1488574A GB1488574A GB1494342A GB 1494342 A GB1494342 A GB 1494342A GB 1488574 A GB1488574 A GB 1488574A GB 1488574 A GB1488574 A GB 1488574A GB 1494342 A GB1494342 A GB 1494342A
Authority
GB
United Kingdom
Prior art keywords
crystal
signal
load cell
melt
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1488574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Priority to GB1488574A priority Critical patent/GB1494342A/en
Priority to DE2446293A priority patent/DE2446293C2/en
Priority to JP49112680A priority patent/JPS5848517B2/en
Priority to US05/746,631 priority patent/US4258003A/en
Publication of GB1494342A publication Critical patent/GB1494342A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1494342 Automatic control of crystal growth NATIONAL RESEARCH DEVELOPMENT CORP 25 March 1975 [3 April 1974 16 Aug 1974] 14885/74 and 36288/74 Heading G3N A crystal is grown by pulling from an electrically heated melt. The crystal weight is measured by a load cell and compared with an expected value to derive a control signal which is used to adjust the power supplied to the melt heater. The control signal is compensated for known effects dependent on the rate of change of crystal radius. As shown in Fig. 1, a semi-conductor crystal 4 is pulled from a melt 1 in a crucible 2 by a pull rod 5 suspended from a load cell 6. The rod 5 is raised and rotated by motors 7, 8. In use, the load cell output is differentiated 9 and supplied to a comparator 12 which also receives a reference voltage 13 which is constant if a crystal of uniform radius is required. The comparator output signal is fed to a phase advance network 14 which compensates for thermal lag in heating coils 3 and the melt 1, and the resulting signal controls a supply circuit 16 for the coils 3. Owing to effects of change in density and surface tension, instability of the control loop may be caused by a term proportional to the rate of change of the crystal radius. This is corrected by feeding back the signal derived from the network 14 through a phase retarding thermal lag simulating circuit 18 to a differentiator 20, the output of which is combined with the signal from differentiator 9 in an adder circuit 21 to modify the input to the comparator 12. In a modification, the signal from the load cell 6 representing the crystal weight is compared directly with the output of a potentiometer whose slider moves axially with the pull rod 5. If the potentiometer is linear, this produces a crystal of constant cross-section, Fig. 4 (not shown). In other embodiments, the feedback loop 18-21 is omitted and the signal from network 14 is passed through parallel differentiating and proportional circuit branches to an adder circuit which supplies a control signal to circuits (15, 16), Figs. 3, 4 (not shown). A suitable differentiating circuit including operational amplifiers is also described, Fig. 5 (not shown).
GB1488574A 1974-04-03 1974-04-03 Automatic control of crystal growth Expired GB1494342A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB1488574A GB1494342A (en) 1974-04-03 1974-04-03 Automatic control of crystal growth
DE2446293A DE2446293C2 (en) 1974-04-03 1974-09-27 Device for regulating the rod cross-section during Czochralski drawing
JP49112680A JPS5848517B2 (en) 1974-04-03 1974-09-30 How do you know what to do?
US05/746,631 US4258003A (en) 1974-04-03 1976-12-01 Automatic control of crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1488574A GB1494342A (en) 1974-04-03 1974-04-03 Automatic control of crystal growth

Publications (1)

Publication Number Publication Date
GB1494342A true GB1494342A (en) 1977-12-07

Family

ID=10049252

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1488574A Expired GB1494342A (en) 1974-04-03 1974-04-03 Automatic control of crystal growth

Country Status (1)

Country Link
GB (1) GB1494342A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539067A (en) * 1981-01-17 1985-09-03 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for manufacturing single crystals
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature
GB2206424A (en) * 1987-06-30 1989-01-05 Nat Res Dev Single crystal growing
US6513436B2 (en) 2000-02-02 2003-02-04 Delta Caps International Dci Ignition module for explosive content detonator, method and equipment for making a detonator equipped with same
RU2423559C2 (en) * 2009-08-03 2011-07-10 Общество с ограниченной ответственностью Научно-производственная фирма "ЭКСИТОН" Procedure for growth of mono crystal of sapphire on seed left in melt under automatic mode
EP3011083A4 (en) * 2013-06-21 2017-03-29 South Dakota Board of Regents Method of growing germanium crystals

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539067A (en) * 1981-01-17 1985-09-03 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for manufacturing single crystals
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature
GB2206424A (en) * 1987-06-30 1989-01-05 Nat Res Dev Single crystal growing
GB2206424B (en) * 1987-06-30 1991-07-10 Nat Res Dev Growth of semiconductor single crystals
US6294017B1 (en) 1987-06-30 2001-09-25 The National Research Development Corporation Growth of semiconductor single crystals
US6513436B2 (en) 2000-02-02 2003-02-04 Delta Caps International Dci Ignition module for explosive content detonator, method and equipment for making a detonator equipped with same
RU2423559C2 (en) * 2009-08-03 2011-07-10 Общество с ограниченной ответственностью Научно-производственная фирма "ЭКСИТОН" Procedure for growth of mono crystal of sapphire on seed left in melt under automatic mode
EP3011083A4 (en) * 2013-06-21 2017-03-29 South Dakota Board of Regents Method of growing germanium crystals
US10125431B2 (en) 2013-06-21 2018-11-13 South Dakota Board Of Regents Method of growing germanium crystals

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19950324