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GB1128033A - Method and apparatus for melt drawing semiconductor rods - Google Patents

Method and apparatus for melt drawing semiconductor rods

Info

Publication number
GB1128033A
GB1128033A GB43434/65A GB4343465A GB1128033A GB 1128033 A GB1128033 A GB 1128033A GB 43434/65 A GB43434/65 A GB 43434/65A GB 4343465 A GB4343465 A GB 4343465A GB 1128033 A GB1128033 A GB 1128033A
Authority
GB
United Kingdom
Prior art keywords
voltage
temperature
work coil
output
melt drawing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43434/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of GB1128033A publication Critical patent/GB1128033A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,128,033. Automatic temperature control for melt drawing semiconductor rods. MONSANTO CO. Oct. 13, 1965 [Oct. 13, 1964], No. 43434/65. Heading G3R. A system for automatically controlling the temperature of a semiconductor material in the melt drawing of rods thereof comprises anticipatory means for restoring the voltage applied to the melting apparatus should this voltage tend to change. A rod 51 of semi-conductor material is drawn from a susceptor 52 wherein the material is melted by means of induction heating by a work coil 53 supplied from a high frequency generator 54 which includes a resonating capacitor 55. The temperature of the material is detected by a thermopile or bolometer 56 producing a voltage which is applied to a self-balancing potentiometer 57, wherein is set the desired temperature, so as to produce a temperature error voltage. This error voltage is applied by way of a high gain, high impedance amplifier 58 and a magnetic amplifier 59 to a saturable reactor 60 so as to control the supply to the high frequency generator 54 and thus the output of the work coil 53. The anticipatory circuit comprises a capacitive potential divider 61, 62 for measuring the work coil voltage followed by a rectifier 63 and cathode follower 64, the output which is applied to the amplifier 58 wherein it is added to the error voltage from the self-balancing potentiometer 57 to provide a further, faster, control over the output of the work coil 53.
GB43434/65A 1964-10-13 1965-10-13 Method and apparatus for melt drawing semiconductor rods Expired GB1128033A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US403489A US3284172A (en) 1964-10-13 1964-10-13 Apparatus and process for preparing semiconductor rods

Publications (1)

Publication Number Publication Date
GB1128033A true GB1128033A (en) 1968-09-25

Family

ID=23595967

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43434/65A Expired GB1128033A (en) 1964-10-13 1965-10-13 Method and apparatus for melt drawing semiconductor rods

Country Status (2)

Country Link
US (1) US3284172A (en)
GB (1) GB1128033A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449087A (en) * 1966-06-27 1969-06-10 Commerce Usa Purification by selective crystallization and remelt
US3617392A (en) * 1968-10-29 1971-11-02 Semimetals Inc Power control for crystal growing
DE2220519C3 (en) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Process for crucible-free zone melting of semiconductor rods
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
GB1478192A (en) * 1974-03-29 1977-06-29 Nat Res Dev Automatically controlled crystal growth
US4058429A (en) * 1975-12-04 1977-11-15 Westinghouse Electric Corporation Infrared temperature control of Czochralski crystal growth
JP2785532B2 (en) * 1991-08-24 1998-08-13 信越半導体株式会社 Single crystal rod pulling growth control device
WO2007057925A1 (en) * 2005-11-15 2007-05-24 Galileo Vacuum Systems S.P.A. Device and method for controlling the power supplied to vacuum vaporization sources of metals and other

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2752473A (en) * 1952-06-26 1956-06-26 Babcock & Wilcox Co Magnetic type temperature controller
US2916593A (en) * 1958-07-25 1959-12-08 Gen Electric Induction heating apparatus and its use in silicon production
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
US3177336A (en) * 1962-02-05 1965-04-06 Rca Corp Control apparatus for induction heating system

Also Published As

Publication number Publication date
US3284172A (en) 1966-11-08

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