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GB1468680A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1468680A
GB1468680A GB5651873A GB5651873A GB1468680A GB 1468680 A GB1468680 A GB 1468680A GB 5651873 A GB5651873 A GB 5651873A GB 5651873 A GB5651873 A GB 5651873A GB 1468680 A GB1468680 A GB 1468680A
Authority
GB
United Kingdom
Prior art keywords
plate
semi
conductor
receives
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5651873A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5651873A priority Critical patent/GB1468680A/en
Publication of GB1468680A publication Critical patent/GB1468680A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/0431—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/84—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being selenium or tellurium only 
    • H10P14/265—
    • H10P14/2923—
    • H10P14/3402—

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

1468680 Field effect semi-conductor device STANDARD TELEPHONES & CABLES Ltd 13 Feb 1975 [6 Dec 1973] 56518/73 Heading H1K A field effect device includes electrophoretically deposited semi-conductor material 4, e.g. Se or Te, on an electrically conductive baseplate 1, a pair of current electrodes 7, 8 and a control electrode 9 insulated from the semiconductor 4 by an insulating film 6. As shown, one of a number of identical devices is made over a dimpled or corrugated portion of the plate 1, which may be of Al. Strips 2 of insulating material are formed, e.g. by anodization of the Al, and a layer 3 of nickel selenide is flashed on to the plate 1. The semi-conductor body 4 receives a coating 5 of cadmium selenide and is then lapped and polished to expose the Se or Te which then receives the insulating gate 6 of silicon nitride and electrodes 6-8. The plate is then sub-divided.
GB5651873A 1973-12-06 1973-12-06 Semiconductor device Expired GB1468680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5651873A GB1468680A (en) 1973-12-06 1973-12-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5651873A GB1468680A (en) 1973-12-06 1973-12-06 Semiconductor device

Publications (1)

Publication Number Publication Date
GB1468680A true GB1468680A (en) 1977-03-30

Family

ID=10476828

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5651873A Expired GB1468680A (en) 1973-12-06 1973-12-06 Semiconductor device

Country Status (1)

Country Link
GB (1) GB1468680A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127216A (en) * 1979-07-31 1984-04-04 Sharp Kk Improved structure of thin film transistors and manufacture method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127216A (en) * 1979-07-31 1984-04-04 Sharp Kk Improved structure of thin film transistors and manufacture method thereof

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee