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GB1457800A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1457800A
GB1457800A GB804974A GB804974A GB1457800A GB 1457800 A GB1457800 A GB 1457800A GB 804974 A GB804974 A GB 804974A GB 804974 A GB804974 A GB 804974A GB 1457800 A GB1457800 A GB 1457800A
Authority
GB
United Kingdom
Prior art keywords
regions
semiconductor
mos
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB804974A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1457800A publication Critical patent/GB1457800A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well
    • H10P14/416—
    • H10P76/40—
    • H10W20/01—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

1457800 Semiconductor devices HITACHI Ltd 21 Feb 1974 [24 Feb 1973] 8049/74 Heading H1K MIS device.-An MIS device is made by providing a monocrystalline semiconductor substrate 1, Fig. 1, and a first insulating film 2 covering the substrate 1 and having a hole (3), Fig. 2c, (not shown) exposing the surface of the substrate 1, forming a first conductivity type semiconductor film (4a, 4b) which is monocrystalline in the hole (3) and polycrystalline on the insulating film 2, forming a second insulating film 5 on the semiconductor film (4a, 4b), forming gate electrode material on the second insulating film and removing parts of both to form the gate electrode 7 and to expose parts of the semiconductor film (4a, 4b) on either side of the gate electrode 7, and doping the exposed parts to form second conductivity type first and second regions 8, 9 of monocrystalline semiconductor material forming source and drain regions and third and fourth regions 10a, 10b of polycrystalline semiconductor material forming leads for the first and second regions 8, 9 respectively. A protective film 11 may cover the device and aluminium or molybdenum electrodes 13 deposited to contact the various regions through holes 12 in the film 11. The semiconductor may be silicon, the regions 8, 9, 10a, 10b and the insulating films 2, 5 may be deposited by chemical vapour deposition and the regions 8, 9, 10a, 10b may be diffused with boron or phosphorus or ion implanted. Double MOS devices.-A complementary MOS device is formed in a single substrate 43, Fig. 4, using similar techniques, and includes an isolation region 46 under one MOS device. An enhancement type drive MOS and a depletion type load MOS may be similarly formed, Fig. 3, (not shown), and in an alternative embodiment, Fig. 9, (not shown) the load MOS is formed with polycrystalline source and drain regions for higher impedance. MOSFETS with different threshold voltages may be formed in a single substrate, Fig. 10, (not shown) by using different doping concentrations, and high voltage MOS devices are made by forming resistances (129), Fig. 13a, (not shown). Bipolar devices, Fig. 11, (not shown) are also shown. Reference has been directed by the Comptroller to Specification 1,348,235.
GB804974A 1973-02-24 1974-02-21 Semiconductor devices Expired GB1457800A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48022545A JPS49112574A (en) 1973-02-24 1973-02-24

Publications (1)

Publication Number Publication Date
GB1457800A true GB1457800A (en) 1976-12-08

Family

ID=12085783

Family Applications (1)

Application Number Title Priority Date Filing Date
GB804974A Expired GB1457800A (en) 1973-02-24 1974-02-21 Semiconductor devices

Country Status (2)

Country Link
JP (1) JPS49112574A (en)
GB (1) GB1457800A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824419A1 (en) * 1977-06-03 1978-12-07 Fujitsu Ltd Semiconductor device and method for the production thereof
GB2185851A (en) * 1986-01-25 1987-07-29 Plessey Co Plc Method of fabricating an mos transistor
GB2395602A (en) * 2002-10-26 2004-05-26 Samsung Electronics Co Ltd MOS transistor

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1008186A (en) * 1973-12-03 1977-04-05 Robert L. Luce Method of manufacture of mos transistor with gate connected to source or drain
JPS5297688A (en) * 1976-02-10 1977-08-16 Nec Corp Semiconductor device
JPS5455180A (en) * 1977-10-11 1979-05-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit device
JPS54114186A (en) * 1978-02-27 1979-09-06 Fujitsu Ltd Semiconductor integrated circuit device and its manufacture
JPS5828738B2 (en) * 1978-02-27 1983-06-17 富士通株式会社 semiconductor equipment
JPS5940294B2 (en) * 1978-05-22 1984-09-29 株式会社東芝 complementary circuit
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
JPS5663874A (en) * 1979-10-29 1981-05-30 Hitachi Metals Ltd Hard tool material
JPS63169059A (en) * 1987-01-06 1988-07-13 Seiko Instr & Electronics Ltd Semiconductor device and its manufacture

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824419A1 (en) * 1977-06-03 1978-12-07 Fujitsu Ltd Semiconductor device and method for the production thereof
GB2185851A (en) * 1986-01-25 1987-07-29 Plessey Co Plc Method of fabricating an mos transistor
GB2395602A (en) * 2002-10-26 2004-05-26 Samsung Electronics Co Ltd MOS transistor
GB2395602B (en) * 2002-10-26 2005-03-02 Samsung Electronics Co Ltd MOS transistor and method of manufacturing the same
US7119435B2 (en) 2002-10-26 2006-10-10 Samsung Electronics Co., Ltd. Semiconductor device with source/drain extension layer
DE10341359B4 (en) * 2002-10-26 2007-12-27 Samsung Electronics Co., Ltd., Suwon Semiconductor device and method of making the same

Also Published As

Publication number Publication date
JPS49112574A (en) 1974-10-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940220