GB1461146A - Method for the preparation of -semi-insulating- cadmium telluride - Google Patents
Method for the preparation of -semi-insulating- cadmium tellurideInfo
- Publication number
- GB1461146A GB1461146A GB2005674A GB2005674A GB1461146A GB 1461146 A GB1461146 A GB 1461146A GB 2005674 A GB2005674 A GB 2005674A GB 2005674 A GB2005674 A GB 2005674A GB 1461146 A GB1461146 A GB 1461146A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cadmium telluride
- semi
- preparation
- insulating
- cadmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000002360 preparation method Methods 0.000 title abstract 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052714 tellurium Inorganic materials 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000000746 purification Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1461146 Cadmium telluride AGENCE NATIONALE DE VALORISATION DE LA RECHERCHE 7 May 1974 [11 May 1973] 20056/74 Heading C1A A semi-insulating single crystal of cadmium telluride is prepared by a method in which the concentration of impurities is minimized and the proportion of dislocations, twinning and other crystal defects is reduced by carrying out the preparation in several steps, namely (a) synthesis from high purity (99À99%) cadmium and tellurium in stoichiometric proportions accompanied by crystallization at the melting point of the stoichiometric mixture, (b) purification of the cadmium telluride ingot thus obtained by not less than ten vertical zone-melting passes and (c) monocrystallization in tellurium as solvent at 452-900 C.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7317260A FR2245405B1 (en) | 1973-05-11 | 1973-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1461146A true GB1461146A (en) | 1977-01-13 |
Family
ID=9119238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2005674A Expired GB1461146A (en) | 1973-05-11 | 1974-05-07 | Method for the preparation of -semi-insulating- cadmium telluride |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE814652A (en) |
| DE (1) | DE2422250A1 (en) |
| FR (1) | FR2245405B1 (en) |
| GB (1) | GB1461146A (en) |
| IT (1) | IT1020612B (en) |
| NL (1) | NL7406300A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3375410D1 (en) * | 1982-09-01 | 1988-02-25 | N.V. Philips' Gloeilampenfabrieken |
-
1973
- 1973-05-11 FR FR7317260A patent/FR2245405B1/fr not_active Expired
-
1974
- 1974-05-07 GB GB2005674A patent/GB1461146A/en not_active Expired
- 1974-05-07 BE BE144008A patent/BE814652A/en unknown
- 1974-05-08 DE DE2422250A patent/DE2422250A1/en not_active Withdrawn
- 1974-05-10 NL NL7406300A patent/NL7406300A/xx not_active Application Discontinuation
- 1974-05-10 IT IT63478/74A patent/IT1020612B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2422250A1 (en) | 1974-11-28 |
| IT1020612B (en) | 1977-12-30 |
| BE814652A (en) | 1974-09-02 |
| FR2245405A1 (en) | 1975-04-25 |
| NL7406300A (en) | 1974-11-13 |
| FR2245405B1 (en) | 1977-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| UA7080A1 (en) | Method for producing crystalline thoracemide | |
| KR900013950A (en) | Pharmaceutical composition containing (7α, 17α) -17-hydroxy-7-methyl-19-nor-17-pregine-5 (10) -ene-20-yn-3-one compound and pharmaceutical carrier | |
| GB1286024A (en) | Method of producing single semiconductor crystals | |
| US4003741A (en) | Method of preparation of semiconducting compounds | |
| US4662980A (en) | Process for preparing crystals of Hg1-x Cdx Te | |
| GB1461146A (en) | Method for the preparation of -semi-insulating- cadmium telluride | |
| KR890016014A (en) | Method for producing high purity caprolactam | |
| GB1245914A (en) | Improvements in or relating to the separation of lysine | |
| GB1274798A (en) | A process for preparing 2,2-di(4-hydroxyphenyl) propane of a high degree of purity | |
| GB1434437A (en) | Method and device for the preparation of doped cadmium telluride | |
| EP0199440A1 (en) | A method of manufacturing a single crystal of BaPb1-xBix03 | |
| SU823272A1 (en) | Method of silver iodide purification | |
| JPS5365997A (en) | Manufacturing process of tantalum acid lithium single crystal | |
| US4728388A (en) | Process for producing a monocrystal of a compound by crystallizing a polycrystal of said compound by transferring a solvent zone | |
| KR890700559A (en) | Process for the preparation of para-xylol having a purity of at least 99.5% | |
| JPS5228258A (en) | Method for growth of crystals from liquid phase | |
| GB1450347A (en) | Process for the production of 1,5-dinitroanthraquinone and 1,8- dinitroanthraquinone | |
| SU566424A1 (en) | Method of growing monocrystals of copper-cesium chlorides | |
| GB1499948A (en) | Process for recovering anthracene | |
| JPS5212146A (en) | Process for preparation of p- acetylaminobenzene-sufonylchloride | |
| JPS52133085A (en) | Production of single silicon crystal of high purity | |
| US3433602A (en) | Method for growing single crystals | |
| Brown | The strontium-magnesium phase system[Ph. D. Thesis] | |
| SU678748A1 (en) | Crystal producing method | |
| JPS5795923A (en) | Preparation of beta-methylnaphthalene |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |