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GB1320594A - Manufacture of semi-conductor devices - Google Patents

Manufacture of semi-conductor devices

Info

Publication number
GB1320594A
GB1320594A GB4567471A GB4567471A GB1320594A GB 1320594 A GB1320594 A GB 1320594A GB 4567471 A GB4567471 A GB 4567471A GB 4567471 A GB4567471 A GB 4567471A GB 1320594 A GB1320594 A GB 1320594A
Authority
GB
United Kingdom
Prior art keywords
manufacture
film
electrodes
sept
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4567471A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1320594A publication Critical patent/GB1320594A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

1320594 Electrode deposition for semiconductor devices SIEMENS AG 30 Sept 1971 [30 Sept 1970] 45674/71 Heading H1K An electrode metal (aluminium, magnesium, or titanium) is vapour deposited onto an insulating film (silica or alumina) on a semiconductor body at a uniform rate sufficiently high that the deposit grows at least 100 A/sec. The body and film may be maintained at a temperature in the range 150-300‹ C. during the process. The process is used in the manufacture of the gate electrodes of IGFETs or of contact electrodes (which extend also over the film) in diodes and bipolar transistors or of electrodes in integrated circuits.
GB4567471A 1970-09-30 1971-09-30 Manufacture of semi-conductor devices Expired GB1320594A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2047951A DE2047951C3 (en) 1970-09-30 1970-09-30 Method for manufacturing a semiconductor component

Publications (1)

Publication Number Publication Date
GB1320594A true GB1320594A (en) 1973-06-13

Family

ID=5783733

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4567471A Expired GB1320594A (en) 1970-09-30 1971-09-30 Manufacture of semi-conductor devices

Country Status (9)

Country Link
BE (1) BE773195A (en)
CA (1) CA922819A (en)
CH (1) CH528820A (en)
DE (1) DE2047951C3 (en)
FR (1) FR2108115B1 (en)
GB (1) GB1320594A (en)
IT (1) IT938833B (en)
LU (1) LU63976A1 (en)
NL (1) NL7111383A (en)

Also Published As

Publication number Publication date
CA922819A (en) 1973-03-13
NL7111383A (en) 1972-04-05
FR2108115B1 (en) 1977-04-22
IT938833B (en) 1973-02-10
LU63976A1 (en) 1972-03-01
CH528820A (en) 1972-09-30
FR2108115A1 (en) 1972-05-12
DE2047951B2 (en) 1979-06-13
DE2047951C3 (en) 1980-02-14
BE773195A (en) 1972-01-17
DE2047951A1 (en) 1972-04-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees