GB1320290A - Protective circuit for an insulated gate field effect transistor - Google Patents
Protective circuit for an insulated gate field effect transistorInfo
- Publication number
- GB1320290A GB1320290A GB2387372A GB2387372A GB1320290A GB 1320290 A GB1320290 A GB 1320290A GB 2387372 A GB2387372 A GB 2387372A GB 2387372 A GB2387372 A GB 2387372A GB 1320290 A GB1320290 A GB 1320290A
- Authority
- GB
- United Kingdom
- Prior art keywords
- igfet
- protected
- protective
- gate electrode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
1320290 Semi-conductor devices NATIONAL CASH REGISTER CO 22 May 1972 [8 June 1971] 23873/72 Heading H1K The gate insulation of an IGFET 24 is protected by the provision of a further IGFET 16 having an elongate drain region 18 connected at one end 22 to the gate electrode 30 of the protected IGFET 24 and at the other end 19 to an input terminal 21 and to the gate electrode 10 of the protective IGFET 16, which gate electrode 10 overlies a thicker gate insulating layer than that of the protected device. The source region 14 of the protective IGFET is grounded. In the presence of a potentially damaging voltage overload the IGFET 16 switches on, and the gate of the device 24 is protected by the combination of the draining of current to ground through the device 16 and the distributed resistance of the elongate drain region 18. In the event of a higher voltage overload the input end 19 of the drain region 18 can be arranged to operate as an avalanche breakdown diode, shorting the overload directly to the grounded substrate 17. Drain-to-source punch-through of the protective IGFET 16 may also be arranged to occur at a certain voltage level less than that which would damage the IGFET 24.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15097271A | 1971-06-08 | 1971-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1320290A true GB1320290A (en) | 1973-06-13 |
Family
ID=22536786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2387372A Expired GB1320290A (en) | 1971-06-08 | 1972-05-22 | Protective circuit for an insulated gate field effect transistor |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA980012A (en) |
| DE (1) | DE2227339A1 (en) |
| FR (1) | FR2140436B3 (en) |
| GB (1) | GB1320290A (en) |
| IT (1) | IT956338B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2531846A1 (en) * | 1974-07-16 | 1976-01-29 | Nippon Electric Co | INTEGRATED SEMI-CONDUCTOR CIRCUIT |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119670A (en) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | Semiconductor device |
| IT1213260B (en) * | 1984-12-18 | 1989-12-14 | Sgs Thomson Microelectronics | BRIDGE CIRCUIT OF N-CHANNEL POWER MOS TRANSISTORS INTEGRATED AND PROCEDURE FOR ITS MANUFACTURE. |
| US5399893A (en) * | 1993-08-24 | 1995-03-21 | Motorola, Inc. | Diode protected semiconductor device |
-
1972
- 1972-04-10 CA CA139,341A patent/CA980012A/en not_active Expired
- 1972-05-22 GB GB2387372A patent/GB1320290A/en not_active Expired
- 1972-06-05 FR FR7220057A patent/FR2140436B3/fr not_active Expired
- 1972-06-06 DE DE19722227339 patent/DE2227339A1/en active Pending
- 1972-06-07 IT IT25373/72A patent/IT956338B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2531846A1 (en) * | 1974-07-16 | 1976-01-29 | Nippon Electric Co | INTEGRATED SEMI-CONDUCTOR CIRCUIT |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2140436B3 (en) | 1975-08-08 |
| CA980012A (en) | 1975-12-16 |
| DE2227339A1 (en) | 1972-12-21 |
| IT956338B (en) | 1973-10-10 |
| FR2140436A1 (en) | 1973-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |