[go: up one dir, main page]

GB1131675A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1131675A
GB1131675A GB30144/67A GB3014467A GB1131675A GB 1131675 A GB1131675 A GB 1131675A GB 30144/67 A GB30144/67 A GB 30144/67A GB 3014467 A GB3014467 A GB 3014467A GB 1131675 A GB1131675 A GB 1131675A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
prevented
conductors
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30144/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1131675A publication Critical patent/GB1131675A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10W15/00—
    • H10W15/01—
    • H10W20/40—
    • H10W74/43—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

1,131,675. Semi-conductor devices. HITACHI Ltd. 29 June, 1967 [11 July, 1966], No. 30144/67. Heading H1K. Regions of enhanced conductivity are provided at the surface of a semi-conductor body to prevent current passing between separated devices by an inversion layer which would otherwise be formed under metallic tracks running across the passivation. As shown in Fig. 3 a NOT unit is formed by a P-channel enhancement mode IGFET 12a, 14b, 13a the maximum gate potential of which is clamped to the breakdown voltage of a diode 16a, 11a. Parasitic IGFET action (16a, 17b, 12a) is prevented by the provision of a N<SP>+</SP> region 11b. Particularly if the extent beneath the surface conductors of the highly doped region is large, sharp capacitance variations between conductors and the semi-conductor substrate are also prevented. Reference has been directed by the Comptroller to Specifications 1,059,739 and 1,051,720.
GB30144/67A 1966-07-11 1967-06-29 Semiconductor device Expired GB1131675A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4480466 1966-07-11

Publications (1)

Publication Number Publication Date
GB1131675A true GB1131675A (en) 1968-10-23

Family

ID=12701595

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30144/67A Expired GB1131675A (en) 1966-07-11 1967-06-29 Semiconductor device

Country Status (2)

Country Link
DE (1) DE1589891B (en)
GB (1) GB1131675A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029058A1 (en) * 1969-06-26 1971-01-07 N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) Semiconductor arrangement with a field effect transistor with an isolated gate electrode
DE2044027A1 (en) * 1969-09-05 1971-03-25 Hitachi Ltd Semiconductor arrangement for suppressing the formation of interference MOSFETs in integrated circuits
FR2063062A1 (en) * 1969-09-29 1971-07-02 Sony Corp
US3649885A (en) * 1969-07-03 1972-03-14 Philips Corp Tetrode mosfet with gate safety diode within island zone
FR2323232A1 (en) * 1975-09-08 1977-04-01 Siemens Ag MOUNTING TO PROTECT INPUTS OF INTEGRATED MOS CIRCUITS
EP0072690A3 (en) * 1981-08-17 1983-11-09 Fujitsu Limited A mis device and a method of manufacturing it
EP0360998A3 (en) * 1988-09-27 1990-06-06 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
EP0515833A1 (en) * 1991-05-02 1992-12-02 Nec Corporation Semiconductor integrated circuit device having wells biased with different voltage levels
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029058A1 (en) * 1969-06-26 1971-01-07 N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) Semiconductor arrangement with a field effect transistor with an isolated gate electrode
FR2047958A1 (en) * 1969-06-26 1971-03-19 Philips Nv
US3649885A (en) * 1969-07-03 1972-03-14 Philips Corp Tetrode mosfet with gate safety diode within island zone
DE2044027A1 (en) * 1969-09-05 1971-03-25 Hitachi Ltd Semiconductor arrangement for suppressing the formation of interference MOSFETs in integrated circuits
FR2068743A1 (en) * 1969-09-05 1971-09-03 Hitachi Ltd
FR2063062A1 (en) * 1969-09-29 1971-07-02 Sony Corp
FR2323232A1 (en) * 1975-09-08 1977-04-01 Siemens Ag MOUNTING TO PROTECT INPUTS OF INTEGRATED MOS CIRCUITS
EP0072690A3 (en) * 1981-08-17 1983-11-09 Fujitsu Limited A mis device and a method of manufacturing it
EP0360998A3 (en) * 1988-09-27 1990-06-06 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
EP0515833A1 (en) * 1991-05-02 1992-12-02 Nec Corporation Semiconductor integrated circuit device having wells biased with different voltage levels

Also Published As

Publication number Publication date
DE1589891B (en) 1970-11-26

Similar Documents

Publication Publication Date Title
GB1524864A (en) Monolithic semiconductor arrangements
GB1197154A (en) High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
GB1337220A (en) Monolithic entegrated circuit
GB954947A (en) Surface-potential controlled semiconductor device
GB1304728A (en)
GB1153428A (en) Improvements in Semiconductor Devices.
GB1129200A (en) High frequency field effect transistor
GB1136569A (en) Insulated gate field effect transistors
GB1166568A (en) MOS Type Devices with Protection Against Destructive Breakdown
KR850000804A (en) Semiconductor devices
GB1301192A (en) Semiconductor controlled rectifier device
GB1077794A (en) Electronic circuits having field-effect transistors
GB1518984A (en) Integrated circuit
GB1186421A (en) Insulated-Gate Field-Effect Transistor
GB1131675A (en) Semiconductor device
GB1060208A (en) Avalanche transistor
UST964009I4 (en) High voltage semiconductor structure
GB1322933A (en) Semiconductor device
ES370557A1 (en) A SEMICONDUCTOR DEVICE.
GB1306570A (en) Field effect semiconductor device
GB1134019A (en) Improvements in semi-conductor devices
GB1390135A (en) Insulated gate semiconductor device
GB1471282A (en) Field effect semiconductor devices
GB1304741A (en)
GB1360578A (en) Semiconductor integrated circuits