GB1390039A - Mechano electrical transducer device - Google Patents
Mechano electrical transducer deviceInfo
- Publication number
- GB1390039A GB1390039A GB5533671A GB5533671A GB1390039A GB 1390039 A GB1390039 A GB 1390039A GB 5533671 A GB5533671 A GB 5533671A GB 5533671 A GB5533671 A GB 5533671A GB 1390039 A GB1390039 A GB 1390039A
- Authority
- GB
- United Kingdom
- Prior art keywords
- stress
- channel
- semi
- gate
- capacitative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Pressure Sensors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1390039 Stress-sensitive semi-conductor dedevices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 11 Oct 1973 55336/71 Heading H1K A region of increased mechanical stress is produced in a long thin semi-conductor body by narrowing the width of the body locally; the region of increased stress is in the "channel" area of an isolated "gate' or junction gate structure, and a potential applied to the controlling electrode raises the stress sensitivity of the device. The devices include a PIN diode with a capacitative electrode overlying the channel between P and N regions, a PNP IGFET, an N-type JUGFET, and a PNPN thyristor with a capacitative gate sited to produce a channel between the P-type regions. The thickness of the body may be less than 100 Á. Suitable semi-conductors are germanium, silicon, gallium arsenide, gallium phosphide indium arsenide, and cadmium sulphide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5533671A GB1390039A (en) | 1973-10-11 | 1973-10-11 | Mechano electrical transducer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5533671A GB1390039A (en) | 1973-10-11 | 1973-10-11 | Mechano electrical transducer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1390039A true GB1390039A (en) | 1975-04-09 |
Family
ID=10473615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5533671A Expired GB1390039A (en) | 1973-10-11 | 1973-10-11 | Mechano electrical transducer device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1390039A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2230642B (en) * | 1989-04-21 | 1994-01-12 | Gen Electric | Slab geometry laser medium |
-
1973
- 1973-10-11 GB GB5533671A patent/GB1390039A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2230642B (en) * | 1989-04-21 | 1994-01-12 | Gen Electric | Slab geometry laser medium |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |