GB1388286A - Monocrystalline materials - Google Patents
Monocrystalline materialsInfo
- Publication number
- GB1388286A GB1388286A GB2509772A GB2509772A GB1388286A GB 1388286 A GB1388286 A GB 1388286A GB 2509772 A GB2509772 A GB 2509772A GB 2509772 A GB2509772 A GB 2509772A GB 1388286 A GB1388286 A GB 1388286A
- Authority
- GB
- United Kingdom
- Prior art keywords
- fused
- crucible
- seed crystal
- rod
- antimonide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 9
- 239000013078 crystal Substances 0.000 abstract 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000011236 particulate material Substances 0.000 abstract 3
- 229910052810 boron oxide Inorganic materials 0.000 abstract 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1388286 Crystal pulling SIEMENS AG 26 May 1972 [28 May 1971] 25097/72 Heading BIS In the production of a monocrystal by the method of Czochralski, the material to be pulled by a seed crystal is in part introduced into the crucible in particulate form and fused therein and then the remainder is lowered into the crucible and also fused therein. A layer of protective material e.g. boron oxide is preferably fused on top of the material from which the monocrystal is pulled. The remainder of the material is preferably supplied in the form of a rod which is attached to the seed crystal and lowered into the fused particulate material. After fusion of the rod and attainment of equilibrium in the crucible the seed crystal is dipped into the fused material and the crystal pulled therefrom. The material is preferably a semiconductor such as gallium phosphide, nitride, arsenide, or antimonide, indium arsenide, phosphide or antimonide, or aluminium arsenide or antimonide. The figure shows a preferred method of carrying out the process. In pulling chamber 1, is disposed, between H.F. coil 5 and quartz chamber 6, crucible 2 contained in a graphite suseptor 3, and surrounded by a felt 4. The crucible has an intermediate bottom 22 and is positioned on a stand 9 which is rotatable and moveable vertically by shaft 10. Reference numeral 11, designates the surface of the particulate material and 12 that of the boron oxide layer. Numeral 13 indicates the surface of the fused particulate material. The additional added material is in the form of a rod 14 suspended by dovetail connection 16 from seed crystal 15, and via link rod 17 is lowered into the crucible to give a surface 18 of fused material from which the monocrystal is drawn. Numerals 19 designate viewing tubes.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2126662A DE2126662C3 (en) | 1971-05-28 | 1971-05-28 | Process for the production of a single crystal rod from a semiconducting A (HI) B (V) compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1388286A true GB1388286A (en) | 1975-03-26 |
Family
ID=5809247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2509772A Expired GB1388286A (en) | 1971-05-28 | 1972-05-26 | Monocrystalline materials |
Country Status (10)
| Country | Link |
|---|---|
| AT (1) | AT337780B (en) |
| BE (1) | BE784033A (en) |
| CA (1) | CA968672A (en) |
| CH (1) | CH576281A5 (en) |
| DE (1) | DE2126662C3 (en) |
| FR (1) | FR2139939B1 (en) |
| GB (1) | GB1388286A (en) |
| IT (1) | IT960642B (en) |
| LU (1) | LU65428A1 (en) |
| NL (1) | NL7207055A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4734267A (en) * | 1982-07-15 | 1988-03-29 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for growing compound semiconductor single crystals |
| CN103757691A (en) * | 2014-01-10 | 2014-04-30 | 英利集团有限公司 | Polysilicon material re-putting method |
| CN114481051A (en) * | 2022-01-11 | 2022-05-13 | 先导薄膜材料（广东）有限公司 | Germanium target material and preparation device and preparation method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2420899A1 (en) * | 1974-04-30 | 1975-12-11 | Wacker Chemitronic | METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE |
| DE3640868A1 (en) * | 1986-11-29 | 1988-06-09 | Leybold Ag | Apparatus for determining the diameter of a crystal on pulling from a melt |
| DE10025863A1 (en) | 2000-05-25 | 2001-12-06 | Wacker Chemie Gmbh | Loaded goods and mounting system for the stored goods |
-
1971
- 1971-05-28 DE DE2126662A patent/DE2126662C3/en not_active Expired
-
1972
- 1972-04-26 CH CH622072A patent/CH576281A5/xx not_active IP Right Cessation
- 1972-05-12 AT AT417072A patent/AT337780B/en active
- 1972-05-24 IT IT2475172A patent/IT960642B/en active
- 1972-05-25 FR FR7218737A patent/FR2139939B1/fr not_active Expired
- 1972-05-25 NL NL7207055A patent/NL7207055A/xx unknown
- 1972-05-26 CA CA143,130A patent/CA968672A/en not_active Expired
- 1972-05-26 BE BE784033A patent/BE784033A/en unknown
- 1972-05-26 LU LU65428D patent/LU65428A1/xx unknown
- 1972-05-26 GB GB2509772A patent/GB1388286A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4734267A (en) * | 1982-07-15 | 1988-03-29 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for growing compound semiconductor single crystals |
| CN103757691A (en) * | 2014-01-10 | 2014-04-30 | 英利集团有限公司 | Polysilicon material re-putting method |
| CN103757691B (en) * | 2014-01-10 | 2016-04-20 | 英利集团有限公司 | Polycrystalline silicon material throws method again |
| CN114481051A (en) * | 2022-01-11 | 2022-05-13 | 先导薄膜材料（广东）有限公司 | Germanium target material and preparation device and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2139939B1 (en) | 1976-03-12 |
| FR2139939A1 (en) | 1973-01-12 |
| CH576281A5 (en) | 1976-06-15 |
| AT337780B (en) | 1977-07-25 |
| NL7207055A (en) | 1972-11-30 |
| DE2126662B2 (en) | 1977-06-23 |
| BE784033A (en) | 1972-11-27 |
| IT960642B (en) | 1973-11-30 |
| DE2126662C3 (en) | 1978-11-09 |
| LU65428A1 (en) | 1972-08-24 |
| CA968672A (en) | 1975-06-03 |
| DE2126662A1 (en) | 1972-12-07 |
| ATA417072A (en) | 1976-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |