GB1347108A - Apparatus for growing single crystals - Google Patents
Apparatus for growing single crystalsInfo
- Publication number
- GB1347108A GB1347108A GB2207071A GB2207071A GB1347108A GB 1347108 A GB1347108 A GB 1347108A GB 2207071 A GB2207071 A GB 2207071A GB 2207071 A GB2207071 A GB 2207071A GB 1347108 A GB1347108 A GB 1347108A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heater
- magnetic field
- crystal pulling
- melt
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Furnace Details (AREA)
Abstract
1347108 Crystal pulling NIPPON ELECTRIC CO Ltd 19 April 1971 [18 Feb 1970] 22070/71 Heading BIS In a crystal pulling process, having a heater surrounding a melt contained in a crucible, the A.C., which energises the heater, also supplies a rotary magnetic field to stir the melt. Either a high frequency inductive heater or a resistive heater may be so connected to a polyphase supply as to provide the required rotation of the magnetic field. A resistive heater may be in the form of a vertically slotted highly purified graphite sleeve 4 and be so provided with terminal connections as to form three resistors in delta configuration. In another form, slots run spirally to a common termination (4a, Fig. 7, not shown) which constitutes the centre point of a star configuration. The graphite may be coated with SiC or, alternatively, the heater may be constructed of Wo or Mo. A reversing switch (37, Fig. 5, not shown) may be used to reverse the direction of rotation of the magnetic field. In an example a silicon rod is prepared containing 10<SP>17</SP> atoms of Sb per c.c.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1393270A JPS4949307B1 (en) | 1970-02-18 | 1970-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1347108A true GB1347108A (en) | 1974-02-27 |
Family
ID=11846948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2207071A Expired GB1347108A (en) | 1970-02-18 | 1971-04-19 | Apparatus for growing single crystals |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4949307B1 (en) |
| DE (1) | DE2107646A1 (en) |
| GB (1) | GB1347108A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2144338A (en) * | 1983-08-05 | 1985-03-06 | Toshiba Kk | Single crystal manufacturing apparatus |
| US4619730A (en) * | 1979-09-20 | 1986-10-28 | Sony Corporation | Process for solidification in a magnetic field with a D.C. heater |
| US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
| US5571320A (en) * | 1993-06-01 | 1996-11-05 | Texas Instruments Incorporated | Spiral heater for use in czochralski crystal pullers |
| DE10102126A1 (en) * | 2001-01-18 | 2002-08-22 | Wacker Siltronic Halbleitermat | Method and device for producing a single crystal from silicon |
| US7179331B2 (en) | 2003-10-23 | 2007-02-20 | Crystal Growing Systems Gmbh | Crystal growing equipment |
| CN115852483A (en) * | 2023-02-27 | 2023-03-28 | 杭州天桴光电技术有限公司 | Device and method for preparing round cake-shaped magnesium fluoride crystal coating material |
| CN115852484A (en) * | 2023-02-27 | 2023-03-28 | 杭州天桴光电技术有限公司 | Device and method for efficiently preparing magnesium fluoride polycrystalline optical coating material |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046998A (en) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | Pulling up of single crystal and its device |
| DE102007028547B4 (en) | 2007-06-18 | 2009-10-08 | Forschungsverbund Berlin E.V. | Device for producing crystals from electrically conductive melts |
| DE102007046409B4 (en) | 2007-09-24 | 2009-07-23 | Forschungsverbund Berlin E.V. | Device for producing crystals from electrically conductive melts |
| DE102008027359B4 (en) | 2008-06-04 | 2012-04-12 | Forschungsverbund Berlin E.V. | Process for intensive mixing of electrically conductive melts in crystallization and solidification processes |
| DE102009045680B4 (en) | 2009-10-14 | 2012-03-22 | Forschungsverbund Berlin E.V. | Apparatus and method for producing silicon ingots from the melt by directional solidification |
| DE102009046845A1 (en) | 2009-11-18 | 2011-06-01 | Forschungsverbund Berlin E.V. | Crystallization plant and crystallization process |
| DE102010041061B4 (en) | 2010-09-20 | 2013-10-24 | Forschungsverbund Berlin E.V. | Crystallization plant and crystallization process for producing a block from a material whose melt is electrically conductive |
| DE102012204000A1 (en) * | 2012-03-14 | 2013-09-19 | Siltronic Ag | Annular resistance heater and method for supplying heat to a crystallizing single crystal |
| AT526173B1 (en) * | 2022-05-20 | 2024-05-15 | Ebner Ind Ofenbau | Tempering device |
-
1970
- 1970-02-18 JP JP1393270A patent/JPS4949307B1/ja active Pending
-
1971
- 1971-02-17 DE DE19712107646 patent/DE2107646A1/en active Pending
- 1971-04-19 GB GB2207071A patent/GB1347108A/en not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4619730A (en) * | 1979-09-20 | 1986-10-28 | Sony Corporation | Process for solidification in a magnetic field with a D.C. heater |
| US4622211A (en) * | 1979-09-20 | 1986-11-11 | Sony Corporation | Apparatus for solidification with resistance heater and magnets |
| GB2144338A (en) * | 1983-08-05 | 1985-03-06 | Toshiba Kk | Single crystal manufacturing apparatus |
| US4565671A (en) * | 1983-08-05 | 1986-01-21 | Kabushiki Kaisha Toshiba | Single crystal manufacturing apparatus |
| US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
| US5571320A (en) * | 1993-06-01 | 1996-11-05 | Texas Instruments Incorporated | Spiral heater for use in czochralski crystal pullers |
| DE10102126A1 (en) * | 2001-01-18 | 2002-08-22 | Wacker Siltronic Halbleitermat | Method and device for producing a single crystal from silicon |
| US7771530B2 (en) | 2001-01-18 | 2010-08-10 | Siltronic Ag | Process and apparatus for producing a silicon single crystal |
| US7179331B2 (en) | 2003-10-23 | 2007-02-20 | Crystal Growing Systems Gmbh | Crystal growing equipment |
| CN115852483A (en) * | 2023-02-27 | 2023-03-28 | 杭州天桴光电技术有限公司 | Device and method for preparing round cake-shaped magnesium fluoride crystal coating material |
| CN115852484A (en) * | 2023-02-27 | 2023-03-28 | 杭州天桴光电技术有限公司 | Device and method for efficiently preparing magnesium fluoride polycrystalline optical coating material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4949307B1 (en) | 1974-12-26 |
| DE2107646A1 (en) | 1971-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |