GB1238403A - - Google Patents
Info
- Publication number
- GB1238403A GB1238403A GB1238403DA GB1238403A GB 1238403 A GB1238403 A GB 1238403A GB 1238403D A GB1238403D A GB 1238403DA GB 1238403 A GB1238403 A GB 1238403A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- electrode
- devices
- contact
- heading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W74/43—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
1,238,403. Semi-conductor devices. ITT INDUSTRIES Inc. 30 April, 1969 [1 May, 1968], No. 21961/69. Heading H1K. [Also in Division H1] To avoid regions of high electric stress at the shoulder of a planar PN junction and at the edges of a contact to the surface zone forming the junction, the junction is made shallow and the outer edge of the electrode is formed over thicker passivation than that part of the electrode nearer the contact area. The embodiment described is a high breakdown voltage diode but the invention is applicable also to transistors and other devices.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72568968A | 1968-05-01 | 1968-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1238403A true GB1238403A (en) | 1971-07-07 |
Family
ID=24915576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1238403D Expired GB1238403A (en) | 1968-05-01 | 1969-04-30 |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1920802A1 (en) |
| GB (1) | GB1238403A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2494499A1 (en) * | 1980-11-17 | 1982-05-21 | Int Rectifier Corp | FLAT STRUCTURE FOR HIGH VOLTAGE SEMICONDUCTOR DEVICES |
-
1969
- 1969-04-24 DE DE19691920802 patent/DE1920802A1/en active Pending
- 1969-04-30 GB GB1238403D patent/GB1238403A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2494499A1 (en) * | 1980-11-17 | 1982-05-21 | Int Rectifier Corp | FLAT STRUCTURE FOR HIGH VOLTAGE SEMICONDUCTOR DEVICES |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1920802A1 (en) | 1969-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
| PCNP | Patent ceased through non-payment of renewal fee |