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GB1288384A - - Google Patents

Info

Publication number
GB1288384A
GB1288384A GB534369A GB1288384DA GB1288384A GB 1288384 A GB1288384 A GB 1288384A GB 534369 A GB534369 A GB 534369A GB 1288384D A GB1288384D A GB 1288384DA GB 1288384 A GB1288384 A GB 1288384A
Authority
GB
United Kingdom
Prior art keywords
emitter
fingers
emitter region
base
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB534369A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1288384A publication Critical patent/GB1288384A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P95/00—
    • H10W20/40—

Landscapes

  • Bipolar Transistors (AREA)

Abstract

1288384 Semi-conductor devices TEXAS INSTRUMENTS Ltd 15 Dec 1969 [31 Jan 1969] 5343/69 Heading H1K A power transistor stabilized against localized thermal runaway comprises interdigitated emitter and base regions, wherein the emitter contact overlying the emitter fingers 15 and common emitter region 14 is interrupted over portions 22 of the finger regions near the base of the fingers so that electrical resistances are formed at these portions by the sheet resistance of the emitter region at the interruptions, these resistances serving to stabilize the current density of the device. To reduce localized current injection from those parts of the emitter region adjacent the portion of the emitter contact 20 over the common emitter region, webs 23 of emitter region material extend between and join adjacent emitter fingers 15 to screen the interposed portions 24 of the base fingers 18 from the potential appearing on the common emitter region 14. The transistor may be of germanium or silicon with electrodes of aluminium or molybdenum with gold or aluminium. In alternative embodiments the width of the emitter fingers under the interruptions 22 in the emitter contact may be narrower or wider than the rest of the fingers where the resistance is low and high respectively, to improve tolerance. Other configurations are rib and spine, and star shaped.
GB534369A 1969-01-31 1969-01-31 Expired GB1288384A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB534369 1969-01-31

Publications (1)

Publication Number Publication Date
GB1288384A true GB1288384A (en) 1972-09-06

Family

ID=9794339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB534369A Expired GB1288384A (en) 1969-01-31 1969-01-31

Country Status (4)

Country Link
DE (1) DE1965407A1 (en)
FR (1) FR2029746B1 (en)
GB (1) GB1288384A (en)
NL (1) NL6918915A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (en) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Semiconductor component of the planar-epitaxial type with at least one bipolar power transistor
NL8204878A (en) * 1982-12-17 1984-07-16 Philips Nv SEMICONDUCTOR DEVICE.
DE3926886C2 (en) * 1989-08-16 1999-10-21 Bosch Gmbh Robert Large chip with switching transistors created in planar technology

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor

Also Published As

Publication number Publication date
DE1965407A1 (en) 1970-08-13
FR2029746B1 (en) 1974-12-06
FR2029746A1 (en) 1970-10-23
NL6918915A (en) 1970-08-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years