GB1217880A - Lateral transistor with auxiliary control electrode - Google Patents
Lateral transistor with auxiliary control electrodeInfo
- Publication number
- GB1217880A GB1217880A GB47117/68A GB4711768A GB1217880A GB 1217880 A GB1217880 A GB 1217880A GB 47117/68 A GB47117/68 A GB 47117/68A GB 4711768 A GB4711768 A GB 4711768A GB 1217880 A GB1217880 A GB 1217880A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- collector
- base region
- electrode
- control electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W20/40—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
Abstract
1,217,880. Lateral transistors. RCA CORPORATION. 4 Oct., 1968 [13 Oct., 1967], No. 47117/68. Heading H1K. In a lateral transistor with a substantially annular base region an insulated gate control electrode is disposed over at least part of the base region. In one embodiment in which the emitter and collector are shallow diffused regions they are connected by a thin surface web of the same conductivity type at zero bias but application of an appropriate bias to the control electrode converts this into a base region by surface inversion. In the principal embodiment, Fig. 1, the square emitter 6 and asymmetrical square frame collector 7 are formed by diffusion in a portion of epitaxial N layer 3 isolated by a P + diffused wall extending to the P substrate. Deposited aluminium electrodes 9, 10, 16 extending over a surface oxide layer contact the collector, emitter, and control electrodes while base electrode 12 contacts a U-shaped N+ layer 11. Cross-overs may be avoided by making electrode 16 U-shaped, but it is more effective if it covers the entire base region. The emitter and collector regions may be interdigitated and their roles reversed. By application of suitably poled control signals, the device may be used as a switch or a variable gain amplifier.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67513867A | 1967-10-13 | 1967-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1217880A true GB1217880A (en) | 1970-12-31 |
Family
ID=24709213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB47117/68A Expired GB1217880A (en) | 1967-10-13 | 1968-10-04 | Lateral transistor with auxiliary control electrode |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1803032A1 (en) |
| FR (1) | FR1601603A (en) |
| GB (1) | GB1217880A (en) |
| NL (1) | NL6814580A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2852402A1 (en) * | 1977-12-05 | 1979-06-07 | Hitachi Ltd | LATERAL SEMI-CONDUCTOR COMPONENT |
| CN101814433B (en) * | 2009-02-20 | 2013-02-27 | 联发科技股份有限公司 | Lateral bipolar junction transistor and method of manufacturing the same |
| US8674454B2 (en) | 2009-02-20 | 2014-03-18 | Mediatek Inc. | Lateral bipolar junction transistor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4819113B1 (en) * | 1969-08-27 | 1973-06-11 | ||
| JPS5268382A (en) * | 1975-12-05 | 1977-06-07 | Hitachi Ltd | Semiconductor circuit unit |
| DE3042035C2 (en) * | 1980-11-07 | 1983-11-10 | Schwan-Stabilo Schwanhäußer GmbH & Co, 8500 Nürnberg | Writing, drawing, painting or the like. Device with a replaceable cartridge |
| US5717241A (en) * | 1993-12-09 | 1998-02-10 | Northern Telecom Limited | Gate controlled lateral bipolar junction transistor |
-
1968
- 1968-10-04 GB GB47117/68A patent/GB1217880A/en not_active Expired
- 1968-10-11 FR FR1601603D patent/FR1601603A/fr not_active Expired
- 1968-10-11 NL NL6814580A patent/NL6814580A/xx unknown
- 1968-10-14 DE DE19681803032 patent/DE1803032A1/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2852402A1 (en) * | 1977-12-05 | 1979-06-07 | Hitachi Ltd | LATERAL SEMI-CONDUCTOR COMPONENT |
| CN101814433B (en) * | 2009-02-20 | 2013-02-27 | 联发科技股份有限公司 | Lateral bipolar junction transistor and method of manufacturing the same |
| US8674454B2 (en) | 2009-02-20 | 2014-03-18 | Mediatek Inc. | Lateral bipolar junction transistor |
| US8836043B2 (en) | 2009-02-20 | 2014-09-16 | Mediatek Inc. | Lateral bipolar junction transistor |
| US9324705B2 (en) | 2009-02-20 | 2016-04-26 | Mediatek Inc. | Lateral bipolar junction transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1803032A1 (en) | 1969-05-22 |
| NL6814580A (en) | 1969-04-15 |
| FR1601603A (en) | 1970-09-07 |
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