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GB1245595A - Energy-responsive luminescent device - Google Patents

Energy-responsive luminescent device

Info

Publication number
GB1245595A
GB1245595A GB42126/68A GB4212668A GB1245595A GB 1245595 A GB1245595 A GB 1245595A GB 42126/68 A GB42126/68 A GB 42126/68A GB 4212668 A GB4212668 A GB 4212668A GB 1245595 A GB1245595 A GB 1245595A
Authority
GB
United Kingdom
Prior art keywords
layer
electrode
resistive
layers
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42126/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1245595A publication Critical patent/GB1245595A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

1,245,595. Electroluminescence. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 4 Sept., 1968 [11 Sept., 1967], No. 42126/68. Heading C4S. An energy responsive luminescent device comprises light pervious electrode 110, electroluminescent layer 100 (e.g. 20 to 50 micron thick ZnS), a second electrode 210, energy-responsive layer 200 (e.g. photoconductive, stress sensitive resistive or magneto-resistive) the resistivity of which varies in response to incident radiation (e.g. light, X-rays, or gamma rays) and a grid or net-shaped electrode 301 coated with dielectric 302 in any one or more of the layers between the two electrodes, an A.C. field producing luminescence the waveform of which, by application of a D.C. field, varies as the resistance of layer 200. The EL material may be dispersed in a resistive or accumulatively polarizable dielectric medium (e.g. glass enamel with 5n0 2 and Li or Li and Ti mixed with ZnS powder and fused to electrode 110). Slightly conductive layer 600 may be a mixture of epoxy resin and pulverized carbon or 5n0 2 or of powdered frit, inorganic black pigment, 5n0 2 and ferroelectric BaTiO 3 . The inclusion of CdS : Cl or Si instead of metal oxide renders layer 600 non-linearly resistive. An additional layer of powdered frit or epoxy resin, ferroelectric powder, and light reflective material (e.g. BaTiO 3 orSnO 2 ) may be fused and bonded as a reflecting layer between layers 600 and 100. The single or composite layer 600 should be 5 to 10 microns and 10 to 20 microns thick for non- pervious and reflective layers respectively to ensure the resistivity across the thickness of layer 600 is low relative to EL layer 100. Electrode 110 may be heat resistive, light pervious tin oxide and electrode 310 of W or Cu wire (10 to 30 Á diam. and spaced less than 400 microns) with a 2 to 10 micron thick polyester resin or glass coating 302. Electrode 310 may be on layers 600 or 100 or partly or entirely embedded therein. In the latter case, layer 700 is formed over layers 100 or 600. Alternatively, all the layers may be in the gap between wires 301. Auxiliary resistive layer 700 is preferably of resistivity 10<SP>6</SP> to 10<SP>9</SP> ohm cm. and, if layers 600 and 302 are of vitreous material, is epoxy resin or frit powder with SnO 2 , or if layers 600 and 302 comprise a low m.p. binder, e.g. epoxy resin, layer 700 comprises a similar metal binder with resistive metal oxides (e.g. 5n0 2 ) and a high dielectric material (e.g. ferroelectric BaTiO 3 ) which may be made non-linearly resistive by CdS : Cl or SiC additions in lieu of metaloxide. Photoconductive layer 200, of epoxy resin binder with CdS, CdSe or CdS.Se for instance, should preferably be 50 to 500 microns thick so that its dark resistivity (> 10<SP>9</SP> ohm cm.) is greater than the resistivity of layer 100. Layer 200 may, on omission of layer 700, fill the gaps between wires 301. Electrode 210 may be Au or Al foil, vapour deposited film, silver paint, or a grid embedded in layer 200 for example. Electrode 110 is negatively biased for conversion, amplification and erasure of stored images and positively for writing a stored image. The device may be used as a preamplifier for a T.V. system including a Vidicon image pick-up tube.
GB42126/68A 1967-09-11 1968-09-04 Energy-responsive luminescent device Expired GB1245595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5889767 1967-09-11

Publications (1)

Publication Number Publication Date
GB1245595A true GB1245595A (en) 1971-09-08

Family

ID=13097571

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42126/68A Expired GB1245595A (en) 1967-09-11 1968-09-04 Energy-responsive luminescent device

Country Status (5)

Country Link
US (2) US3675075A (en)
DE (2) DE1789143C3 (en)
FR (1) FR1589727A (en)
GB (1) GB1245595A (en)
NL (1) NL151217B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3749493A (en) * 1972-01-05 1973-07-31 Stanford Research Inst Method and apparatus for producing a contour map of a surface area
JPS5528247A (en) * 1978-08-21 1980-02-28 Hitachi Ltd El element drive circuit
US4521808A (en) * 1979-03-22 1985-06-04 University Of Texas System Electrostatic imaging apparatus
US4763002A (en) * 1979-03-22 1988-08-09 University Of Texas System Photon detector
JPS5915977A (en) * 1982-07-20 1984-01-27 株式会社東芝 Display unit
US5019807A (en) * 1984-07-25 1991-05-28 Staplevision, Inc. Display screen
FR2643180B1 (en) * 1989-02-10 1991-05-10 France Etat MONOCHROME MEMORY DISPLAY DEVICE OF THE PHOTOCONDUCTIVE-ELECTROLUMINESCENT TYPE
US5313066A (en) * 1992-05-20 1994-05-17 E. I. Du Pont De Nemours And Company Electronic method and apparatus for acquiring an X-ray image
US5331179A (en) * 1993-04-07 1994-07-19 E. I. Du Pont De Nemours And Company Method and apparatus for acquiring an X-ray image using a thin film transistor array
DE102012213178A1 (en) * 2012-04-30 2013-10-31 At & S Austria Technologie & Systemtechnik Aktiengesellschaft LED module with printed circuit board

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194516B (en) * 1956-09-05 1965-06-10 Philips Nv Solid-state image converter or image amplifier
US3169192A (en) * 1960-05-14 1965-02-09 Philips Corp Negative picture radiating apparatus
US3210549A (en) * 1960-11-22 1965-10-05 Philips Corp Variable-feedback electro-optical device
GB1063484A (en) * 1962-11-20 1967-03-30 Matsushita Electric Industrial Co Ltd Solid-state image intensifier
US3334229A (en) * 1963-06-15 1967-08-01 Fuji Photo Film Co Ltd Recording method and member of x-ray images and means for displaying said images
US3293441A (en) * 1965-05-12 1966-12-20 Kazan Benjamin Image intensifier with ferroelectric layer and balanced impedances

Also Published As

Publication number Publication date
US3748380A (en) 1973-07-24
NL6812866A (en) 1969-03-13
DE1764940C3 (en) 1975-05-28
NL151217B (en) 1976-10-15
DE1764940B2 (en) 1974-08-22
DE1789143C3 (en) 1975-08-14
DE1789143A1 (en) 1973-04-19
FR1589727A (en) 1970-04-06
US3675075A (en) 1972-07-04
DE1789143B2 (en) 1975-01-09
DE1764940A1 (en) 1972-02-17

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