GB1245595A - Energy-responsive luminescent device - Google Patents
Energy-responsive luminescent deviceInfo
- Publication number
- GB1245595A GB1245595A GB42126/68A GB4212668A GB1245595A GB 1245595 A GB1245595 A GB 1245595A GB 42126/68 A GB42126/68 A GB 42126/68A GB 4212668 A GB4212668 A GB 4212668A GB 1245595 A GB1245595 A GB 1245595A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- electrode
- resistive
- layers
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
Landscapes
- Electroluminescent Light Sources (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
1,245,595. Electroluminescence. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 4 Sept., 1968 [11 Sept., 1967], No. 42126/68. Heading C4S. An energy responsive luminescent device comprises light pervious electrode 110, electroluminescent layer 100 (e.g. 20 to 50 micron thick ZnS), a second electrode 210, energy-responsive layer 200 (e.g. photoconductive, stress sensitive resistive or magneto-resistive) the resistivity of which varies in response to incident radiation (e.g. light, X-rays, or gamma rays) and a grid or net-shaped electrode 301 coated with dielectric 302 in any one or more of the layers between the two electrodes, an A.C. field producing luminescence the waveform of which, by application of a D.C. field, varies as the resistance of layer 200. The EL material may be dispersed in a resistive or accumulatively polarizable dielectric medium (e.g. glass enamel with 5n0 2 and Li or Li and Ti mixed with ZnS powder and fused to electrode 110). Slightly conductive layer 600 may be a mixture of epoxy resin and pulverized carbon or 5n0 2 or of powdered frit, inorganic black pigment, 5n0 2 and ferroelectric BaTiO 3 . The inclusion of CdS : Cl or Si instead of metal oxide renders layer 600 non-linearly resistive. An additional layer of powdered frit or epoxy resin, ferroelectric powder, and light reflective material (e.g. BaTiO 3 orSnO 2 ) may be fused and bonded as a reflecting layer between layers 600 and 100. The single or composite layer 600 should be 5 to 10 microns and 10 to 20 microns thick for non- pervious and reflective layers respectively to ensure the resistivity across the thickness of layer 600 is low relative to EL layer 100. Electrode 110 may be heat resistive, light pervious tin oxide and electrode 310 of W or Cu wire (10 to 30 Á diam. and spaced less than 400 microns) with a 2 to 10 micron thick polyester resin or glass coating 302. Electrode 310 may be on layers 600 or 100 or partly or entirely embedded therein. In the latter case, layer 700 is formed over layers 100 or 600. Alternatively, all the layers may be in the gap between wires 301. Auxiliary resistive layer 700 is preferably of resistivity 10<SP>6</SP> to 10<SP>9</SP> ohm cm. and, if layers 600 and 302 are of vitreous material, is epoxy resin or frit powder with SnO 2 , or if layers 600 and 302 comprise a low m.p. binder, e.g. epoxy resin, layer 700 comprises a similar metal binder with resistive metal oxides (e.g. 5n0 2 ) and a high dielectric material (e.g. ferroelectric BaTiO 3 ) which may be made non-linearly resistive by CdS : Cl or SiC additions in lieu of metaloxide. Photoconductive layer 200, of epoxy resin binder with CdS, CdSe or CdS.Se for instance, should preferably be 50 to 500 microns thick so that its dark resistivity (> 10<SP>9</SP> ohm cm.) is greater than the resistivity of layer 100. Layer 200 may, on omission of layer 700, fill the gaps between wires 301. Electrode 210 may be Au or Al foil, vapour deposited film, silver paint, or a grid embedded in layer 200 for example. Electrode 110 is negatively biased for conversion, amplification and erasure of stored images and positively for writing a stored image. The device may be used as a preamplifier for a T.V. system including a Vidicon image pick-up tube.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5889767 | 1967-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1245595A true GB1245595A (en) | 1971-09-08 |
Family
ID=13097571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB42126/68A Expired GB1245595A (en) | 1967-09-11 | 1968-09-04 | Energy-responsive luminescent device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US3675075A (en) |
| DE (2) | DE1789143C3 (en) |
| FR (1) | FR1589727A (en) |
| GB (1) | GB1245595A (en) |
| NL (1) | NL151217B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3749493A (en) * | 1972-01-05 | 1973-07-31 | Stanford Research Inst | Method and apparatus for producing a contour map of a surface area |
| JPS5528247A (en) * | 1978-08-21 | 1980-02-28 | Hitachi Ltd | El element drive circuit |
| US4521808A (en) * | 1979-03-22 | 1985-06-04 | University Of Texas System | Electrostatic imaging apparatus |
| US4763002A (en) * | 1979-03-22 | 1988-08-09 | University Of Texas System | Photon detector |
| JPS5915977A (en) * | 1982-07-20 | 1984-01-27 | 株式会社東芝 | Display unit |
| US5019807A (en) * | 1984-07-25 | 1991-05-28 | Staplevision, Inc. | Display screen |
| FR2643180B1 (en) * | 1989-02-10 | 1991-05-10 | France Etat | MONOCHROME MEMORY DISPLAY DEVICE OF THE PHOTOCONDUCTIVE-ELECTROLUMINESCENT TYPE |
| US5313066A (en) * | 1992-05-20 | 1994-05-17 | E. I. Du Pont De Nemours And Company | Electronic method and apparatus for acquiring an X-ray image |
| US5331179A (en) * | 1993-04-07 | 1994-07-19 | E. I. Du Pont De Nemours And Company | Method and apparatus for acquiring an X-ray image using a thin film transistor array |
| DE102012213178A1 (en) * | 2012-04-30 | 2013-10-31 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | LED module with printed circuit board |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1194516B (en) * | 1956-09-05 | 1965-06-10 | Philips Nv | Solid-state image converter or image amplifier |
| US3169192A (en) * | 1960-05-14 | 1965-02-09 | Philips Corp | Negative picture radiating apparatus |
| US3210549A (en) * | 1960-11-22 | 1965-10-05 | Philips Corp | Variable-feedback electro-optical device |
| GB1063484A (en) * | 1962-11-20 | 1967-03-30 | Matsushita Electric Industrial Co Ltd | Solid-state image intensifier |
| US3334229A (en) * | 1963-06-15 | 1967-08-01 | Fuji Photo Film Co Ltd | Recording method and member of x-ray images and means for displaying said images |
| US3293441A (en) * | 1965-05-12 | 1966-12-20 | Kazan Benjamin | Image intensifier with ferroelectric layer and balanced impedances |
-
1968
- 1968-09-04 GB GB42126/68A patent/GB1245595A/en not_active Expired
- 1968-09-06 US US758057A patent/US3675075A/en not_active Expired - Lifetime
- 1968-09-09 DE DE1789143A patent/DE1789143C3/en not_active Expired
- 1968-09-09 DE DE1764940A patent/DE1764940C3/en not_active Expired
- 1968-09-10 NL NL686812866A patent/NL151217B/en unknown
- 1968-09-10 FR FR1589727D patent/FR1589727A/fr not_active Expired
-
1972
- 1972-04-21 US US00246244A patent/US3748380A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3748380A (en) | 1973-07-24 |
| NL6812866A (en) | 1969-03-13 |
| DE1764940C3 (en) | 1975-05-28 |
| NL151217B (en) | 1976-10-15 |
| DE1764940B2 (en) | 1974-08-22 |
| DE1789143C3 (en) | 1975-08-14 |
| DE1789143A1 (en) | 1973-04-19 |
| FR1589727A (en) | 1970-04-06 |
| US3675075A (en) | 1972-07-04 |
| DE1789143B2 (en) | 1975-01-09 |
| DE1764940A1 (en) | 1972-02-17 |
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