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GB1118849A - Diffusion of impurities into semiconductors - Google Patents

Diffusion of impurities into semiconductors

Info

Publication number
GB1118849A
GB1118849A GB28793/67A GB2879367A GB1118849A GB 1118849 A GB1118849 A GB 1118849A GB 28793/67 A GB28793/67 A GB 28793/67A GB 2879367 A GB2879367 A GB 2879367A GB 1118849 A GB1118849 A GB 1118849A
Authority
GB
United Kingdom
Prior art keywords
nitrogen
oxygen
deposition
tetraethylorthosilicate
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28793/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1118849A publication Critical patent/GB1118849A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • C30B31/185—Pattern diffusion, e.g. by using masks
    • H10P14/6334—
    • H10P14/6923—
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A phosphorus-doped layer of silicon dioxide is deposited on a semi-conductor substrate by heating mixed streams of oxygen-tetraethylorthosilicate and nitrogen-triethylphosphate. At a deposition temperature of 350-400 DEG C. the ratio of phosphorus to silicon may be 0.1:1.0 or 0.16:1.0. At a deposition temperature of 650-750 DEG C. the ratio of P:Si may be 0.03:1.0 or 0.01:1.0. Fig. 1 (not shown) depicts deposition apparatus having a quartz loading tube for moving substrates between preheat and deposition zones of a quartz furnace, the apparatus having provision for the separate or combined supply of streams of oxygen, oxygen-tetraethylorthosilicate, nitrogen, and nitrogen-triethyl phosphate. A liquid trap and flame arrestor are provided in the common input line to the furnace.
GB28793/67A 1966-07-13 1967-06-22 Diffusion of impurities into semiconductors Expired GB1118849A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56492866A 1966-07-13 1966-07-13

Publications (1)

Publication Number Publication Date
GB1118849A true GB1118849A (en) 1968-07-03

Family

ID=24256471

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28793/67A Expired GB1118849A (en) 1966-07-13 1967-06-22 Diffusion of impurities into semiconductors

Country Status (3)

Country Link
DE (1) DE1619969C3 (en)
FR (1) FR1527293A (en)
GB (1) GB1118849A (en)

Also Published As

Publication number Publication date
DE1619969B2 (en) 1975-05-07
FR1527293A (en) 1968-05-31
DE1619969A1 (en) 1971-03-18
DE1619969C3 (en) 1975-12-18

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