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GB1054360A - - Google Patents

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Publication number
GB1054360A
GB1054360A GB1054360DA GB1054360A GB 1054360 A GB1054360 A GB 1054360A GB 1054360D A GB1054360D A GB 1054360DA GB 1054360 A GB1054360 A GB 1054360A
Authority
GB
United Kingdom
Prior art keywords
substrates
source
semi
gallium
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of GB1054360A publication Critical patent/GB1054360A/en
Active legal-status Critical Current

Links

Classifications

    • H10P32/1404—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H10P32/171—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

1,054,360. Semi - conductor devices. SIEMENS - SCHUCKERTWERKE A.G. Dec. 6, 1965 [Dec. 5, 1964], No. 51708/65. Heading H1K. In a diffusion process in which an impurity source and a semi-conductor substrate are sealed in a reaction vessel, the reaction gas comprises an oxide of the semi-conductor material and flows down the temperature gradient to the impurity source with which it reacts forming an oxide of the impurity; this oxide travels by a chemical transport reaction to the semi-conductor substrate with which it reacts depositing the impurity and reforming the semi-conductor oxide; the reaction vessel also has a condensation zone which, when activated precipitates the semi-conductor oxide to terminate or reduce its flow to the impurity source. As shown, Fig. 1, the reaction vessel comprises a sealed quartz tube 1 placed in a furnace 2 and heated by coils 3 to 6. The impurity source 7 comprises a quantity 9 of gallium disposed on a silicon support 9. The substrates 10 are of N-type silicon having P-type surface layers produced by a previous diffusion of aluminium. On heating the substrates, the silicon reacts with the silicon dioxide (quartz) of the tube 1 to form gaseous silicon monoxide which flows down the temperature gradient to source 7 where the silicon is deposited and a gaseous oxide of gallium is formed which travels to the substrates 10 with which it reacts depositing the gallium and reforming the silicon monoxide. Due to the elevated temperature the gallium diffuses into the substrates. Region 12 of the vessel forms a condensation zone so that when its temperature is reduced below that of source 7 the silicon monoxide generated at substrates 10 travels preferentially to region 12 where it is precipitated on the walls of tube 1 thereby reducing or terminating the transfer of gallium from source 7 to substrate 10. Depletion of the surfaces of the substrates is prevented by the presence of gallium vapour in the vessel. In an alternative arrangement, Fig. 2 (not shown), the condensation zone 12 is arranged between the source 7 and the substrates 10.
GB1054360D 1964-12-05 Active GB1054360A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0094470 1964-12-05

Publications (1)

Publication Number Publication Date
GB1054360A true GB1054360A (en)

Family

ID=7518715

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1054360D Active GB1054360A (en) 1964-12-05

Country Status (3)

Country Link
DE (1) DE1544255A1 (en)
FR (1) FR1455657A (en)
GB (1) GB1054360A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852129A (en) * 1972-04-05 1974-12-03 Philips Corp Method of carrying out diffusions with two sources
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852129A (en) * 1972-04-05 1974-12-03 Philips Corp Method of carrying out diffusions with two sources
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure

Also Published As

Publication number Publication date
DE1544255A1 (en) 1970-07-02
FR1455657A (en) 1966-04-01

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