GB1197649A - Improvements in or relating to Electroluminescent Junction Devices. - Google Patents
Improvements in or relating to Electroluminescent Junction Devices.Info
- Publication number
- GB1197649A GB1197649A GB11629/68A GB1162968A GB1197649A GB 1197649 A GB1197649 A GB 1197649A GB 11629/68 A GB11629/68 A GB 11629/68A GB 1162968 A GB1162968 A GB 1162968A GB 1197649 A GB1197649 A GB 1197649A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type region
- deep
- levels
- march
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H10P95/00—
Landscapes
- Led Devices (AREA)
Abstract
1,197,649. Electroluminescence. NATIONAL RESEARCH DEVELOPMENT CORP. 3 March, 1969 [9 March, 1968], No. 11629/68. Heading C4S. [Also in Division H1] In an electroluminescent diode including an abrupt PN junction, the P-type region is doped with deep level impurities so that tunneling of electrons can occur at a critical bias level directly from the conduction band in the N-type region to the deep levels in the P-type region. The radiative transition occurs between the deep levels and the shallow acceptor levels. The device, which may also exhibit a switching characteristic, is preferably made of GaP, the P-type region being formed as a zinc and oxygen doped epitaxial layer on an N-type substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB11629/68A GB1197649A (en) | 1968-03-09 | 1968-03-09 | Improvements in or relating to Electroluminescent Junction Devices. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB11629/68A GB1197649A (en) | 1968-03-09 | 1968-03-09 | Improvements in or relating to Electroluminescent Junction Devices. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1197649A true GB1197649A (en) | 1970-07-08 |
Family
ID=9989799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB11629/68A Expired GB1197649A (en) | 1968-03-09 | 1968-03-09 | Improvements in or relating to Electroluminescent Junction Devices. |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1197649A (en) |
-
1968
- 1968-03-09 GB GB11629/68A patent/GB1197649A/en not_active Expired
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |