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GB1167300A - Improvements in or relating to Luminescent Diodes - Google Patents

Improvements in or relating to Luminescent Diodes

Info

Publication number
GB1167300A
GB1167300A GB7765/69A GB776569A GB1167300A GB 1167300 A GB1167300 A GB 1167300A GB 7765/69 A GB7765/69 A GB 7765/69A GB 776569 A GB776569 A GB 776569A GB 1167300 A GB1167300 A GB 1167300A
Authority
GB
United Kingdom
Prior art keywords
carrier crystal
type
doped
type zone
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7765/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1167300A publication Critical patent/GB1167300A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Led Devices (AREA)

Abstract

1,167,300. Electroluminescence. SIEMENS A.G. 10 Jan., 1967 [13 Jan., 1966], No. 7765/69. Divided out of 1,156,903. Heading C4S. [Also in Division H1] An electroluminescent diode mounted on a carrier crystal of a III-V compound comprises a body of a III-V compound having an N-type zone adjacent to and a P-type zone remote from the carrier crystal, the N-type zone having a thickness of approximately one tenth of the absorption length of the radiation produced and being so lightly doped that no tunnel effect can occur. The device may be produced by epitaxially growing a thin lightly doped N-type layer of GaAs on a substrate and then forming a heavily doped P-type region by epitaxial growth, diffusion or alloying. The carrier crystal may be shaped to the form of a hemisphere with the PN junction at the centre of its plane surface. The carrier crystal material may differ from that of the epitaxial layer or may be optimally doped, as in Specification 1,156,903, to ensure that the band gap is high so that the absorption of the radiation is small.
GB7765/69A 1966-01-13 1967-01-10 Improvements in or relating to Luminescent Diodes Expired GB1167300A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES101425A DE1258515B (en) 1966-01-13 1966-01-13 AB luminescent diode with carrier crystal í¬ in particular based on GaAs í¬ with high light yield

Publications (1)

Publication Number Publication Date
GB1167300A true GB1167300A (en) 1969-10-15

Family

ID=7523747

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7765/69A Expired GB1167300A (en) 1966-01-13 1967-01-10 Improvements in or relating to Luminescent Diodes

Country Status (6)

Country Link
AT (1) AT266940B (en)
CH (1) CH472167A (en)
DE (1) DE1258515B (en)
GB (1) GB1167300A (en)
NL (1) NL6615970A (en)
SE (1) SE322840B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020225195A1 (en) * 2019-05-09 2020-11-12 Signify Holding B.V. Improved thermal management in laser-based lighting using a truncated ball lens

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1416993A (en) * 1963-12-12 1965-11-05 Gen Electric Improvements to semi-bending light sources
FR1416939A (en) * 1963-12-12 1965-11-05 Gen Electric Improvements in optical transmission processes of alloyed semiconductor light sources

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020225195A1 (en) * 2019-05-09 2020-11-12 Signify Holding B.V. Improved thermal management in laser-based lighting using a truncated ball lens

Also Published As

Publication number Publication date
DE1258515B (en) 1968-01-11
CH472167A (en) 1969-04-30
NL6615970A (en) 1967-07-14
AT266940B (en) 1968-12-10
SE322840B (en) 1970-04-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees