GB1179876A - Resistors for Integrated Circuits - Google Patents
Resistors for Integrated CircuitsInfo
- Publication number
- GB1179876A GB1179876A GB05100/67A GB1510067A GB1179876A GB 1179876 A GB1179876 A GB 1179876A GB 05100/67 A GB05100/67 A GB 05100/67A GB 1510067 A GB1510067 A GB 1510067A GB 1179876 A GB1179876 A GB 1179876A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- region
- layer
- integrated circuits
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical group BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
1,179,876. Resistors; integrated circuits. R. C. A. CORPORATION. 3 April, 1967 [13 April, 1966], No. 15100/67. Headings H1K and H1S. A resistor comprises a single crystal of semiconductor material, e.g. silicon, the surface layer of which is of one type conductivity, a first region 12<SP>1</SP> of opposite type conductivity and spaced contacts 18, and a second region 16 of said one type conductivity partially within the first region but extending only partially through the thickness of the first region. For use in integrated circuits, a crystal of silicon 2 is provided with N + and N type layers 4 and 6. P type impurity is diffused into the floating portion 8 of layer 6 to a depth of approximately 2.4 microns. Following this, another N+ type layer 16 is diffused into this P + type layer such that a narrow band 12<SP>1</SP> of the P+ type layer forms the effective resistance element between evaporated metal terminals 18. Examples described use boron from decomposition of boron tri-bromide for the P+ type layer and phosphorus from the decomposition of phosphorus oxy-chloride for the N + type layer. Transistors may be made simultaneously.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54231166A | 1966-04-13 | 1966-04-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1179876A true GB1179876A (en) | 1970-02-04 |
Family
ID=24163258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB05100/67A Expired GB1179876A (en) | 1966-04-13 | 1967-04-03 | Resistors for Integrated Circuits |
Country Status (7)
| Country | Link |
|---|---|
| BR (1) | BR6788425D0 (en) |
| DE (1) | DE1665476B2 (en) |
| ES (1) | ES339145A1 (en) |
| FR (1) | FR1534711A (en) |
| GB (1) | GB1179876A (en) |
| MY (1) | MY7300270A (en) |
| NL (1) | NL6705231A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4314226A (en) | 1979-02-02 | 1982-02-02 | Nissan Motor Company, Limited | Pressure sensor |
| EP0434318A3 (en) * | 1989-12-18 | 1992-08-26 | Honeywell Inc. | Low sheet resistance diffused contacts to buried diffused resistors using isolation regions and buried layer |
-
1967
- 1967-02-14 FR FR94825A patent/FR1534711A/en not_active Expired
- 1967-04-03 GB GB05100/67A patent/GB1179876A/en not_active Expired
- 1967-04-11 BR BR188425/67A patent/BR6788425D0/en unknown
- 1967-04-11 ES ES339145A patent/ES339145A1/en not_active Expired
- 1967-04-13 NL NL6705231A patent/NL6705231A/xx unknown
- 1967-04-13 DE DE1665476A patent/DE1665476B2/en not_active Withdrawn
-
1973
- 1973-12-31 MY MY1973270A patent/MY7300270A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4314226A (en) | 1979-02-02 | 1982-02-02 | Nissan Motor Company, Limited | Pressure sensor |
| EP0434318A3 (en) * | 1989-12-18 | 1992-08-26 | Honeywell Inc. | Low sheet resistance diffused contacts to buried diffused resistors using isolation regions and buried layer |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1665476B2 (en) | 1974-05-22 |
| BR6788425D0 (en) | 1973-05-17 |
| NL6705231A (en) | 1967-10-16 |
| FR1534711A (en) | 1968-08-02 |
| DE1665476A1 (en) | 1971-09-23 |
| ES339145A1 (en) | 1968-07-01 |
| MY7300270A (en) | 1973-12-31 |
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