GB1034824A - Semiconductor oscillation device - Google Patents
Semiconductor oscillation deviceInfo
- Publication number
- GB1034824A GB1034824A GB16874/63A GB1687463A GB1034824A GB 1034824 A GB1034824 A GB 1034824A GB 16874/63 A GB16874/63 A GB 16874/63A GB 1687463 A GB1687463 A GB 1687463A GB 1034824 A GB1034824 A GB 1034824A
- Authority
- GB
- United Kingdom
- Prior art keywords
- carrier injection
- voltage
- april
- semi
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910000967 As alloy Inorganic materials 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Landscapes
- Semiconductor Lasers (AREA)
Abstract
1,034,824. Semi-conductor devices. AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY, MINISTRY OF INTERNATIONAL TRADE & INDUSTRY. April 30, 1963 [April 30, 1962], No. 16874/63. Heading H1K. Electrical oscillations are generated by a semi-conductor device having a region in which its cross-sectional area changes abruptly, a unidrectional voltage being applied between the ends of the device and having means for injecting minority carriers into the device. As shown, Fig. 1A, a germanium crystal has a waist formed by machining or etching, an ohmic contact 2 and a minority carrier injection contact 2<SP>1</SP> such as a PN junction. When placed in series with a suitable voltage supply the device generates oscillations. Both end contacts may be ohmic and the carrier injection achieved by projecting light on to the device. The device may also have the configuration shown in Fig. 1B, and may have a rectangular, or circular cross-section. Two or more narrowed portions can also be provided. The oscillation can be modulated using a third terminal applied to the device, by modulating the light beam if this form of carrier injection is used, or by applying a magnetic field to the device. When the device is made of germanium a pulsed voltage is used to reduce heating. Continuous oscillation may be produced by using a constant voltage and cooling the device, mounting it under pressure, or using a gallium-arsenic alloy or cadmium sulphide crystal.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1683162 | 1962-04-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1034824A true GB1034824A (en) | 1966-07-06 |
Family
ID=11927122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB16874/63A Expired GB1034824A (en) | 1962-04-30 | 1963-04-30 | Semiconductor oscillation device |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1273010C2 (en) |
| GB (1) | GB1034824A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2033299A1 (en) * | 1969-02-06 | 1970-12-04 | United Aircraft Corp | |
| DE1766104B1 (en) * | 1967-07-05 | 1972-05-25 | Rca Corp | MICROWAVE OSCILLATOR WITH A SEMICONDUCTOR BODY |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1139161B (en) * | 1959-04-01 | 1962-11-08 | Akad Wissenschaften Ddr | Generator for generating undamped electrical oscillations by means of a crystal |
-
1963
- 1963-04-29 DE DE19631273010 patent/DE1273010C2/en not_active Expired
- 1963-04-30 GB GB16874/63A patent/GB1034824A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1766104B1 (en) * | 1967-07-05 | 1972-05-25 | Rca Corp | MICROWAVE OSCILLATOR WITH A SEMICONDUCTOR BODY |
| FR2033299A1 (en) * | 1969-02-06 | 1970-12-04 | United Aircraft Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1273010B (en) | 1973-12-13 |
| DE1273010C2 (en) | 1973-12-13 |
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