GB0019966D0 - A method of manufacturing an integrated circuit and an integrated circuit - Google Patents
A method of manufacturing an integrated circuit and an integrated circuitInfo
- Publication number
- GB0019966D0 GB0019966D0 GBGB0019966.1A GB0019966A GB0019966D0 GB 0019966 D0 GB0019966 D0 GB 0019966D0 GB 0019966 A GB0019966 A GB 0019966A GB 0019966 D0 GB0019966 D0 GB 0019966D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- manufacturing
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H10W20/071—
-
- H10P14/40—
-
- H10W20/074—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38528599A | 1999-08-30 | 1999-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0019966D0 true GB0019966D0 (en) | 2000-09-27 |
| GB2358285A GB2358285A (en) | 2001-07-18 |
Family
ID=23520781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0019966A Withdrawn GB2358285A (en) | 1999-08-30 | 2000-08-14 | Interlevel dielectrics |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2001102454A (en) |
| KR (1) | KR20010021456A (en) |
| GB (1) | GB2358285A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100703971B1 (en) * | 2005-06-08 | 2007-04-06 | 삼성전자주식회사 | Semiconductor integrated circuit device and manufacturing method thereof |
| JP6589277B2 (en) | 2015-01-14 | 2019-10-16 | 富士電機株式会社 | HIGH VOLTAGE PASSIVE DEVICE AND METHOD FOR MANUFACTURING HIGH VOLTAGE PASSIVE DEVICE |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3688726B2 (en) * | 1992-07-17 | 2005-08-31 | 株式会社東芝 | Manufacturing method of semiconductor device |
| US6114186A (en) * | 1996-07-30 | 2000-09-05 | Texas Instruments Incorporated | Hydrogen silsesquioxane thin films for low capacitance structures in integrated circuits |
| KR19980064176A (en) * | 1996-12-17 | 1998-10-07 | 윌리엄비.켐플러 | Integrated circuit dielectric |
| JP3226816B2 (en) * | 1996-12-25 | 2001-11-05 | キヤノン販売株式会社 | Method of forming interlayer insulating film, semiconductor device and method of manufacturing the same |
-
2000
- 2000-08-14 GB GB0019966A patent/GB2358285A/en not_active Withdrawn
- 2000-08-18 JP JP2000248123A patent/JP2001102454A/en active Pending
- 2000-08-29 KR KR1020000050372A patent/KR20010021456A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010021456A (en) | 2001-03-15 |
| GB2358285A (en) | 2001-07-18 |
| JP2001102454A (en) | 2001-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |