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FR3033079B1 - Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede - Google Patents

Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede Download PDF

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Publication number
FR3033079B1
FR3033079B1 FR1500320A FR1500320A FR3033079B1 FR 3033079 B1 FR3033079 B1 FR 3033079B1 FR 1500320 A FR1500320 A FR 1500320A FR 1500320 A FR1500320 A FR 1500320A FR 3033079 B1 FR3033079 B1 FR 3033079B1
Authority
FR
France
Prior art keywords
passivating
substrate
carrying
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1500320A
Other languages
English (en)
Other versions
FR3033079A1 (fr
Inventor
Frank Torregrosa
Yohann SPIEGEL
Laurent Roux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Beam Services SA
Original Assignee
Ion Beam Services SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1500320A priority Critical patent/FR3033079B1/fr
Application filed by Ion Beam Services SA filed Critical Ion Beam Services SA
Priority to KR1020177026308A priority patent/KR20170113675A/ko
Priority to PCT/FR2016/000027 priority patent/WO2016132029A1/fr
Priority to EP16711329.9A priority patent/EP3259773A1/fr
Priority to CN201680010888.4A priority patent/CN107408496A/zh
Priority to JP2017542141A priority patent/JP2018512725A/ja
Priority to US15/552,094 priority patent/US20180031319A1/en
Priority to TW105104749A priority patent/TWI651768B/zh
Publication of FR3033079A1 publication Critical patent/FR3033079A1/fr
Application granted granted Critical
Publication of FR3033079B1 publication Critical patent/FR3033079B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
    • F26B25/06—Chambers, containers, or receptacles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H10P14/6512—
    • H10P30/20—
    • H10P32/1204—
    • H10P72/0468—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
FR1500320A 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede Active FR3033079B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1500320A FR3033079B1 (fr) 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede
PCT/FR2016/000027 WO2016132029A1 (fr) 2015-02-19 2016-02-17 Procédé de stabilisation d'un substrat et machine pour la mise en oeuvre de ce procédé
EP16711329.9A EP3259773A1 (fr) 2015-02-19 2016-02-17 Procédé de stabilisation d'un substrat et machine pour la mise en oeuvre de ce procédé
CN201680010888.4A CN107408496A (zh) 2015-02-19 2016-02-17 衬底稳定化方法及实施这种方法的机器
KR1020177026308A KR20170113675A (ko) 2015-02-19 2016-02-17 기판을 안정화시키는 방법 및 이 방법을 수행하기 위한 장치
JP2017542141A JP2018512725A (ja) 2015-02-19 2016-02-17 基板安定化方法及び該方法を実施するための装置
US15/552,094 US20180031319A1 (en) 2015-02-19 2016-02-17 A method of stabilizing a substrate and a machine for performing the method
TW105104749A TWI651768B (zh) 2015-02-19 2016-02-18 使基材穩定化之方法以及執行該方法之機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1500320A FR3033079B1 (fr) 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede
FR1500320 2015-02-19

Publications (2)

Publication Number Publication Date
FR3033079A1 FR3033079A1 (fr) 2016-08-26
FR3033079B1 true FR3033079B1 (fr) 2018-04-27

Family

ID=53483872

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1500320A Active FR3033079B1 (fr) 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede

Country Status (8)

Country Link
US (1) US20180031319A1 (fr)
EP (1) EP3259773A1 (fr)
JP (1) JP2018512725A (fr)
KR (1) KR20170113675A (fr)
CN (1) CN107408496A (fr)
FR (1) FR3033079B1 (fr)
TW (1) TWI651768B (fr)
WO (1) WO2016132029A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7560054B2 (ja) * 2020-12-22 2024-10-02 青島海爾洗衣机有限公司 寝具乾燥装置
DE112022007533T5 (de) * 2022-09-16 2025-06-18 Hitachi Energy Ltd Verfahren zum herstellen eines halbleiterkörpers, halbleiterkörper und leistungshalbleitervorrichtung

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144100A (en) * 1977-12-02 1979-03-13 General Motors Corporation Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon
US4689667A (en) * 1985-06-11 1987-08-25 Fairchild Semiconductor Corporation Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms
GB2343550A (en) * 1997-07-29 2000-05-10 Silicon Genesis Corp Cluster tool method and apparatus using plasma immersion ion implantation
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
US6803297B2 (en) * 2002-09-20 2004-10-12 Applied Materials, Inc. Optimal spike anneal ambient
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7396746B2 (en) * 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
JP2006270000A (ja) * 2005-03-25 2006-10-05 Sumco Corp 歪Ｓｉ−ＳＯＩ基板の製造方法および該方法により製造された歪Ｓｉ−ＳＯＩ基板
TWI508142B (zh) * 2006-12-18 2015-11-11 應用材料股份有限公司 低能量、高劑量砷、磷與硼植入晶圓的安全處理
US7989329B2 (en) * 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
US7968440B2 (en) * 2008-03-19 2011-06-28 The Board Of Trustees Of The University Of Illinois Preparation of ultra-shallow semiconductor junctions using intermediate temperature ramp rates and solid interfaces for defect engineering
TW201027784A (en) * 2008-10-07 2010-07-16 Applied Materials Inc Advanced platform for processing crystalline silicon solar cells
WO2010051283A1 (fr) * 2008-10-31 2010-05-06 Applied Materials, Inc. Modification de profil de dopage dans un procédé p3i
FR2961010A1 (fr) * 2010-06-03 2011-12-09 Ion Beam Services Dispositif de mesure de dose pour l'implantation ionique en mode immersion plasma
CN102312210A (zh) * 2010-07-05 2012-01-11 中国科学院微电子研究所 一种等离子体浸没离子注入系统
KR101215649B1 (ko) * 2011-02-14 2012-12-26 에스케이하이닉스 주식회사 반도체 소자의 형성방법
US9085045B2 (en) * 2011-11-04 2015-07-21 Tokyo Electron Limited Method and system for controlling a spike anneal process
JP6050662B2 (ja) * 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
CN102891112B (zh) * 2012-10-25 2016-09-28 上海华虹宏力半导体制造有限公司 改善双栅cmos多晶硅耗尽的方法以及双栅cmos
CN103022046B (zh) * 2012-12-28 2019-01-15 无锡来燕微电子有限公司 一种具有p+单一多晶架构且与cmos工艺相兼容的非挥发性记忆体及其制备方法
US20160141492A1 (en) * 2013-07-31 2016-05-19 Hewlett-Packard Development Company, L.P. Memristor and methods for making the same

Also Published As

Publication number Publication date
JP2018512725A (ja) 2018-05-17
KR20170113675A (ko) 2017-10-12
WO2016132029A1 (fr) 2016-08-25
US20180031319A1 (en) 2018-02-01
TWI651768B (zh) 2019-02-21
CN107408496A (zh) 2017-11-28
TW201719727A (zh) 2017-06-01
EP3259773A1 (fr) 2017-12-27
FR3033079A1 (fr) 2016-08-26

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