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FR3098011B1 - Procede de fabrication de microfils ou nanofils - Google Patents

Procede de fabrication de microfils ou nanofils Download PDF

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Publication number
FR3098011B1
FR3098011B1 FR1907109A FR1907109A FR3098011B1 FR 3098011 B1 FR3098011 B1 FR 3098011B1 FR 1907109 A FR1907109 A FR 1907109A FR 1907109 A FR1907109 A FR 1907109A FR 3098011 B1 FR3098011 B1 FR 3098011B1
Authority
FR
France
Prior art keywords
manufacturing
iii
wire
microwire
nanowire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1907109A
Other languages
English (en)
Other versions
FR3098011A1 (fr
Inventor
Florian Dupont
Jérôme Napierala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1907109A priority Critical patent/FR3098011B1/fr
Application filed by Aledia filed Critical Aledia
Priority to KR1020217041943A priority patent/KR102793246B1/ko
Priority to CN202080047265.0A priority patent/CN114127891A/zh
Priority to JP2021577636A priority patent/JP7568300B2/ja
Priority to EP20734747.7A priority patent/EP3991199A1/fr
Priority to PCT/EP2020/068139 priority patent/WO2020260658A1/fr
Priority to US17/621,682 priority patent/US20220351971A1/en
Priority to TW109121826A priority patent/TWI856122B/zh
Publication of FR3098011A1 publication Critical patent/FR3098011A1/fr
Application granted granted Critical
Publication of FR3098011B1 publication Critical patent/FR3098011B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10P14/3462—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10P14/24—
    • H10P14/271—
    • H10P14/3202—
    • H10P14/3416—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PROCEDE DE FABRICATION DE MICROFILS OU NANOFILS La présente description concerne un procédé de fabrication d'un dispositif comprenant des fils (22) de taille micrométrique ou nanométrique comprenant un composé III-V, comprenant, pour chaque fil, la formation d'au moins une portion (24) du fil par une étape de d'épitaxie organométallique en phase vapeur comprenant l'injection dans un réacteur d'un premier gaz précurseur de l'élément du groupe V, d'un deuxième gaz précurseur de l'élément du groupe III et d'un troisième gaz précurseur d'un élément supplémentaire, dopant du composé III-V, en un gaz adapté pour obtenir une concentration de dopants supérieure à 5.1019 atomes/cm3 , par exemple supérieure à 1.1020 atomes/cm3, dans la portion du fil dans le cas où la portion a une concentration de dopants homogène. Figure pour l'abrégé : Fig. 3
FR1907109A 2019-06-28 2019-06-28 Procede de fabrication de microfils ou nanofils Active FR3098011B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1907109A FR3098011B1 (fr) 2019-06-28 2019-06-28 Procede de fabrication de microfils ou nanofils
CN202080047265.0A CN114127891A (zh) 2019-06-28 2020-06-26 用于生产微米线或纳米线的方法
JP2021577636A JP7568300B2 (ja) 2019-06-28 2020-06-26 マイクロワイヤ又はナノワイヤの製造方法
EP20734747.7A EP3991199A1 (fr) 2019-06-28 2020-06-26 Procede de fabrication de microfils ou nanofils
KR1020217041943A KR102793246B1 (ko) 2019-06-28 2020-06-26 마이크로와이어 또는 나노와이어의 제조 방법
PCT/EP2020/068139 WO2020260658A1 (fr) 2019-06-28 2020-06-26 Procede de fabrication de microfils ou nanofils
US17/621,682 US20220351971A1 (en) 2019-06-28 2020-06-26 Method for production of microwires or nanowires
TW109121826A TWI856122B (zh) 2019-06-28 2020-06-29 微米線或奈米線製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1907109 2019-06-28
FR1907109A FR3098011B1 (fr) 2019-06-28 2019-06-28 Procede de fabrication de microfils ou nanofils

Publications (2)

Publication Number Publication Date
FR3098011A1 FR3098011A1 (fr) 2021-01-01
FR3098011B1 true FR3098011B1 (fr) 2022-07-15

Family

ID=68138468

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1907109A Active FR3098011B1 (fr) 2019-06-28 2019-06-28 Procede de fabrication de microfils ou nanofils

Country Status (8)

Country Link
US (1) US20220351971A1 (fr)
EP (1) EP3991199A1 (fr)
JP (1) JP7568300B2 (fr)
KR (1) KR102793246B1 (fr)
CN (1) CN114127891A (fr)
FR (1) FR3098011B1 (fr)
TW (1) TWI856122B (fr)
WO (1) WO2020260658A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025109639A (ja) * 2024-01-14 2025-07-25 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943339B2 (ja) * 1979-01-12 1984-10-22 幹男 藁谷 自動車
EP2095426A4 (fr) * 2006-12-22 2012-10-10 Qunano Ab Structure nanoélectronique et procédé de production associé
US8895958B2 (en) 2009-12-01 2014-11-25 National University Corporation Hokkaido University Light emitting element and method for manufacturing same
FR2995729B1 (fr) 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
WO2017009395A1 (fr) * 2015-07-13 2017-01-19 Crayonano As Nanofils ou nanopyramides cultivés sur un substrat graphitique
US11594657B2 (en) * 2015-07-13 2023-02-28 Crayonano As Nanowires/nanopyramids shaped light emitting diodes and photodetectors
US10714337B2 (en) * 2015-07-31 2020-07-14 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
EP3145038A1 (fr) * 2015-09-15 2017-03-22 Technische Universität München Structure de laser à nanofil et son procédé de fabrication
GB201701829D0 (en) * 2017-02-03 2017-03-22 Norwegian Univ Of Science And Tech (Ntnu) Device
GB201705755D0 (en) * 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure

Also Published As

Publication number Publication date
TW202106609A (zh) 2021-02-16
KR20220025735A (ko) 2022-03-03
JP7568300B2 (ja) 2024-10-16
EP3991199A1 (fr) 2022-05-04
FR3098011A1 (fr) 2021-01-01
US20220351971A1 (en) 2022-11-03
KR102793246B1 (ko) 2025-04-07
TWI856122B (zh) 2024-09-21
CN114127891A (zh) 2022-03-01
WO2020260658A1 (fr) 2020-12-30
JP2022553591A (ja) 2022-12-26

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