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FR2959351B1 - Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium - Google Patents

Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium

Info

Publication number
FR2959351B1
FR2959351B1 FR1053154A FR1053154A FR2959351B1 FR 2959351 B1 FR2959351 B1 FR 2959351B1 FR 1053154 A FR1053154 A FR 1053154A FR 1053154 A FR1053154 A FR 1053154A FR 2959351 B1 FR2959351 B1 FR 2959351B1
Authority
FR
France
Prior art keywords
type
silicon
boron
layer
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1053154A
Other languages
English (en)
Other versions
FR2959351A1 (fr
Inventor
Barbara Bazer-Bachi
Mustapha Lemiti
Quang Nam Le
Yvon Pellegrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Synergies Pour Equipements Micro-Electronique Fr
Centre National de la Recherche Scientifique CNRS
Institut National des Sciences Appliquees de Lyon
EDF ENR PWT SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Photowatt International SA
Institut National des Sciences Appliquees de Lyon
SYNERGIES POUR EQUIPEMENTS MICRO ELECTRONIQUE COMMUNICATION OPTIQUE SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1053154A priority Critical patent/FR2959351B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Photowatt International SA, Institut National des Sciences Appliquees de Lyon, SYNERGIES POUR EQUIPEMENTS MICRO ELECTRONIQUE COMMUNICATION OPTIQUE SA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to KR1020127030885A priority patent/KR101777277B1/ko
Priority to DE112011101439T priority patent/DE112011101439T5/de
Priority to US13/643,641 priority patent/US9082924B2/en
Priority to CN201180021231.5A priority patent/CN102971867B/zh
Priority to PCT/FR2011/050948 priority patent/WO2011135249A1/fr
Priority to JP2013506715A priority patent/JP5940519B2/ja
Publication of FR2959351A1 publication Critical patent/FR2959351A1/fr
Application granted granted Critical
Publication of FR2959351B1 publication Critical patent/FR2959351B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H10P32/14—
    • H10P32/141—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)

Abstract

La présente invention concerne un procédé de préparation sur une plaque de silicium de structure de type n+pp+ ou de type p+nn+ qui comprend les étapes successives suivantes : a) Sur une plaque de silicium (1) de type p ou de type n qui comprend une face avant (8) et une face arrière (9), on forme par PECVD sur la face arrière (9) une couche d'oxyde de silicium dopée au bore (BSG) (2), puis une couche barrière à la diffusion de SiOx (3). b) On diffuse une source de phosphore de manière à ce que le phosphore et le bore co-diffusent et à former en outre : - sur la face avant (8) de la plaque obtenue à l'issue de l'étape a) : • une couche d'oxyde de silicium dopée au phosphore (PSG) (4), • une zone dopée n+ (5), - et sur la face arrière de la plaque obtenue à l'issue de l'étape a) : • une zone riche en bore (BRL) (6), ainsi qu' • une zone dopée p+ (7). c) On retire les couches d'oxydes BSG (2), PSG (4) et de SiOx (3), on oxyde la BRL (6) et on retire la couche résultante de cette oxydation. L'invention concerne aussi une plaque de silicium de structure de type n+pp+ ou de type p+nn+ susceptible d'être obtenue par ce procédé de préparation, ainsi qu'une cellule photovoltaïque fabriquée à partir d'une telle plaque de silicium.
FR1053154A 2010-04-26 2010-04-26 Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium Expired - Fee Related FR2959351B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1053154A FR2959351B1 (fr) 2010-04-26 2010-04-26 Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium
DE112011101439T DE112011101439T5 (de) 2010-04-26 2011-04-26 Verfahren zur Herstellung einer Struktur vom n+pp+-Typ oder p+nn+-Typ auf Siliciumwafern
US13/643,641 US9082924B2 (en) 2010-04-26 2011-04-26 Method for preparing an N+PP+ or P+NN+ structure on silicon wafers
CN201180021231.5A CN102971867B (zh) 2010-04-26 2011-04-26 在硅晶片上制备n+pp+型或p+nn+型结构的方法
KR1020127030885A KR101777277B1 (ko) 2010-04-26 2011-04-26 실리콘 웨이퍼들 상에 ｎ+ｐｐ+ 또는 ｐ+ｎｎ+ 구조를 준비하는 방법
PCT/FR2011/050948 WO2011135249A1 (fr) 2010-04-26 2011-04-26 Procédé de préparation d'une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium
JP2013506715A JP5940519B2 (ja) 2010-04-26 2011-04-26 シリコンウェハ上にｎ＋ｐｐ＋型又はｐ＋ｎｎ＋型の構造を作製する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1053154A FR2959351B1 (fr) 2010-04-26 2010-04-26 Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium

Publications (2)

Publication Number Publication Date
FR2959351A1 FR2959351A1 (fr) 2011-10-28
FR2959351B1 true FR2959351B1 (fr) 2013-11-08

Family

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Family Applications (1)

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FR1053154A Expired - Fee Related FR2959351B1 (fr) 2010-04-26 2010-04-26 Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium

Country Status (7)

Country Link
US (1) US9082924B2 (fr)
JP (1) JP5940519B2 (fr)
KR (1) KR101777277B1 (fr)
CN (1) CN102971867B (fr)
DE (1) DE112011101439T5 (fr)
FR (1) FR2959351B1 (fr)
WO (1) WO2011135249A1 (fr)

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CN103178152B (zh) * 2011-12-22 2015-09-16 茂迪股份有限公司 结晶硅太阳能电池的制造方法
JP2014045036A (ja) * 2012-08-24 2014-03-13 Amaya Corp 半導体装置の製造方法
KR101371801B1 (ko) 2013-01-11 2014-03-10 현대중공업 주식회사 양면수광형 태양전지의 제조방법
NL2010116C2 (en) * 2013-01-11 2014-07-15 Stichting Energie Method of providing a boron doped region in a substrate and a solar cell using such a substrate.
KR20150007394A (ko) * 2013-07-10 2015-01-21 현대중공업 주식회사 양면수광형 태양전지의 제조방법
JP6144778B2 (ja) * 2013-12-13 2017-06-07 信越化学工業株式会社 太陽電池の製造方法
WO2015186288A1 (fr) * 2014-06-02 2015-12-10 株式会社Sumco Tranche de silicium et son procédé de fabrication
DE102014109179B4 (de) 2014-07-01 2023-09-14 Universität Konstanz Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen
CN104538485A (zh) * 2014-11-06 2015-04-22 浙江正泰太阳能科技有限公司 一种双面电池的制备方法
CN105261670B (zh) * 2015-08-31 2017-06-16 湖南红太阳光电科技有限公司 晶体硅电池的低压扩散工艺
JP6509376B2 (ja) * 2015-12-21 2019-05-08 三菱電機株式会社 太陽電池の製造方法
CN105702809A (zh) * 2016-04-07 2016-06-22 南昌大学 一种低温气相沉积固态扩散源制备用于太阳电池的掺杂硅的方法
CN108110088B (zh) * 2017-12-21 2020-11-10 苏州阿特斯阳光电力科技有限公司 太阳能电池的低压扩散工艺及利用其制备得到的太阳能电池
CN109301031B (zh) * 2018-09-12 2021-08-31 江苏林洋光伏科技有限公司 N型双面电池的制作方法
CN111384210B (zh) * 2019-12-27 2021-10-22 横店集团东磁股份有限公司 一种perc叠加se的高开压扩散高方阻工艺
CN111755563B (zh) * 2020-05-26 2022-03-18 晶澳（扬州）太阳能科技有限公司 一种p型单晶硅硼背场双面电池及其制备方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法
CN112071950A (zh) * 2020-08-27 2020-12-11 江苏杰太光电技术有限公司 一种用pecvd设备制备钝化接触电池的方法
CN113363334A (zh) * 2021-06-01 2021-09-07 常州时创能源股份有限公司 一种硼掺杂选择性发射极的制备方法
CN113629172B (zh) * 2021-09-14 2023-03-14 常州时创能源股份有限公司 一种太阳能电池的硼扩散方法及其制造方法
CN115020539A (zh) * 2022-05-27 2022-09-06 天津爱旭太阳能科技有限公司 一种perc电池背面结构、制备工艺及perc电池
CN116314465A (zh) * 2023-03-23 2023-06-23 浙江求是半导体设备有限公司 一种发射极及其制备方法和应用

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Also Published As

Publication number Publication date
DE112011101439T5 (de) 2013-04-11
KR101777277B1 (ko) 2017-09-11
FR2959351A1 (fr) 2011-10-28
JP5940519B2 (ja) 2016-06-29
WO2011135249A1 (fr) 2011-11-03
US20130112260A1 (en) 2013-05-09
US9082924B2 (en) 2015-07-14
KR20130129818A (ko) 2013-11-29
JP2013526049A (ja) 2013-06-20
CN102971867B (zh) 2015-11-25
CN102971867A (zh) 2013-03-13

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