FR2879021B1 - Dispositif a semiconducteur de puissance - Google Patents

Dispositif a semiconducteur de puissance

Info

Publication number: FR2879021B1
Authority: FR; France
Prior art keywords: semiconductor device; power semiconductor; power; semiconductor
Prior art date: 2004-01-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

FR0413856A

Other languages

English (en)

Other versions

FR2879021A1 (fr

Inventor

Makoto Kondou

Kiyoshi Arai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Alstom Transport Technologies SAS

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-01-07

Filing date

2004-12-23

Publication date

2007-10-26

2004-12-23 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

2006-06-09 Publication of FR2879021A1 publication Critical patent/FR2879021A1/fr

2007-10-26 Application granted granted Critical

2007-10-26 Publication of FR2879021B1 publication Critical patent/FR2879021B1/fr

2024-12-23 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H10W90/00—
- H10W72/5445—
- H10W72/5449—
- H10W72/926—
- H10W90/753—

FR0413856A 2004-01-07 2004-12-23 Dispositif a semiconducteur de puissance Expired - Lifetime FR2879021B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2004001848A JP4491244B2 (ja)	2004-01-07	2004-01-07	電力半導体装置

Publications (2)

Publication Number	Publication Date
FR2879021A1 FR2879021A1 (fr)	2006-06-09
FR2879021B1 true FR2879021B1 (fr)	2007-10-26

Family

ID=34709021

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR0413856A Expired - Lifetime FR2879021B1 (fr)	2004-01-07	2004-12-23	Dispositif a semiconducteur de puissance

Country Status (5)

Country	Link
US (2)	US7535076B2 (fr)
JP (1)	JP4491244B2 (fr)
CN (1)	CN100435333C (fr)
DE (1)	DE102004060935B4 (fr)
FR (1)	FR2879021B1 (fr)

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* Cited by examiner, † Cited by third party
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JP4478049B2 (ja) *	2005-03-15	2010-06-09	三菱電機株式会社	半導体装置
JP5029078B2 (ja) *	2006-03-15	2012-09-19	株式会社日立製作所	電力用半導体装置
US7999369B2 (en)	2006-08-29	2011-08-16	Denso Corporation	Power electronic package having two substrates with multiple semiconductor chips and electronic components
US7557434B2 (en) *	2006-08-29	2009-07-07	Denso Corporation	Power electronic package having two substrates with multiple electronic components
DE102006040820B4 (de) *	2006-08-31	2009-07-02	Denso Corporation, Kariya	Elektrische Leistungspackung mit zwei Substraten mit mehreren elektronischen Komponenten
DE102006040838B4 (de) *	2006-08-31	2009-11-12	DENSO CORPORATION, Kariya-shi	Elektronische Leistungspackung mit zwei Substraten mit mehreren Halbleiterchips und elektronischen Komponenten
JP4919023B2 (ja) *	2006-11-07	2012-04-18	株式会社デンソー	パワー半導体モジュール実装構造
DE102007005233B4 (de)	2007-01-30	2021-09-16	Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.	Leistungsmodul
US7973387B2 (en) *	2007-06-08	2011-07-05	Continental Automotive Systems Us, Inc.	Insulated gate bipolar transistor
JP5241177B2 (ja) *	2007-09-05	2013-07-17	株式会社オクテック	半導体装置及び半導体装置の製造方法
JP5230213B2 (ja) *	2007-09-26	2013-07-10	ローム株式会社	半導体装置
KR101078743B1 (ko) *	2010-04-14	2011-11-02	주식회사 하이닉스반도체	스택 패키지
JP5447453B2 (ja)	2010-11-03	2014-03-19	株式会社デンソー	スイッチングモジュール
JP5525024B2 (ja) *	2012-10-29	2014-06-18	株式会社オクテック	半導体装置及び半導体装置の製造方法
JP6054345B2 (ja) *	2014-07-28	2016-12-27	株式会社オクテック	半導体装置及び半導体装置の製造方法
JP6956823B2 (ja) *	2015-05-08	2021-11-02	アジャイル・パワー・スイッチ・３・ディー−インテグレイション・エイ・ピー・エス・アイ・３・ディー	半導体パワーデバイスの組立て方法
CN107567657A (zh) *	2015-05-08	2018-01-09	敏捷电源开关三维集成Apsi3D	半导体功率器件以及组装半导体功率器件的方法
JP2020004784A (ja) *	2018-06-26	2020-01-09	三菱電機株式会社	パワーモジュールおよび電力変換装置
EP3588524B1 (fr)	2018-06-28	2020-08-05	Black & Decker Inc.	Module de commutateur électronique doté d'une diode de retour intégrée
JP7240221B2 (ja) *	2019-03-28	2023-03-15	日立Astemo株式会社	パワー半導体装置
DE112021000197B4 (de) *	2020-03-10	2023-07-06	Rohm Co., Ltd.	Halbleiterbauteil
EP4203010B1 (fr) *	2020-09-15	2025-07-30	Huawei Technologies Co., Ltd.	Module de puissance, convertisseur et dispositif électronique

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US4646129A (en) *	1983-09-06	1987-02-24	General Electric Company	Hermetic power chip packages
JPS6272147A (ja) *	1985-09-26	1987-04-02	Toshiba Corp	樹脂封止型半導体装置
JPH0278255A (ja) *	1988-09-14	1990-03-19	Hitachi Ltd	樹脂封止型半導体装置
US5559374A (en) *	1993-03-25	1996-09-24	Sanyo Electric Co., Ltd.	Hybrid integrated circuit
JPH06302734A (ja)	1993-04-14	1994-10-28	Sansha Electric Mfg Co Ltd	電力用半導体モジュール
JP2991010B2 (ja) *	1993-09-29	1999-12-20	富士電機株式会社	半導体装置およびその製造方法
JPH07273276A (ja) *	1994-03-28	1995-10-20	Nissan Motor Co Ltd	パワー素子とスナバ素子の接続構造及びその実装構造
DE4421319A1 (de) *	1994-06-17	1995-12-21	Abb Management Ag	Niederinduktives Leistungshalbleitermodul
JP3022178B2 (ja) *	1994-06-21	2000-03-15	日産自動車株式会社	パワーデバイスチップの実装構造
JP2581456B2 (ja) *	1994-06-27	1997-02-12	日本電気株式会社	部品の接続構造及びその製造方法
JPH09283887A (ja) *	1996-04-16	1997-10-31	Toshiba Corp	半導体装置及びこの装置に用いる金属絶縁基板
JP3879150B2 (ja) *	1996-08-12	2007-02-07	株式会社デンソー	半導体装置
KR100544033B1 (ko) *	1996-09-30	2006-01-23	지멘스 악티엔게젤샤프트	샌드위치 구조의 마이크로 전자 부품
US6144101A (en) *	1996-12-03	2000-11-07	Micron Technology, Inc.	Flip chip down-bond: method and apparatus
FR2759493B1 (fr) *	1997-02-12	2001-01-26	Motorola Semiconducteurs	Dispositif de puissance a semiconducteur
GB2334143A (en) *	1998-02-07	1999-08-11	Motorola Inc	An electronic device package
US6072240A (en) *	1998-10-16	2000-06-06	Denso Corporation	Semiconductor chip package
FR2785447B1 (fr)	1998-10-30	2000-12-15	Alstom Technology	Procede de raccordement electrique de puces de transistor igbt montees sur une plaquette de circuits integres
FR2785448B1 (fr)	1998-10-30	2001-01-26	Alstom Technology	Procede de fabrication d'une electrode de commande de grille pour transistor igbt
FR2786656B1 (fr)	1998-11-27	2001-01-26	Alstom Technology	Composant electronique de puissance comportant des moyens de refroidissement
FR2786655B1 (fr)	1998-11-27	2001-11-23	Alstom Technology	Dispositif electronique de puissance
US6306680B1 (en) *	1999-02-22	2001-10-23	General Electric Company	Power overlay chip scale packages for discrete power devices
US6703707B1 (en) *	1999-11-24	2004-03-09	Denso Corporation	Semiconductor device having radiation structure
US6864574B1 (en) *	1999-11-29	2005-03-08	Matsushita Electric Industrial Co., Ltd.	Semiconductor package
US6350954B1 (en) *	2000-01-24	2002-02-26	Motorola Inc.	Electronic device package, and method
JP2001291823A (ja) *	2000-04-05	2001-10-19	Toshiba Digital Media Engineering Corp	半導体装置
JP2002016215A (ja) *	2000-06-30	2002-01-18	Toshiba Corp	半導体装置モジュール
FR2811475B1 (fr) *	2000-07-07	2002-08-23	Alstom	Procede de fabrication d'un composant electronique de puissance, et composant electronique de puissance ainsi obtenu
JP4085563B2 (ja) *	2000-08-24	2008-05-14	富士電機ホールディングス株式会社	パワー半導体モジュールの製造方法
FR2814907A1 (fr) *	2000-10-03	2002-04-05	Alstom	Module electronique de puissance et bras d'onduleur comportant un tel module
EP1209742A1 (fr) *	2000-11-22	2002-05-29	ABB Schweiz AG	Module semi-conductrice à haut prestation et utilisation de la meme
JP3923258B2 (ja) *	2001-01-17	2007-05-30	松下電器産業株式会社	電力制御系電子回路装置及びその製造方法
JP2003243608A (ja) *	2002-02-15	2003-08-29	Mitsubishi Electric Corp	電力用モジュール
DE10258565B3 (de) *	2002-12-14	2004-08-12	Semikron Elektronik Gmbh	Schaltungsanordnung für Halbleiterbauelemente und Verfahren zur Herstellung

2004
- 2004-01-07 JP JP2004001848A patent/JP4491244B2/ja not_active Expired - Lifetime
- 2004-12-17 DE DE200410060935 patent/DE102004060935B4/de not_active Expired - Lifetime
- 2004-12-23 FR FR0413856A patent/FR2879021B1/fr not_active Expired - Lifetime
2005
- 2005-01-06 US US11/029,379 patent/US7535076B2/en not_active Expired - Lifetime
- 2005-01-06 CN CNB2005100037238A patent/CN100435333C/zh not_active Expired - Lifetime
2009
- 2009-04-21 US US12/427,151 patent/US7859079B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
FR2879021A1 (fr)	2006-06-09
US7859079B2 (en)	2010-12-28
US7535076B2 (en)	2009-05-19
CN1638119A (zh)	2005-07-13
JP2005197435A (ja)	2005-07-21
CN100435333C (zh)	2008-11-19
US20050146027A1 (en)	2005-07-07
US20090250781A1 (en)	2009-10-08
JP4491244B2 (ja)	2010-06-30
DE102004060935B4 (de)	2014-12-24
DE102004060935A1 (de)	2005-08-04

Publication	Publication Date	Title
FR2842352B1 (fr)	2006-03-03	Dispositif a semiconducteur de puissance
FR2879021B1 (fr)	2007-10-26	Dispositif a semiconducteur de puissance
FR2876760B1 (fr)	2009-11-27	Dispositif de transmission de puissance
EP1810334A4 (fr)	2009-06-10	Dispositif a semi-conducteur
EP1829102A4 (fr)	2014-08-13	Dispositif a semiconducteur
EP1667241A4 (fr)	2011-11-23	Dispositif a semi-conducteurs
EP1605523A4 (fr)	2012-04-04	Dispositif a semi-conducteurs
DE602004032509D1 (de)	2011-06-16	Photovoltaisches Bauelement
DE60321067D1 (de)	2008-07-03	Energiequelle-Gerät
EP1760790A4 (fr)	2008-06-04	Dispositif semi-conducteur
EP1710831A4 (fr)	2008-07-23	Dispositif semi-conducteur
EP1809875A4 (fr)	2012-01-18	Dispositif de generation de puissance de petit format
DE60324383D1 (de)	2008-12-11	Seilpositionierungsvorrichtung
EP2087581A4 (fr)	2013-05-15	Dispositif de conversion de puissance
EP1708284A4 (fr)	2012-10-03	Dispositif electroluminescent a semi-conducteur
EP1755165A4 (fr)	2010-11-03	Dispositif semi-conducteur
DE10362232B8 (de)	2011-11-10	Leistungshalbleitervorrichtung
FR2870667B1 (fr)	2010-09-17	Dispositif de conversion de puissance
EP2149474A4 (fr)	2010-05-26	Dispositif de puissance
EP1617475A4 (fr)	2008-05-14	Dispositif semi-conducteur
DE602004014551D1 (de)	2008-08-07	Energieerzeugungsvorrichtung
EP2101409A4 (fr)	2012-11-28	Dispositif d'amplification de puissance
EP1953824A4 (fr)	2011-11-23	Dispositif a semi-conducteur
EP1801871A4 (fr)	2011-01-12	Dispositif semi-conducteur
EP1972819A4 (fr)	2010-05-12	Dispositif de transmission de puissance

Legal Events

Date	Code	Title	Description
2007-11-09	TQ	Partial transmission of property
2015-11-10	PLFP	Fee payment	Year of fee payment: 12
2016-11-11	PLFP	Fee payment	Year of fee payment: 13
2017-09-29	TQ	Partial transmission of property	Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JP Effective date: 20170824 Owner name: ALSTOM TRANSPORT TECHNOLOGIES, FR Effective date: 20170824
2017-11-13	PLFP	Fee payment	Year of fee payment: 14
2018-11-20	PLFP	Fee payment	Year of fee payment: 15
2019-11-15	PLFP	Fee payment	Year of fee payment: 16
2020-11-12	PLFP	Fee payment	Year of fee payment: 17
2021-11-15	PLFP	Fee payment	Year of fee payment: 18
2022-11-10	PLFP	Fee payment	Year of fee payment: 19
2023-11-08	PLFP	Fee payment	Year of fee payment: 20