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FR2538621B1 - Dispositif a semi-conducteurs comportant un capteur de pression et procede de fabrication d'un tel dispositif - Google Patents

Dispositif a semi-conducteurs comportant un capteur de pression et procede de fabrication d'un tel dispositif

Info

Publication number
FR2538621B1
FR2538621B1 FR8320663A FR8320663A FR2538621B1 FR 2538621 B1 FR2538621 B1 FR 2538621B1 FR 8320663 A FR8320663 A FR 8320663A FR 8320663 A FR8320663 A FR 8320663A FR 2538621 B1 FR2538621 B1 FR 2538621B1
Authority
FR
France
Prior art keywords
manufacturing
pressure sensor
semiconductor device
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8320663A
Other languages
English (en)
Other versions
FR2538621A1 (fr
Inventor
Isao Shimizu
Kazuji Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2538621A1 publication Critical patent/FR2538621A1/fr
Application granted granted Critical
Publication of FR2538621B1 publication Critical patent/FR2538621B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
FR8320663A 1982-12-24 1983-12-23 Dispositif a semi-conducteurs comportant un capteur de pression et procede de fabrication d'un tel dispositif Expired FR2538621B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226274A JPS59117271A (ja) 1982-12-24 1982-12-24 圧力感知素子を有する半導体装置とその製造法

Publications (2)

Publication Number Publication Date
FR2538621A1 FR2538621A1 (fr) 1984-06-29
FR2538621B1 true FR2538621B1 (fr) 1986-10-17

Family

ID=16842635

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8320663A Expired FR2538621B1 (fr) 1982-12-24 1983-12-23 Dispositif a semi-conducteurs comportant un capteur de pression et procede de fabrication d'un tel dispositif

Country Status (9)

Country Link
US (1) US4618397A (fr)
JP (1) JPS59117271A (fr)
KR (1) KR840007315A (fr)
DE (1) DE3345988A1 (fr)
FR (1) FR2538621B1 (fr)
GB (1) GB2135509B (fr)
HK (1) HK788A (fr)
IT (1) IT1170061B (fr)
SG (1) SG88587G (fr)

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JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
GB8426915D0 (en) * 1984-10-24 1984-11-28 Marconi Instruments Ltd Fabricating devices on semiconductor substrates
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US4793194A (en) * 1985-03-26 1988-12-27 Endevco Corporation Piezoresistive transducer
US4766666A (en) * 1985-09-30 1988-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor and method of manufacturing the same
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US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
US5207103A (en) * 1987-06-01 1993-05-04 Wise Kensall D Ultraminiature single-crystal sensor with movable member
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
US4756193A (en) * 1987-09-11 1988-07-12 Delco Electronics Corporation Pressure sensor
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JP2918299B2 (ja) * 1990-06-25 1999-07-12 沖電気工業株式会社 半導体圧力センサおよびそれを有する半導体装置の製造方法
US5231301A (en) * 1991-10-02 1993-07-27 Lucas Novasensor Semiconductor sensor with piezoresistors and improved electrostatic structures
JPH05190872A (ja) * 1992-01-16 1993-07-30 Oki Electric Ind Co Ltd 半導体圧力センサおよびその製造方法
US5293516A (en) * 1992-01-28 1994-03-08 International Business Machines Corporation Multiprobe apparatus
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
JP2940293B2 (ja) * 1992-03-31 1999-08-25 日産自動車株式会社 半導体加速度センサの製造方法
US6714625B1 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
US5397897A (en) * 1992-04-17 1995-03-14 Terumo Kabushiki Kaisha Infrared sensor and method for production thereof
DE4309207C2 (de) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Halbleitervorrichtung mit einem piezoresistiven Drucksensor
US5484745A (en) * 1993-10-26 1996-01-16 Yazaki Meter Co., Ltd. Method for forming a semiconductor sensor
US5949118A (en) * 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
DE69512544T2 (de) * 1994-03-18 2000-05-25 The Foxboro Co., Foxboro Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu
JPH08236784A (ja) * 1995-02-23 1996-09-13 Tokai Rika Co Ltd 加速度センサ及びその製造方法
US5804462A (en) * 1995-11-30 1998-09-08 Motorola, Inc. Method for forming a multiple-sensor semiconductor chip
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6284670B1 (en) 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
US6022756A (en) * 1998-07-31 2000-02-08 Delco Electronics Corp. Metal diaphragm sensor with polysilicon sensing elements and methods therefor
US6225140B1 (en) * 1998-10-13 2001-05-01 Institute Of Microelectronics CMOS compatable surface machined pressure sensor and method of fabricating the same
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
JP3567094B2 (ja) * 1999-02-09 2004-09-15 株式会社日立製作所 回路内蔵型センサおよびそれを用いた圧力検出装置
JP2002131161A (ja) * 2000-10-27 2002-05-09 Denso Corp 半導体圧力センサ
US6622558B2 (en) 2000-11-30 2003-09-23 Orbital Research Inc. Method and sensor for detecting strain using shape memory alloys
US6748994B2 (en) 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
JP2002340713A (ja) * 2001-05-10 2002-11-27 Denso Corp 半導体圧力センサ
US7402897B2 (en) 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US7884432B2 (en) * 2005-03-22 2011-02-08 Ametek, Inc. Apparatus and methods for shielding integrated circuitry
DE102005046058A1 (de) * 2005-09-27 2007-03-29 Robert Bosch Gmbh Verfahren zur Herstellung einer eine monolithisch integrierte Schaltung unfassende Sensoranordnung und Sensoranordnung
US20070238215A1 (en) * 2006-04-07 2007-10-11 Honeywell International Inc. Pressure transducer with increased sensitivity
US7343812B2 (en) * 2006-06-15 2008-03-18 Honeywell International Inc. Method to reduce die edge shorting on pressure sensors using conductive elastomeric seals
JP5110885B2 (ja) * 2007-01-19 2012-12-26 キヤノン株式会社 複数の導電性の領域を有する構造体
US7934430B2 (en) * 2007-11-01 2011-05-03 Fairchild Semiconductor Corporation Die scale strain gauge
FR2946775A1 (fr) 2009-06-15 2010-12-17 St Microelectronics Rousset Dispositif de detection d'amincissement du substrat d'une puce de circuit integre
CN102023065B (zh) * 2009-09-11 2016-04-13 北京京东方光电科技有限公司 用于检测液晶面板生产中毛刷压入量的接触力测量基板
US8656772B2 (en) 2010-03-22 2014-02-25 Honeywell International Inc. Flow sensor with pressure output signal
US8616065B2 (en) 2010-11-24 2013-12-31 Honeywell International Inc. Pressure sensor
US8695417B2 (en) 2011-01-31 2014-04-15 Honeywell International Inc. Flow sensor with enhanced flow range capability
US8558330B2 (en) * 2011-10-31 2013-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Deep well process for MEMS pressure sensor
US9003897B2 (en) 2012-05-10 2015-04-14 Honeywell International Inc. Temperature compensated force sensor
US9052217B2 (en) 2012-11-09 2015-06-09 Honeywell International Inc. Variable scale sensor
JP6101141B2 (ja) * 2013-04-18 2017-03-22 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
WO2017170748A1 (fr) * 2016-03-31 2017-10-05 京セラ株式会社 Capteur de contrainte
US10352792B2 (en) * 2017-02-15 2019-07-16 Texas Instruments Incorporated Device and method for on-chip mechanical stress sensing

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Also Published As

Publication number Publication date
IT8324374A0 (it) 1983-12-23
GB8334221D0 (en) 1984-02-01
US4618397A (en) 1986-10-21
JPS59117271A (ja) 1984-07-06
KR840007315A (ko) 1984-12-06
GB2135509B (en) 1986-10-08
GB2135509A (en) 1984-08-30
DE3345988A1 (de) 1984-06-28
IT1170061B (it) 1987-06-03
HK788A (en) 1988-01-15
FR2538621A1 (fr) 1984-06-29
SG88587G (en) 1988-06-03

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Legal Events

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