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FR2111761A1 - - Google Patents

Info

Publication number
FR2111761A1
FR2111761A1 FR7137436A FR7137436A FR2111761A1 FR 2111761 A1 FR2111761 A1 FR 2111761A1 FR 7137436 A FR7137436 A FR 7137436A FR 7137436 A FR7137436 A FR 7137436A FR 2111761 A1 FR2111761 A1 FR 2111761A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7137436A
Other languages
French (fr)
Other versions
FR2111761B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2111761A1 publication Critical patent/FR2111761A1/fr
Application granted granted Critical
Publication of FR2111761B1 publication Critical patent/FR2111761B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617Combinations of vertical BJTs and only diodes
    • H10P95/00
FR7137436A 1970-10-22 1971-10-19 Expired FR2111761B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702051929 DE2051929A1 (en) 1970-10-22 1970-10-22 Semiconductor component

Publications (2)

Publication Number Publication Date
FR2111761A1 true FR2111761A1 (en) 1972-06-09
FR2111761B1 FR2111761B1 (en) 1977-03-18

Family

ID=5785888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7137436A Expired FR2111761B1 (en) 1970-10-22 1971-10-19

Country Status (4)

Country Link
DE (1) DE2051929A1 (en)
FR (1) FR2111761B1 (en)
GB (1) GB1311839A (en)
NL (1) NL7113853A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017021A1 (en) * 1979-03-30 1980-10-15 International Business Machines Corporation Method of making a semiconductor device including complementary transistors

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412376A (en) 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
USD343699S (en) 1991-06-27 1994-01-25 Yang Kuo Y W Lipstick applicator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017021A1 (en) * 1979-03-30 1980-10-15 International Business Machines Corporation Method of making a semiconductor device including complementary transistors

Also Published As

Publication number Publication date
GB1311839A (en) 1973-03-28
FR2111761B1 (en) 1977-03-18
DE2051929A1 (en) 1972-05-25
NL7113853A (en) 1972-04-25

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Legal Events

Date Code Title Description
ST Notification of lapse