DE2051929A1 - Semiconductor component - Google Patents

Description

The invention relates to a semiconductor component with the electrical Effects of a transistor.

E3 is known to be semiconductor components integrated into Circuits can be used to manufacture with the help of planar technology, where a semiconductor layer is placed on a substrate deposited epitaxially. Various areas are created in this layer with the help of the usual masking technique different conductivity type diffused. Suitable areas that have diffused in form, for example, bipolar ones npn or pnp transistors or pn diodes. It is also also known, in an epitaxial layer, components without a pn junction, such as field effect transistors or metal-semiconductor diodes to arrange.

Components with the properties of a transistor are based either on the effects of two connected in series pn junctions or, like field effect transistors, on the control of the conductivity of a channel through one of the channel Electrode separated by an insulating layer to which an electrical voltage is applied.

The aim of the present invention is to provide a novel component which has the effects of a transistor and deyfion manufacture with the process steps in manufacture integrated circuits in planar technology are fully compatible is. This novel component should in particular

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have fewer diffused pn junctions than a normal one. Transistor and have favorable electrical properties, such as a short switching time _r .

This object is achieved according to the invention in that at least one of the two pn transistors forming a bipolar transistor is replaced by a metal semiconductor contact.

This new type of component has, compared to known components, wj, e, for example, lateral pnp transistors, cheap electrical properties on: it possesses a low Threshold voltage, a low optimum voltage and shorter switching Bk times. It can be means of integrated in the manufacture of Circuits can be produced simply and efficiently using conventional methods.

A further development of the invention is that as a metal-semiconductor contact a metal silicide caliper contact is provided is.

Further features and details of the E: pi ^ dung result from the following Beschr.eibpmg of an embodiment based on the figure, in de _? a diffUd ^ er ^ er if.r, ansis | or, un ^ the new construction element are shown in two different variants in the Sqhnitt.

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An n-doped epitaxial layer 2 is seen on a weakly p-doped substrate 1. The substrate ] consists of monocrystalline silicon and has a specific resistance of § SL cm. The layer thickness of the epitaxial layer 2 is 5 μm, its specific resistance 0.8 IL cm. _{Highly doped η-conductive zones 3 r} 4 are provided between the epitaxial slide 2 and the substrate 1. The zones 3, 4i, which are usually referred to as buried layers, form low ohmic paths for reduction at the desired locations

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of rail resistances. The zones 3, 4- can with arsenic, antimony or be doped with phosphorus. From the surface 5 of the epitaxial ■ see layer 2, heavily p-doped insulation walls 6, 7 are sufficient, 8, 9 "to the substrate 1. The insulation walls 6, 7, 8, 9 border n-conductive wells of the epitaxial layer 2 from each other away. Heavily η-doped areas 10, 11 are from the surface 5 a low-resistance electrical connection to the zones 3, 4 ago.

A p-conducting area 13 is provided in the trough which is divided off by the insulation walls 6, 7, and in this area a highly η-conducting area 14 is in turn provided. Area 14 forms the emitter and area 13 forms the base of an npn transistor. \ Area 10 establishes a low-resistance collector connection.

The surface 5 of the epitaxial layer 2 is through with the exception of contact holes 20, 21, 22, 23, 24, 25, 26, 27, 28 an insulating layer 16 made of silicon dioxide is covered. In the contact hole 20 contact metal 30 is provided as an electrical connection for the area 13 acting as a base, while contact rivet 31 in the contact hole 21 forms the outer emitter connection of the diffused npn transistor. As an external collector connection is used in the contact hole 22 contact metal 32.

The tub of the epi- ^ separated by the isolation walls 7 »8 tactical layer 2 is provided with the contact holes 23, 24, 25. Contact metal 35 forms in contact hole 25 an ohiaschen connection of area 11. That in the contact holes 23, 24 provided contact metal 33, 34 forms with the surface 5 of the epitaxial layer 2 metal-semiconductor contacts 43, 44.

In the contact hole 28, the contact metal 38 represents an outer ohmic one Connection of the insulation wall 9 represents. The through the Isolation3v / änd 8, 9 formed insulation well of the epitaxial

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Layer 2 is provided with the contact holes 26, 27. In this case, under the contact hole 27 in this trough there is a strongly n-type conductor Area 15 provided. The contact metal 37 in the contact hole 27 represents an ohmic connection of the area 15. Finally, the contact metal 36 forms in the contact hole 26 with the surface 5 of the epitaxial layer 2 has a metal-semiconductor contact 46,

The contact metal must be chosen so that ohmic contacts to the insulation wall 9 and the areas 10, 11, 13, 14, 15 are guaranteed, and that metal-semiconductor contacts in the Contact holes 23, 24, 26 to the weakly ή-doped epitaxial Layer 2 are formed. These demands are made, for example, by aluminum, titanium, platinum, palladium, rhodium, Ko'balt, or their silicides, fulfilled, so that as a contact metal 30 to 38 of these metals can be used.

The contact metal 33 in the contact hole 23 forms the emitter and the contact metal 34 in .Kontaktloch 24 the collector of the novel Component. The pn junctions of a normal transistor are thereby formed by the metal half-liter contacts 43, 44 replaced. The width of this component acting as a transistor is determined by the distance between the contact holes 23 and 24. Contact 35 is the base connection of the Component. . ■., .. ■ ·. ,

In the case of the new type provided between the insulation walls 8, 9 A component that also shows the electrical effects of a transistor is just a metal-semiconductor contact 46 provided. The contact metal] 36 forms the emitter in the contact hole 26, while the collector connection through the ' Contact metal 38 in the contact hole 28 to the insulation wall 9 er. follows. Finally, the contact metal 37 in the contact hole 27 represents the base connection of this component, which does not buried layer, and which can be used as a substrate transistor. '<

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Finally, a method for producing the arrangement shown in the figure will be explained in more detail.

In the weakly p-doped monocrystalline substrate 1 made of silicon the highly doped η-conductive zones 3, 4 as low-resistance paths are diffused in at the desired points to reduce the rail resistances. Then the n-doped epitaxial layer 2 deposited. Through to the substrate 1 deeply driven insulation diffusions, the insulation walls 6, 7, 8, 9 are made. A heavily η-doped contact diffusion produces the areas 10, 11 which effect the low-resistance electrical connection of the zones 3, 4. Then { the highly doped η-conductive region 15 is diffused in. It is irrelevant for the proposed novel component, whether previously the diffusion for other components, such as the diffusion for an integrated circuit Production of the area 13 and, at the same time as the diffusion of the area 15, the diffusion of the area 14 is carried out will.

Finally, in the insulator layer 16, the contact holes for the connections of the usual integrated components and at the same time the contact holes 23, 24, 26 are exposed. Then the appropriately chosen metal, e.g. platinum, Titanium, palladium, rhodium, cobalt or aluminum by vacuum "vapor deposition or cathode sputtering or similar processes applied, the contacts and conductive paths are structure-etched using the usual methods and, if necessary, a temperature treatment (Sintering).

7 claims
1 figure

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Claims (7)

Claims / Semiconductor component with the electrical effects of a Transistor, characterized in, that at least one of the two pn junctions forming a bipolar transistor is replaced by a metal-semiconductor contact. 2. Semiconductor component according to claim 1, characterized characterized in that as a metal-semiconductor contact a metal silicide semiconductor contact is provided <. 3. Semiconductor component according to claim 1 and / or 2, characterized in that on one an epitaxial layer of the other conductivity type arranged on a substrate of one conductivity type as an emitter effective metal-semiconductor contact or metal silicide-semiconductor contact is provided. 4. Semiconductor component according to claims 1 and 3, characterized in that mehen the metal-semiconductor contact acting as an emitter is preceded by a further metal-semiconductor contact acting as a collector. ^ is seen. 5. A semiconductor component according to claim 1 unü / ού ^ τ 2 _9, characterized in that a metal-semiconductor contact acting as a collector is provided on an epitaxial layer of the other conduction type arranged on a substrate of one conduction type. 6. Semiconductor component according to at least one of the claims 1 to 3, d a d τι r c h marked, that the base connection is an ohmic contact on the epitaxial VPA 9 / I10 / 0074 - 7 - 209822/0751 Already a layer and an ohmic contact as a collector connection on a region of the one conductivity type which extends from the surface of the epitaxial layer through the epitaxial Layer extends to the substrate, are provided. 7. Semiconductor component according to one of claims 1 to 6,
through this. marked that as
Contact metal aluminum, titanium, platinum, rhodium, palladium, cobalt or their silicides are provided. YFA 9/110/0074 209822/0751 Blank page