FR2011079A1 - - Google Patents

Info

Publication number: FR2011079A1
Authority: FR; France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

FR6919976A

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1968-06-17

Filing date

1969-06-16

Publication date

1970-02-27

1968-06-17 Priority claimed from JP43041769A external-priority patent/JPS5142472B1/ja

1968-12-28 Priority claimed from JP92569A external-priority patent/JPS51839B1/ja

1969-06-16 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1970-02-27 Publication of FR2011079A1 publication Critical patent/FR2011079A1/fr

Status Pending legal-status Critical Current

Classifications

- H10P14/6324—
- H10P14/665—
- H10P14/69391—
- H10P14/69392—
- H10P14/69393—
- H10P14/69394—
- H10W20/071—
- H10W20/077—
- H10W20/40—
- H10W20/435—
- H10W74/43—
- H10P14/6314—
- H10W20/072—
- H10W20/092—

FR6919976A 1968-06-17 1969-06-16 Pending FR2011079A1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP43041769A JPS5142472B1 (fr)	1968-06-17	1968-06-17
JP92569A JPS51839B1 (fr)	1968-12-28	1968-12-28

Publications (1)

Publication Number	Publication Date
FR2011079A1 true FR2011079A1 (fr)	1970-02-27

Family

ID=26334042

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR6919976A Pending FR2011079A1 (fr)	1968-06-17	1969-06-16

Country Status (6)

Country	Link
US (1)	US3988214A (fr)
DE (2)	DE1930669C2 (fr)
FR (1)	FR2011079A1 (fr)
GB (1)	GB1276745A (fr)
MY (1)	MY7500214A (fr)
NL (1)	NL161617C (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2096565A1 (fr) *	1970-06-29	1972-02-18	Western Electric Co
FR2384355A1 (fr) *	1977-03-16	1978-10-13	Philips Nv	Dispositif semi-conducteur et son procede de fabrication
EP0129476A3 (en) *	1983-06-16	1986-12-30	Digital Equipment Corporation	Pattern recessed by anisotropic reactive ion etching and dense multilayer metallization integrated circuits produced thereby

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3437863B2 (ja) *	1993-01-18	2003-08-18	株式会社半導体エネルギー研究所	Ｍｉｓ型半導体装置の作製方法
FR2074675A1 (en) *	1970-01-16	1971-10-08	Semi Conducteurs	Mos transistors prodn - with improved resistance to cosmic radiation
JPS5347669B1 (fr) *	1971-01-14	1978-12-22
JPS5347946Y2 (fr) *	1974-08-13	1978-11-16
US4005452A (en) *	1974-11-15	1977-01-25	International Telephone And Telegraph Corporation	Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
JPS588588B2 (ja) *	1975-05-28	1983-02-16	株式会社日立製作所	半導体集積回路
JPS5851425B2 (ja) *	1975-08-22	1983-11-16	株式会社日立製作所	ハンドウタイソウチ
DE2642471A1 (de) *	1976-09-21	1978-03-23	Siemens Ag	Verfahren zur herstellung von mehrlagenverdrahtungen bei integrierten halbleiterschaltkreisen
JPS5351985A (en) *	1976-10-22	1978-05-11	Hitachi Ltd	Semiconductor wiring constitution
US4278737A (en)	1978-08-04	1981-07-14	United States Borax & Chemical Corporation	Anodizing aluminum
TW297142B (fr)	1993-09-20	1997-02-01	Handotai Energy Kenkyusho Kk
US5580825A (en) *	1993-09-20	1996-12-03	International Technology Exchange Corp.	Process for making multilevel interconnections of electronic components
US6777763B1 (en) *	1993-10-01	2004-08-17	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for fabricating the same
JP3030368B2 (ja)	1993-10-01	2000-04-10	株式会社半導体エネルギー研究所	半導体装置およびその作製方法
US6747627B1 (en)	1994-04-22	2004-06-08	Semiconductor Energy Laboratory Co., Ltd.	Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
JP3402400B2 (ja)	1994-04-22	2003-05-06	株式会社半導体エネルギー研究所	半導体集積回路の作製方法
EP1335422B1 (fr) *	1995-03-24	2013-01-16	Shinko Electric Industries Co., Ltd.	Procédé de fabrication d'un dispositif semi-conducteur à dimensions de puce
US6370502B1 (en) *	1999-05-27	2002-04-09	America Online, Inc.	Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
US6586325B2 (en) *	2001-06-26	2003-07-01	Cosmos Vacuum Technology Corporation	Process for making an electronic device having a multilevel structure
US20040061232A1 (en) *	2002-09-27	2004-04-01	Medtronic Minimed, Inc.	Multilayer substrate
US8003513B2 (en) *	2002-09-27	2011-08-23	Medtronic Minimed, Inc.	Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures
US8563336B2 (en) *	2008-12-23	2013-10-22	International Business Machines Corporation	Method for forming thin film resistor and terminal bond pad simultaneously
CN110870067B (zh) *	2017-05-29	2024-04-02	芬兰国家技术研究中心股份公司	半导体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR1471636A (fr) *	1965-03-31	1967-03-03	Ibm	Structure de transistor
US3351825A (en) *	1964-12-21	1967-11-07	Solitron Devices	Semiconductor device having an anodized protective film thereon and method of manufacturing same
US3442701A (en) *	1965-05-19	1969-05-06	Bell Telephone Labor Inc	Method of fabricating semiconductor contacts

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3169892A (en) *	1959-04-08	1965-02-16	Jerome H Lemelson	Method of making a multi-layer electrical circuit
US3356858A (en)	1963-06-18	1967-12-05	Fairchild Camera Instr Co	Low stand-by power complementary field effect circuitry
US3337426A (en) *	1964-06-04	1967-08-22	Gen Dynamics Corp	Process for fabricating electrical circuits
US3386894A (en) *	1964-09-28	1968-06-04	Northern Electric Co	Formation of metallic contacts
USB422695I5 (fr) *	1964-12-31	1900-01-01
FR1522101A (fr) *	1966-05-09	1968-04-19	Motorola Inc	Circuit intégré monolithe
US3634203A (en) *	1969-07-22	1972-01-11	Texas Instruments Inc	Thin film metallization processes for microcircuits

1969
- 1969-06-13 US US04/833,095 patent/US3988214A/en not_active Expired - Lifetime
- 1969-06-13 NL NL6909115.A patent/NL161617C/xx not_active IP Right Cessation
- 1969-06-16 FR FR6919976A patent/FR2011079A1/fr active Pending
- 1969-06-17 GB GB30717/69A patent/GB1276745A/en not_active Expired
- 1969-06-18 DE DE1930669A patent/DE1930669C2/de not_active Expired
- 1969-06-18 DE DE1967363A patent/DE1967363C2/de not_active Expired
1975
- 1975-12-30 MY MY214/75A patent/MY7500214A/xx unknown

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3351825A (en) *	1964-12-21	1967-11-07	Solitron Devices	Semiconductor device having an anodized protective film thereon and method of manufacturing same
FR1471636A (fr) *	1965-03-31	1967-03-03	Ibm	Structure de transistor
US3442701A (en) *	1965-05-19	1969-05-06	Bell Telephone Labor Inc	Method of fabricating semiconductor contacts

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 10, no. 1, juin 1967, pages 8-9, New York (USA); *
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 7, no. 10, mars 1965, page 855, New York (USA); *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2096565A1 (fr) *	1970-06-29	1972-02-18	Western Electric Co
FR2384355A1 (fr) *	1977-03-16	1978-10-13	Philips Nv	Dispositif semi-conducteur et son procede de fabrication
EP0129476A3 (en) *	1983-06-16	1986-12-30	Digital Equipment Corporation	Pattern recessed by anisotropic reactive ion etching and dense multilayer metallization integrated circuits produced thereby

Also Published As

Publication number	Publication date
DE1930669C2 (de)	1986-11-27
US3988214A (en)	1976-10-26
MY7500214A (en)	1975-12-31
GB1276745A (en)	1972-06-07
DE1930669A1 (de)	1970-06-11
NL161617C (nl)	1980-02-15
NL161617B (nl)	1979-09-17
NL6909115A (fr)	1969-12-19
DE1967363C2 (fr)	1988-02-18

Publication	Publication Date	Title
AU1946070A (fr)	1972-05-09
FR2011079A1 (fr)	1970-02-27
AU5506869A (fr)	1970-11-26
AU2374870A (fr)	1972-06-29
AU5184069A (fr)	1970-07-17
AU6168869A (fr)	1971-04-08
AU6171569A (fr)	1971-04-08
AU416157B2 (fr)	1971-08-23
AU2952567A (fr)	1970-05-14
AU2581067A (fr)	1970-02-19
AU421558B1 (fr)	1970-01-29
AU3789668A (fr)	1968-06-20
AU3224368A (fr)	1969-07-17
AU2580267A (fr)	1970-02-05
BE725938A (fr)	1969-05-29
BE708888A (fr)	1968-07-03
BE709496A (fr)	1968-07-17
BE709484A (fr)	1968-05-30
BE709479A (fr)	1968-07-17
BE709446A (fr)	1968-05-30
BE709435A (fr)	1968-07-16
BE709415A (fr)	1968-05-30
BE709320A (fr)	1968-05-16
BE709319A (fr)	1968-05-16
BE709301A (fr)	1968-07-12

FR2011079A1 - - Google Patents

Info

Links

Classifications

Applications Claiming Priority (2)

Publications (1)

Family

ID=26334042

Family Applications (1)

Country Status (6)

Cited By (3)

Families Citing this family (23)

Citations (3)

Family Cites Families (7)

Patent Citations (3)

Non-Patent Citations (2)

Cited By (3)

Also Published As

Similar Documents