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FR1289110A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1289110A
FR1289110A FR861323A FR861323A FR1289110A FR 1289110 A FR1289110 A FR 1289110A FR 861323 A FR861323 A FR 861323A FR 861323 A FR861323 A FR 861323A FR 1289110 A FR1289110 A FR 1289110A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR861323A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1289110A publication Critical patent/FR1289110A/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
FR861323A 1960-05-10 1961-05-09 Dispositif semi-conducteur Expired FR1289110A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES68423A DE1133038B (de) 1960-05-10 1960-05-10 Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
DES68499A DE1133039B (de) 1960-05-10 1960-05-13 Verfahren zum Herstellen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen und mehrere Zonen abwechselnden Leitfaehigkeitstyp enthaltenden Halbleiterkoerper

Publications (1)

Publication Number Publication Date
FR1289110A true FR1289110A (fr) 1962-03-30

Family

ID=25996078

Family Applications (1)

Application Number Title Priority Date Filing Date
FR861323A Expired FR1289110A (fr) 1960-05-10 1961-05-09 Dispositif semi-conducteur

Country Status (5)

Country Link
US (1) US3164500A (fr)
CH (2) CH381329A (fr)
DE (2) DE1133038B (fr)
FR (1) FR1289110A (fr)
GB (2) GB901239A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
NL272046A (fr) * 1961-11-30
NL290680A (fr) * 1962-06-19
BE636316A (fr) 1962-08-23 1900-01-01
BE639315A (fr) * 1962-10-31
US3351826A (en) * 1963-02-05 1967-11-07 Leroy N Hermann Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
DE1234326B (de) * 1963-08-03 1967-02-16 Siemens Ag Steuerbarer Gleichrichter mit einem einkristallinen Halbleiterkoerper und mit vier Zonen abwechselnd entgegengesetzten Leitungstyps
BR6462522D0 (pt) * 1963-10-28 1973-05-15 Rca Corp Dispositivos semicondutores e processo de fabrica-los
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
GB1030670A (en) * 1964-12-02 1966-05-25 Standard Telephones Cables Ltd Semiconductor devices
GB1124762A (en) * 1965-01-08 1968-08-21 Lucas Industries Ltd Semi-conductor devices
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
US4698655A (en) * 1983-09-23 1987-10-06 Motorola, Inc. Overvoltage and overtemperature protection circuit

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
US2629800A (en) * 1950-04-15 1953-02-24 Bell Telephone Labor Inc Semiconductor signal translating device
US2771382A (en) * 1951-12-12 1956-11-20 Bell Telephone Labor Inc Method of fabricating semiconductors for signal translating devices
NL113882C (fr) * 1952-06-13
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
BE530566A (fr) * 1953-07-22
GB765190A (en) * 1954-06-11 1957-01-02 Standard Telephones Cables Ltd Improvements in or relating to the treatment of electric semi-conducting materials
NL99619C (fr) * 1955-06-28
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2845374A (en) * 1955-05-23 1958-07-29 Texas Instruments Inc Semiconductor unit and method of making same
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
NL109817C (fr) * 1955-12-02
US2814853A (en) * 1956-06-14 1957-12-03 Power Equipment Company Manufacturing transistors
US2910653A (en) * 1956-10-17 1959-10-27 Gen Electric Junction transistors and circuits therefor
NL227871A (fr) * 1957-05-21
DE1078237B (de) * 1957-06-29 1960-03-24 Sony Kabushikikaisha Fa Halbleiteranordnung, insbesondere Transistor
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
FR1213751A (fr) * 1958-10-27 1960-04-04 Telecommunications Sa Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion
US2919388A (en) * 1959-03-17 1959-12-29 Hoffman Electronics Corp Semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen

Also Published As

Publication number Publication date
US3164500A (en) 1965-01-05
CH382858A (de) 1964-10-15
DE1133038B (de) 1962-07-12
GB901239A (en) 1962-07-18
GB902559A (en) 1962-08-01
DE1133039B (de) 1962-07-12
CH381329A (de) 1964-08-31

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