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FR1167761A - Procédé et appareil de projection cathodique de pellicules métalliques et diélectriques - Google Patents

Procédé et appareil de projection cathodique de pellicules métalliques et diélectriques

Info

Publication number
FR1167761A
FR1167761A FR1167761DA FR1167761A FR 1167761 A FR1167761 A FR 1167761A FR 1167761D A FR1167761D A FR 1167761DA FR 1167761 A FR1167761 A FR 1167761A
Authority
FR
France
Prior art keywords
metal
dielectric films
cathodic
projection
cathodic projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Edwards High Vacuum Ltd
Original Assignee
Edwards High Vacuum Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Edwards High Vacuum Ltd filed Critical Edwards High Vacuum Ltd
Application granted granted Critical
Publication of FR1167761A publication Critical patent/FR1167761A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/146—Sheet resistance, dopant parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Optical Filters (AREA)
FR1167761D 1955-10-28 1956-10-27 Procédé et appareil de projection cathodique de pellicules métalliques et diélectriques Expired FR1167761A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB30944/55A GB830391A (en) 1955-10-28 1955-10-28 Improvements in or relating to cathodic sputtering of metal and dielectric films

Publications (1)

Publication Number Publication Date
FR1167761A true FR1167761A (fr) 1958-11-28

Family

ID=10315555

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1167761D Expired FR1167761A (fr) 1955-10-28 1956-10-27 Procédé et appareil de projection cathodique de pellicules métalliques et diélectriques

Country Status (4)

Country Link
US (1) US2886502A (fr)
DE (1) DE1116015B (fr)
FR (1) FR1167761A (fr)
GB (1) GB830391A (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3039952A (en) * 1959-03-25 1962-06-19 Western Electric Co Apparatus for depositing films on article surfaces
US3220938A (en) * 1961-03-09 1965-11-30 Bell Telephone Labor Inc Oxide underlay for printed circuit components
US3257305A (en) * 1961-08-14 1966-06-21 Texas Instruments Inc Method of manufacturing a capacitor by reactive sputtering of tantalum oxide onto a silicon substrate
NL124711C (fr) * 1961-10-03
US3271488A (en) * 1961-11-21 1966-09-06 Itt Method of making masks for vapor deposition of electrodes
US3324019A (en) * 1962-12-11 1967-06-06 Schjeldahl Co G T Method of sputtering sequentially from a plurality of cathodes
US3450581A (en) * 1963-04-04 1969-06-17 Texas Instruments Inc Process of coating a semiconductor with a mask and diffusing an impurity therein
GB1054660A (fr) * 1963-09-16
LU45647A1 (fr) * 1964-03-12 1965-09-13
US3351543A (en) * 1964-05-28 1967-11-07 Gen Electric Process of coating diamond with an adherent metal coating using cathode sputtering
US3369989A (en) * 1964-07-22 1968-02-20 Ibm Cathode sputtering apparatus including precision temperature control of substrate
US3457614A (en) * 1964-09-29 1969-07-29 Gen Instrument Corp Process and apparatus for making thin film capacitors
DE1515314C2 (de) * 1966-02-04 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Vorrichtung zur Kathodenzerstäubung mit Ringentladung
US3716472A (en) * 1966-02-04 1973-02-13 Siemens Ag Cathode atomization apparatus
US3616401A (en) * 1966-06-30 1971-10-26 Texas Instruments Inc Sputtered multilayer ohmic molygold contacts for semiconductor devices
US3350293A (en) * 1966-11-14 1967-10-31 Components Inc Passivating silicon semiconductor devices with sputtered tungsten oxide at low temperatures
US3507248A (en) * 1967-06-15 1970-04-21 Ibm Vacuum evaporation coating apparatus including means for precleaning substrates by ion bombardment
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
GB1446848A (en) * 1972-11-29 1976-08-18 Triplex Safety Glass Co Sputtered metal oxide coatings articles comprising transparent electrically-conductive coatings on non-conducting substrates
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
DE3306870A1 (de) * 1983-02-26 1984-08-30 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum herstellen von schichten mit rotationssymmetrischem dickenprofil durch katodenzerstaeubung
US4797527A (en) * 1985-02-06 1989-01-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electrode for electric discharge machining and method for producing the same
US4626336A (en) * 1985-05-02 1986-12-02 Hewlett Packard Company Target for sputter depositing thin films
DE59009235D1 (de) * 1989-11-30 1995-07-20 Siemens Ag Verfahren zur Verringerung der Reflektivität von Sputter-Schichten.
US6328856B1 (en) 1999-08-04 2001-12-11 Seagate Technology Llc Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device
JP4167833B2 (ja) * 2002-01-24 2008-10-22 株式会社ユーテック 成膜装置、酸化物薄膜成膜用基板及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US929017A (en) * 1906-02-14 1909-07-27 James K Reynard Metal-depositing apparatus.
DE542404C (de) * 1929-03-06 1932-01-23 Steatit Magnesia Akt Ges Verfahren zur Herstellung hochohmiger Widerstaende
US1917271A (en) * 1932-01-28 1933-07-11 James G Potter Method of forming coatings of metal and product thereof
US2160981A (en) * 1935-10-19 1939-06-06 O'brien Brian Method and apparatus for producing thin wedges
US2189580A (en) * 1937-05-29 1940-02-06 Gen Electric Method of making a photoelectric cell
GB541739A (en) * 1940-07-16 1941-12-09 Gabor Adam Veszi Improvements in or relating to photo electric cells
US2373639A (en) * 1943-01-23 1945-04-10 Bausch & Lomb Method and apparatus for forming films
FR1107451A (fr) * 1949-11-08 1956-01-03 Materiel Telephonique Perfectionnements à la fabrication des redresseurs secs, notamment au sélénium

Also Published As

Publication number Publication date
GB830391A (en) 1960-03-16
US2886502A (en) 1959-05-12
DE1116015B (de) 1961-10-26

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