FI932024L - Foerfarande foer aostadkommande av kontrollerade utskiljningsprofiler i kieselskivor - Google Patents

Foerfarande foer aostadkommande av kontrollerade utskiljningsprofiler i kieselskivor Download PDF

Info

Publication number: FI932024L
Authority: FI; Finland
Prior art keywords: utskiljningsprofiler; kontrolerade; kieselskivor; foerfarande foer; foer aostadkommande
Prior art date: 1990-11-15

Application number

FI932024A

Other languages

English (en)

Finnish (fi)

Other versions

FI932024A7 (fi

FI932024A0 (fi

Inventor

Robert Falster

Giancarlo Ferrero

Graham Fisher

Massimiliano Olmo

Marco Pagani

Original Assignee

Memc Electronic Materials

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-11-15

Filing date

1991-11-11

Publication date

1993-06-29

1991-11-11 Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials

1993-05-05 Publication of FI932024A0 publication Critical patent/FI932024A0/fi

1993-06-29 Publication of FI932024A7 publication Critical patent/FI932024A7/fi

1993-06-29 Publication of FI932024L publication Critical patent/FI932024L/fi

Classifications

- H10P36/20—

FI932024A 1990-11-15 1991-11-11 Foerfarande foer aostadkommande av kontrollerade utskiljningsprofiler i kieselskivor FI932024L (fi)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
IT48481A IT1242014B (it)	1990-11-15	1990-11-15	Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.
PCT/IT1991/000095 WO1992009101A1 (fr)	1990-11-15	1991-11-11	Procede d'obtention de profils de precipitation regules dans les tranches de silicium

Publications (3)

Publication Number	Publication Date
FI932024A0 FI932024A0 (fi)	1993-05-05
FI932024A7 FI932024A7 (fi)	1993-06-29
FI932024L true FI932024L (fi)	1993-06-29

Family

ID=11266818

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FI932024A FI932024L (fi)	1990-11-15	1991-11-11	Foerfarande foer aostadkommande av kontrollerade utskiljningsprofiler i kieselskivor

Country Status (17)

Country	Link
US (1)	US5403406A (fr)
EP (1)	EP0557415B1 (fr)
JP (2)	JP3412636B2 (fr)
KR (1)	KR100247464B1 (fr)
AT (1)	ATE176084T1 (fr)
AU (1)	AU9033591A (fr)
CZ (1)	CZ84993A3 (fr)
DE (1)	DE69130802T2 (fr)
FI (1)	FI932024L (fr)
IL (1)	IL99979A (fr)
IT (1)	IT1242014B (fr)
MY (1)	MY110258A (fr)
SG (1)	SG64901A1 (fr)
SK (1)	SK47093A3 (fr)
TW (1)	TW205110B (fr)
WO (1)	WO1992009101A1 (fr)
ZA (1)	ZA918831B (fr)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0574782A (ja) *	1991-09-10	1993-03-26	Mitsubishi Materials Corp	シリコン基板の製造方法
JPH0684925A (ja) *	1992-07-17	1994-03-25	Toshiba Corp	半導体基板およびその処理方法
JP2874834B2 (ja) *	1994-07-29	1999-03-24	三菱マテリアル株式会社	シリコンウェーハのイントリンシックゲッタリング処理法
US5788763A (en) *	1995-03-09	1998-08-04	Toshiba Ceramics Co., Ltd.	Manufacturing method of a silicon wafer having a controlled BMD concentration
US5593494A (en) *	1995-03-14	1997-01-14	Memc Electronic Materials, Inc.	Precision controlled precipitation of oxygen in silicon
SG64470A1 (en)	1997-02-13	1999-04-27	Samsung Electronics Co Ltd	Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6485807B1 (en)	1997-02-13	2002-11-26	Samsung Electronics Co., Ltd.	Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6503594B2 (en)	1997-02-13	2003-01-07	Samsung Electronics Co., Ltd.	Silicon wafers having controlled distribution of defects and slip
US5994761A (en)	1997-02-26	1999-11-30	Memc Electronic Materials Spa	Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
SG105513A1 (en)	1997-04-09	2004-08-27	Memc Electronics Materials Inc	Low defect density, ideal oxygen precipitating silicon
TW429478B (en) *	1997-08-29	2001-04-11	Toshiba Corp	Semiconductor device and method for manufacturing the same
US5882989A (en) *	1997-09-22	1999-03-16	Memc Electronic Materials, Inc.	Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
US6340392B1 (en)	1997-10-24	2002-01-22	Samsung Electronics Co., Ltd.	Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
JPH11150119A (ja) *	1997-11-14	1999-06-02	Sumitomo Sitix Corp	シリコン半導体基板の熱処理方法とその装置
JP3746153B2 (ja) *	1998-06-09	2006-02-15	信越半導体株式会社	シリコンウエーハの熱処理方法
US6828690B1 (en) *	1998-08-05	2004-12-07	Memc Electronic Materials, Inc.	Non-uniform minority carrier lifetime distributions in high performance silicon power devices
DE69928434T2 (de)	1998-09-02	2006-07-27	Memc Electronic Materials, Inc.	Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung
KR100957729B1 (ko)	1998-09-02	2010-05-12	엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드	이상적 산소 침전 실리콘 웨이퍼의 제조 방법
US6336968B1 (en) *	1998-09-02	2002-01-08	Memc Electronic Materials, Inc.	Non-oxygen precipitating czochralski silicon wafers
EP1114454A2 (fr) *	1998-09-02	2001-07-11	MEMC Electronic Materials, Inc.	Structure silicium sur isolant obtenue a partir d'un silicium monocristallin a faible taux de defauts
WO2000022198A1 (fr)	1998-10-14	2000-04-20	Memc Electronic Materials, Inc.	Tranche de silicium monocristallin thermorecuit presentant peu de defauts
JP2000154070A (ja) *	1998-11-16	2000-06-06	Suminoe Textile Co Ltd	セラミックス三次元構造体及びその製造方法
US6284384B1 (en) *	1998-12-09	2001-09-04	Memc Electronic Materials, Inc.	Epitaxial silicon wafer with intrinsic gettering
DE19924649B4 (de) *	1999-05-28	2004-08-05	Siltronic Ag	Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben
US20030051656A1 (en)	1999-06-14	2003-03-20	Charles Chiun-Chieh Yang	Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6635587B1 (en)	1999-09-23	2003-10-21	Memc Electronic Materials, Inc.	Method for producing czochralski silicon free of agglomerated self-interstitial defects
KR100378184B1 (ko) *	1999-11-13	2003-03-29	삼성전자주식회사	제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP2001308101A (ja) *	2000-04-19	2001-11-02	Mitsubishi Materials Silicon Corp	シリコンウェーハの熱処理方法及びシリコンウェーハ
DE10024710A1 (de)	2000-05-18	2001-12-20	Steag Rtp Systems Gmbh	Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen
US6339016B1 (en)	2000-06-30	2002-01-15	Memc Electronic Materials, Inc.	Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6599815B1 (en)	2000-06-30	2003-07-29	Memc Electronic Materials, Inc.	Method and apparatus for forming a silicon wafer with a denuded zone
EP1295324A1 (fr) *	2000-06-30	2003-03-26	MEMC Electronic Materials, Inc.	Procede et appareil destines a former une plaquette presentant une zone denudee
JP4055343B2 (ja) *	2000-09-26	2008-03-05	株式会社Ｓｕｍｃｏ	シリコン半導体基板の熱処理方法
JP4106862B2 (ja) *	2000-10-25	2008-06-25	信越半導体株式会社	シリコンウェーハの製造方法
US6897084B2 (en) *	2001-04-11	2005-05-24	Memc Electronic Materials, Inc.	Control of oxygen precipitate formation in high resistivity CZ silicon
TW541581B (en) *	2001-04-20	2003-07-11	Memc Electronic Materials	Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
US7883628B2 (en) *	2001-07-04	2011-02-08	S.O.I.Tec Silicon On Insulator Technologies	Method of reducing the surface roughness of a semiconductor wafer
FR2827078B1 (fr) *	2001-07-04	2005-02-04	Soitec Silicon On Insulator	Procede de diminution de rugosite de surface
US7749910B2 (en) *	2001-07-04	2010-07-06	S.O.I.Tec Silicon On Insulator Technologies	Method of reducing the surface roughness of a semiconductor wafer
JP4567251B2 (ja) *	2001-09-14	2010-10-20	シルトロニック・ジャパン株式会社	シリコン半導体基板およびその製造方法
US6955718B2 (en) *	2003-07-08	2005-10-18	Memc Electronic Materials, Inc.	Process for preparing a stabilized ideal oxygen precipitating silicon wafer
JP2005051040A (ja) *	2003-07-29	2005-02-24	Matsushita Electric Ind Co Ltd	半導体装置の製造方法及び半導体基板
KR100531552B1 (ko) *	2003-09-05	2005-11-28	주식회사 하이닉스반도체	실리콘 웨이퍼 및 그 제조방법
US7485928B2 (en) *	2005-11-09	2009-02-03	Memc Electronic Materials, Inc.	Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
US20090004426A1 (en) *	2007-06-29	2009-01-01	Memc Electronic Materials, Inc.	Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) *	2007-06-29	2009-01-01	Memc Electronic Materials, Inc.	Diffusion Control in Heavily Doped Substrates
JP2009177194A (ja) *	2009-03-19	2009-08-06	Sumco Corp	シリコンウェーハの製造方法、シリコンウェーハ
JP7110204B2 (ja) *	2016-12-28	2022-08-01	サンエディソン・セミコンダクター・リミテッド	イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5680139A (en) *	1979-12-05	1981-07-01	Chiyou Lsi Gijutsu Kenkyu Kumiai	Manufacture of semiconductor device
JPS56158431A (en) *	1980-05-13	1981-12-07	Meidensha Electric Mfg Co Ltd	Forming of oxidized film of semiconductor element for electric power
JPS5787119A (en) *	1980-11-19	1982-05-31	Toshiba Corp	Manufacture of semiconductor device
US4430995A (en) *	1981-05-29	1984-02-14	Hilton Joseph R	Power assisted air-purifying respirators
JPS57197827A (en) *	1981-05-29	1982-12-04	Hitachi Ltd	Semiconductor substrate
US4548654A (en) *	1983-06-03	1985-10-22	Motorola, Inc.	Surface denuding of silicon wafer
JPS60133734A (ja) *	1983-12-21	1985-07-16	Mitsubishi Electric Corp	半導体装置の製造方法
JPH0697664B2 (ja) *	1984-05-11	1994-11-30	住友電気工業株式会社	化合物半導体のアニ−ル法
US4622082A (en) *	1984-06-25	1986-11-11	Monsanto Company	Conditioned semiconductor substrates
US4868133A (en) *	1988-02-11	1989-09-19	Dns Electronic Materials, Inc.	Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
US4851358A (en) *	1988-02-11	1989-07-25	Dns Electronic Materials, Inc.	Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US5228927A (en) *	1988-03-25	1993-07-20	Shin-Etsu Handotai Company Limited	Method for heat-treating gallium arsenide monocrystals
US5096839A (en) *	1989-09-20	1992-03-17	Kabushiki Kaisha Toshiba	Silicon wafer with defined interstitial oxygen concentration

1990
- 1990-11-15 IT IT48481A patent/IT1242014B/it active IP Right Grant
1991
- 1991-11-07 IL IL9997991A patent/IL99979A/en not_active IP Right Cessation
- 1991-11-07 ZA ZA918831A patent/ZA918831B/xx unknown
- 1991-11-08 MY MYPI91002071A patent/MY110258A/en unknown
- 1991-11-11 AT AT92900331T patent/ATE176084T1/de not_active IP Right Cessation
- 1991-11-11 DE DE69130802T patent/DE69130802T2/de not_active Expired - Lifetime
- 1991-11-11 SG SG1996006807A patent/SG64901A1/en unknown
- 1991-11-11 AU AU90335/91A patent/AU9033591A/en not_active Abandoned
- 1991-11-11 SK SK47093A patent/SK47093A3/sk unknown
- 1991-11-11 FI FI932024A patent/FI932024L/fi unknown
- 1991-11-11 US US08/064,013 patent/US5403406A/en not_active Expired - Lifetime
- 1991-11-11 KR KR1019930701407A patent/KR100247464B1/ko not_active Expired - Lifetime
- 1991-11-11 EP EP92900331A patent/EP0557415B1/fr not_active Expired - Lifetime
- 1991-11-11 JP JP50121392A patent/JP3412636B2/ja not_active Expired - Lifetime
- 1991-11-11 WO PCT/IT1991/000095 patent/WO1992009101A1/fr not_active Ceased
- 1991-11-11 CZ CZ93849A patent/CZ84993A3/cs unknown
- 1991-11-19 TW TW080109066A patent/TW205110B/zh not_active IP Right Cessation
2002
- 2002-12-25 JP JP2002373700A patent/JP2003243402A/ja active Pending

Also Published As

Publication number	Publication date
ATE176084T1 (de)	1999-02-15
MY110258A (en)	1998-03-31
TW205110B (fr)	1993-05-01
US5403406A (en)	1995-04-04
JPH06504878A (ja)	1994-06-02
IL99979A0 (en)	1992-08-18
FI932024A7 (fi)	1993-06-29
IT9048481A1 (it)	1992-05-15
WO1992009101A1 (fr)	1992-05-29
EP0557415B1 (fr)	1999-01-20
ZA918831B (en)	1992-08-26
EP0557415A1 (fr)	1993-09-01
CZ84993A3 (en)	1993-11-17
IT9048481A0 (it)	1990-11-15
FI932024A0 (fi)	1993-05-05
IT1242014B (it)	1994-02-02
AU9033591A (en)	1992-06-11
DE69130802D1 (de)	1999-03-04
SG64901A1 (en)	1999-05-25
JP3412636B2 (ja)	2003-06-03
IL99979A (en)	1995-07-31
KR100247464B1 (ko)	2000-03-15
SK47093A3 (en)	1993-08-11
JP2003243402A (ja)	2003-08-29
DE69130802T2 (de)	1999-08-19

Publication	Publication Date	Title
FI931357A0 (fi)	1993-03-26	Framstaellning av polyhydroxifettsyraamider i naervaro av loesningsmedel
FI932024L (fi)	1993-06-29	Foerfarande foer aostadkommande av kontrollerade utskiljningsprofiler i kieselskivor
FI930862L (fi)	1993-02-25	En doseringsform foer tidsvarierande moenster av laekemedeloeverlaotelse
FI930886L (fi)	1993-03-31	Foerfarande foer hindrande av avstoetning av transplanterad vaevnad
FI930848A0 (fi)	1993-02-25	Foerfarande foer separering av ilmenit
FI923931L (fi)	1992-09-02	Anordning foer granskning av insidan av en foergrenad roerlinje
FI930736L (fi)	1993-02-18	Foerfarande foer framstaellning av ramnos fraon ramnolipider
FI930509L (fi)	1993-02-05	Anvaendning av graensytpolymeriserade membraner i doseringsanordningar
FI930763A7 (fi)	1993-04-05	Framstaellning av klordioxid fraon klorsyra
FI930165L (fi)	1993-01-15	Framstaellning av synnerligen aktiva tvaettmedelspartiklar
FI924569L (fi)	1992-10-09	Foerfarande foer enantioselektiv framstaellning av fenylisoserinderivat
FI924568L (fi)	1992-10-09	Foerfarande foer stereoselektiv framstaellning av fenylisoserinderivat
FI931428L (fi)	1993-03-30	Anordning foer framstaellning av flerskiktspapper eller- kartong
FI931355A0 (fi)	1993-03-26	Fasoeverfoeringsmedierat foerfarande foer framstaellning av glukamidtvaettmedel
FI925988L (fi)	1992-12-31	Foerfarande foer framstaellning av b-laktamer
FI925515L (fi)	1992-12-04	Foerfarande foer framstaellning av alfa-2-interferonkristaller
FI925415L (fi)	1992-11-27	Framstaellning av substituerade piperidiner
FI931354L (fi)	1993-03-26	Hoegkatalytiskt foerfarande foer framstaellning av glukamidtvaettmedel
FI924512L (fi)	1992-10-07	Foerfarande foer synkronisering av en pseudoslumpmaessig binaersekvens i en desscrambler
FI924436A7 (fi)	1992-10-02	Foerfarande foer tillverkning av expanderade polystyrenfolier
FI931356A0 (fi)	1993-03-26	Foerbaettrat katalytiskt foerfarande foer framstaellning av glukamidtvaettmedel
FI925805L (fi)	1992-12-21	Framstaellning av kompositmaterial
FI924826L (fi)	1992-10-23	Fettkompositioner innehaollande polyestrar av polyolfettsyror
FI925609A0 (fi)	1992-12-10	Foerfarande foer framstaellning av sykliska sulfater
FI923779L (fi)	1992-08-21	Foerbaettringar i tillverkningen av nylongarn