ZA918831B - A process for the treatment of silicon wafers in order to achieve controlled precipitation profiles therein adapted for manufacturing electronic components - Google Patents
A process for the treatment of silicon wafers in order to achieve controlled precipitation profiles therein adapted for manufacturing electronic componentsInfo
- Publication number
- ZA918831B ZA918831B ZA918831A ZA918831A ZA918831B ZA 918831 B ZA918831 B ZA 918831B ZA 918831 A ZA918831 A ZA 918831A ZA 918831 A ZA918831 A ZA 918831A ZA 918831 B ZA918831 B ZA 918831B
- Authority
- ZA
- South Africa
- Prior art keywords
- face
- treatment
- electronic components
- order
- silicon wafers
- Prior art date
Links
Classifications
-
- H10P36/20—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Surgical Instruments (AREA)
- Safety Valves (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT48481A IT1242014B (it) | 1990-11-15 | 1990-11-15 | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ZA918831B true ZA918831B (en) | 1992-08-26 |
Family
ID=11266818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ZA918831A ZA918831B (en) | 1990-11-15 | 1991-11-07 | A process for the treatment of silicon wafers in order to achieve controlled precipitation profiles therein adapted for manufacturing electronic components |
Country Status (17)
| Country | Link |
|---|---|
| US (1) | US5403406A (fr) |
| EP (1) | EP0557415B1 (fr) |
| JP (2) | JP3412636B2 (fr) |
| KR (1) | KR100247464B1 (fr) |
| AT (1) | ATE176084T1 (fr) |
| AU (1) | AU9033591A (fr) |
| CZ (1) | CZ84993A3 (fr) |
| DE (1) | DE69130802T2 (fr) |
| FI (1) | FI932024A7 (fr) |
| IL (1) | IL99979A (fr) |
| IT (1) | IT1242014B (fr) |
| MY (1) | MY110258A (fr) |
| SG (1) | SG64901A1 (fr) |
| SK (1) | SK47093A3 (fr) |
| TW (1) | TW205110B (fr) |
| WO (1) | WO1992009101A1 (fr) |
| ZA (1) | ZA918831B (fr) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0574782A (ja) * | 1991-09-10 | 1993-03-26 | Mitsubishi Materials Corp | シリコン基板の製造方法 |
| JPH0684925A (ja) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
| JP2874834B2 (ja) * | 1994-07-29 | 1999-03-24 | 三菱マテリアル株式会社 | シリコンウェーハのイントリンシックゲッタリング処理法 |
| US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| SG64470A1 (en) | 1997-02-13 | 1999-04-27 | Samsung Electronics Co Ltd | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
| US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
| US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| DE69841714D1 (de) | 1997-04-09 | 2010-07-22 | Memc Electronic Materials | Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag |
| TW429478B (en) * | 1997-08-29 | 2001-04-11 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
| US5882989A (en) * | 1997-09-22 | 1999-03-16 | Memc Electronic Materials, Inc. | Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers |
| US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
| JPH11150119A (ja) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
| JP3746153B2 (ja) | 1998-06-09 | 2006-02-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
| US6828690B1 (en) * | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
| KR100581305B1 (ko) * | 1998-09-02 | 2006-05-22 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 저결함 밀도 단결정 실리콘으로부터의 ｓｏｉ 구조체 |
| US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
| CN1181522C (zh) | 1998-09-02 | 2004-12-22 | Memc电子材料有限公司 | 具有改进的内部收气的热退火单晶硅片及其热处理工艺 |
| KR100957729B1 (ko) | 1998-09-02 | 2010-05-12 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 이상적 산소 침전 실리콘 웨이퍼의 제조 방법 |
| CN1296526C (zh) * | 1998-10-14 | 2007-01-24 | Memc电子材料有限公司 | 热退火后的低缺陷密度单晶硅 |
| JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
| US6284384B1 (en) | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| DE19924649B4 (de) * | 1999-05-28 | 2004-08-05 | Siltronic Ag | Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben |
| US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
| US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| KR100378184B1 (ko) * | 1999-11-13 | 2003-03-29 | 삼성전자주식회사 | 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러 |
| JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
| DE10024710A1 (de) * | 2000-05-18 | 2001-12-20 | Steag Rtp Systems Gmbh | Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen |
| US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| EP1295324A1 (fr) * | 2000-06-30 | 2003-03-26 | MEMC Electronic Materials, Inc. | Procede et appareil destines a former une plaquette presentant une zone denudee |
| US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
| JP4055343B2 (ja) * | 2000-09-26 | 2008-03-05 | 株式会社Ｓｕｍｃｏ | シリコン半導体基板の熱処理方法 |
| JP4106862B2 (ja) | 2000-10-25 | 2008-06-25 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
| WO2002084728A1 (fr) * | 2001-04-11 | 2002-10-24 | Memc Electronic Materials, Inc. | Commande de la formation d'un donneur thermique dans le silicium d'oxyde de zirconium a haute resistivite |
| US20020179006A1 (en) * | 2001-04-20 | 2002-12-05 | Memc Electronic Materials, Inc. | Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates |
| US7749910B2 (en) * | 2001-07-04 | 2010-07-06 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
| FR2827078B1 (fr) * | 2001-07-04 | 2005-02-04 | Soitec Silicon On Insulator | Procede de diminution de rugosite de surface |
| US7883628B2 (en) * | 2001-07-04 | 2011-02-08 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
| JP4567251B2 (ja) * | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
| US6955718B2 (en) * | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| JP2005051040A (ja) * | 2003-07-29 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体基板 |
| KR100531552B1 (ko) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | 실리콘 웨이퍼 및 그 제조방법 |
| US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
| US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
| JP2009177194A (ja) * | 2009-03-19 | 2009-08-06 | Sumco Corp | シリコンウェーハの製造方法、シリコンウェーハ |
| KR102453743B1 (ko) * | 2016-12-28 | 2022-10-11 | 썬에디슨 세미컨덕터 리미티드 | 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS56158431A (en) * | 1980-05-13 | 1981-12-07 | Meidensha Electric Mfg Co Ltd | Forming of oxidized film of semiconductor element for electric power |
| JPS5787119A (en) * | 1980-11-19 | 1982-05-31 | Toshiba Corp | Manufacture of semiconductor device |
| US4430995A (en) * | 1981-05-29 | 1984-02-14 | Hilton Joseph R | Power assisted air-purifying respirators |
| JPS57197827A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor substrate |
| US4548654A (en) * | 1983-06-03 | 1985-10-22 | Motorola, Inc. | Surface denuding of silicon wafer |
| JPS60133734A (ja) * | 1983-12-21 | 1985-07-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0697664B2 (ja) * | 1984-05-11 | 1994-11-30 | 住友電気工業株式会社 | 化合物半導体のアニ−ル法 |
| US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
| US4868133A (en) * | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
| US4851358A (en) * | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
| US5228927A (en) * | 1988-03-25 | 1993-07-20 | Shin-Etsu Handotai Company Limited | Method for heat-treating gallium arsenide monocrystals |
| US5096839A (en) * | 1989-09-20 | 1992-03-17 | Kabushiki Kaisha Toshiba | Silicon wafer with defined interstitial oxygen concentration |
-
1990
- 1990-11-15 IT IT48481A patent/IT1242014B/it active IP Right Grant
-
1991
- 1991-11-07 IL IL9997991A patent/IL99979A/en not_active IP Right Cessation
- 1991-11-07 ZA ZA918831A patent/ZA918831B/xx unknown
- 1991-11-08 MY MYPI91002071A patent/MY110258A/en unknown
- 1991-11-11 AT AT92900331T patent/ATE176084T1/de not_active IP Right Cessation
- 1991-11-11 AU AU90335/91A patent/AU9033591A/en not_active Abandoned
- 1991-11-11 EP EP92900331A patent/EP0557415B1/fr not_active Expired - Lifetime
- 1991-11-11 JP JP50121392A patent/JP3412636B2/ja not_active Expired - Lifetime
- 1991-11-11 FI FI932024A patent/FI932024A7/fi unknown
- 1991-11-11 SK SK47093A patent/SK47093A3/sk unknown
- 1991-11-11 DE DE69130802T patent/DE69130802T2/de not_active Expired - Lifetime
- 1991-11-11 WO PCT/IT1991/000095 patent/WO1992009101A1/fr not_active Ceased
- 1991-11-11 SG SG1996006807A patent/SG64901A1/en unknown
- 1991-11-11 US US08/064,013 patent/US5403406A/en not_active Expired - Lifetime
- 1991-11-11 KR KR1019930701407A patent/KR100247464B1/ko not_active Expired - Lifetime
- 1991-11-11 CZ CZ93849A patent/CZ84993A3/cs unknown
- 1991-11-19 TW TW080109066A patent/TW205110B/zh not_active IP Right Cessation
-
2002
- 2002-12-25 JP JP2002373700A patent/JP2003243402A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT9048481A0 (it) | 1990-11-15 |
| DE69130802D1 (de) | 1999-03-04 |
| IT1242014B (it) | 1994-02-02 |
| EP0557415B1 (fr) | 1999-01-20 |
| IT9048481A1 (it) | 1992-05-15 |
| US5403406A (en) | 1995-04-04 |
| ATE176084T1 (de) | 1999-02-15 |
| CZ84993A3 (en) | 1993-11-17 |
| JP3412636B2 (ja) | 2003-06-03 |
| MY110258A (en) | 1998-03-31 |
| EP0557415A1 (fr) | 1993-09-01 |
| FI932024L (fi) | 1993-06-29 |
| JP2003243402A (ja) | 2003-08-29 |
| WO1992009101A1 (fr) | 1992-05-29 |
| SK47093A3 (en) | 1993-08-11 |
| AU9033591A (en) | 1992-06-11 |
| TW205110B (fr) | 1993-05-01 |
| FI932024A7 (fi) | 1993-06-29 |
| IL99979A (en) | 1995-07-31 |
| IL99979A0 (en) | 1992-08-18 |
| KR100247464B1 (ko) | 2000-03-15 |
| FI932024A0 (fi) | 1993-05-05 |
| DE69130802T2 (de) | 1999-08-19 |
| SG64901A1 (en) | 1999-05-25 |
| JPH06504878A (ja) | 1994-06-02 |
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