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FI20105905A0 - Suutinpää ja laite - Google Patents

Suutinpää ja laite

Info

Publication number
FI20105905A0
FI20105905A0 FI20105905A FI20105905A FI20105905A0 FI 20105905 A0 FI20105905 A0 FI 20105905A0 FI 20105905 A FI20105905 A FI 20105905A FI 20105905 A FI20105905 A FI 20105905A FI 20105905 A0 FI20105905 A0 FI 20105905A0
Authority
FI
Finland
Prior art keywords
spray head
spray
head
Prior art date
Application number
FI20105905A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Inventor
Pekka Soininen
Olli Pekonen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105905A priority Critical patent/FI20105905A0/fi
Publication of FI20105905A0 publication Critical patent/FI20105905A0/fi
Priority to TW100130880A priority patent/TWI601575B/zh
Priority to PCT/FI2011/050748 priority patent/WO2012028780A1/en
Priority to DE112011102855T priority patent/DE112011102855T5/de
Priority to US13/817,977 priority patent/US9803281B2/en
Priority to CN201180041752.7A priority patent/CN103108984B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FI20105905A 2010-08-30 2010-08-30 Suutinpää ja laite FI20105905A0 (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20105905A FI20105905A0 (fi) 2010-08-30 2010-08-30 Suutinpää ja laite
TW100130880A TWI601575B (zh) 2010-08-30 2011-08-29 噴嘴頭與裝置及其操作方法
PCT/FI2011/050748 WO2012028780A1 (en) 2010-08-30 2011-08-29 Nozzle head and apparatus
DE112011102855T DE112011102855T5 (de) 2010-08-30 2011-08-29 Düsenkopf und Anordnung
US13/817,977 US9803281B2 (en) 2010-08-30 2011-08-29 Nozzle head and apparatus
CN201180041752.7A CN103108984B (zh) 2010-08-30 2011-08-29 喷嘴头和装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105905A FI20105905A0 (fi) 2010-08-30 2010-08-30 Suutinpää ja laite

Publications (1)

Publication Number Publication Date
FI20105905A0 true FI20105905A0 (fi) 2010-08-30

Family

ID=42669409

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105905A FI20105905A0 (fi) 2010-08-30 2010-08-30 Suutinpää ja laite

Country Status (6)

Country Link
US (1) US9803281B2 (zh)
CN (1) CN103108984B (zh)
DE (1) DE112011102855T5 (zh)
FI (1) FI20105905A0 (zh)
TW (1) TWI601575B (zh)
WO (1) WO2012028780A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI125341B (en) * 2012-07-09 2015-08-31 Beneq Oy Apparatus and method for treating substrate
JP6017396B2 (ja) * 2012-12-18 2016-11-02 東京エレクトロン株式会社 薄膜形成方法および薄膜形成装置
NL2010893C2 (en) * 2013-05-30 2014-12-02 Solaytec B V Injector head for atomic layer deposition.
WO2017103333A1 (en) * 2015-12-17 2017-06-22 Beneq Oy A coating precursor nozzle and a nozzle head
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
JP6640781B2 (ja) * 2017-03-23 2020-02-05 キオクシア株式会社 半導体製造装置
FI128427B (en) * 2018-04-12 2020-05-15 Beneq Oy Nozzle head and device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH086181B2 (ja) * 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
KR20030038396A (ko) * 2001-11-01 2003-05-16 에이에스엠엘 유에스, 인코포레이티드 우선적인 화학 기상 증착 장치 및 방법
JP4393844B2 (ja) * 2003-11-19 2010-01-06 東京エレクトロン株式会社 プラズマ成膜装置及びプラズマ成膜方法
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
KR100802382B1 (ko) * 2006-03-21 2008-02-13 주식회사 아토 가스분리형 샤워헤드를 이용한 원자층 증착 장치
DE602007014190D1 (de) 2006-03-26 2011-06-09 Lotus Applied Technology Llc Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten
US20070281089A1 (en) 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
US20080260963A1 (en) * 2007-04-17 2008-10-23 Hyungsuk Alexander Yoon Apparatus and method for pre and post treatment of atomic layer deposition
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
KR100957492B1 (ko) * 2008-05-06 2010-05-17 주식회사 휘닉스 디지탈테크 소스 가스와 반응 가스의 배기 속도와 퍼지 가스의 배기속도를 다르게 하는 가스 분사 헤드와 상기 가스 분사헤드를 구비하는 원자층 박막 증착 장치
US8657959B2 (en) * 2009-07-31 2014-02-25 E I Du Pont De Nemours And Company Apparatus for atomic layer deposition on a moving substrate
EP2362002A1 (en) * 2010-02-18 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Continuous patterned layer deposition

Also Published As

Publication number Publication date
US20130149446A1 (en) 2013-06-13
WO2012028780A1 (en) 2012-03-08
DE112011102855T5 (de) 2013-08-01
US9803281B2 (en) 2017-10-31
CN103108984A (zh) 2013-05-15
TW201217060A (en) 2012-05-01
TWI601575B (zh) 2017-10-11
CN103108984B (zh) 2015-09-30

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Legal Events

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