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FI20105901A0 - Laite ja menetelmä - Google Patents

Laite ja menetelmä

Info

Publication number
FI20105901A0
FI20105901A0 FI20105901A FI20105901A FI20105901A0 FI 20105901 A0 FI20105901 A0 FI 20105901A0 FI 20105901 A FI20105901 A FI 20105901A FI 20105901 A FI20105901 A FI 20105901A FI 20105901 A0 FI20105901 A0 FI 20105901A0
Authority
FI
Finland
Application number
FI20105901A
Other languages
English (en)
Swedish (sv)
Other versions
FI124113B (fi
FI20105901L (fi
Inventor
Pekka Soininen
Sami Sneck
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105901A priority Critical patent/FI124113B/fi
Publication of FI20105901A0 publication Critical patent/FI20105901A0/fi
Priority to US13/816,870 priority patent/US9783887B2/en
Priority to DE112011102860T priority patent/DE112011102860T5/de
Priority to CN201180041761.6A priority patent/CN103080373B/zh
Priority to TW100131024A priority patent/TWI542726B/zh
Priority to PCT/FI2011/050752 priority patent/WO2012028784A1/en
Publication of FI20105901L publication Critical patent/FI20105901L/fi
Application granted granted Critical
Publication of FI124113B publication Critical patent/FI124113B/fi
Priority to US15/696,890 priority patent/US20170362708A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FI20105901A 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi FI124113B (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20105901A FI124113B (fi) 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
US13/816,870 US9783887B2 (en) 2010-08-30 2011-08-30 Apparatus and method
DE112011102860T DE112011102860T5 (de) 2010-08-30 2011-08-30 Anordnung und Verfahren
CN201180041761.6A CN103080373B (zh) 2010-08-30 2011-08-30 用于处理基体的表面的装置和方法
TW100131024A TWI542726B (zh) 2010-08-30 2011-08-30 裝置及方法
PCT/FI2011/050752 WO2012028784A1 (en) 2010-08-30 2011-08-30 Apparatus and method
US15/696,890 US20170362708A1 (en) 2010-08-30 2017-09-06 Apparatus and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20105901 2010-08-30
FI20105901A FI124113B (fi) 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi

Publications (3)

Publication Number Publication Date
FI20105901A0 true FI20105901A0 (fi) 2010-08-30
FI20105901L FI20105901L (fi) 2012-03-01
FI124113B FI124113B (fi) 2014-03-31

Family

ID=42669405

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105901A FI124113B (fi) 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi

Country Status (6)

Country Link
US (2) US9783887B2 (fi)
CN (1) CN103080373B (fi)
DE (1) DE112011102860T5 (fi)
FI (1) FI124113B (fi)
TW (1) TWI542726B (fi)
WO (1) WO2012028784A1 (fi)

Families Citing this family (284)

* Cited by examiner, † Cited by third party
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FI124113B (fi) * 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
FI124298B (fi) 2012-06-25 2014-06-13 Beneq Oy Laite substraatin pinnan käsittelemiseksi ja suutinpää
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
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US9583707B2 (en) * 2014-09-19 2017-02-28 Universal Display Corporation Micro-nozzle and micro-nozzle array for OVJP and method of manufacturing the same
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KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
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US20130164458A1 (en) 2013-06-27
CN103080373B (zh) 2016-01-20
TW201211307A (en) 2012-03-16
FI124113B (fi) 2014-03-31
US20170362708A1 (en) 2017-12-21
FI20105901L (fi) 2012-03-01
WO2012028784A1 (en) 2012-03-08
TWI542726B (zh) 2016-07-21
DE112011102860T5 (de) 2013-08-08
US9783887B2 (en) 2017-10-10

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