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FI20050707L - Puolijohderakenne ja menetelmä puolijohderakenteen valmistamiseksi - Google Patents

Puolijohderakenne ja menetelmä puolijohderakenteen valmistamiseksi Download PDF

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Publication number
FI20050707L
FI20050707L FI20050707A FI20050707A FI20050707L FI 20050707 L FI20050707 L FI 20050707L FI 20050707 A FI20050707 A FI 20050707A FI 20050707 A FI20050707 A FI 20050707A FI 20050707 L FI20050707 L FI 20050707L
Authority
FI
Finland
Prior art keywords
semiconductor structure
manufacturing
semiconductor
Prior art date
Application number
FI20050707A
Other languages
English (en)
Swedish (sv)
Other versions
FI20050707A0 (fi
FI118196B (fi
Inventor
Vladislav E Bougrov
Maxim A Odnoblyudov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Publication of FI20050707A0 publication Critical patent/FI20050707A0/fi
Priority to FI20050707A priority Critical patent/FI118196B/fi
Priority to US11/988,055 priority patent/US7763904B2/en
Priority to RU2008102874/28A priority patent/RU2391746C2/ru
Priority to CNB200680023943XA priority patent/CN100568560C/zh
Priority to EP06764446A priority patent/EP1908122A4/en
Priority to JP2008518877A priority patent/JP5247439B2/ja
Priority to PCT/FI2006/000220 priority patent/WO2007003684A1/en
Priority to KR1020087002038A priority patent/KR101238310B1/ko
Priority to HK08113431.2A priority patent/HK1124172B/xx
Priority to TW095122874A priority patent/TWI390724B/zh
Publication of FI20050707L publication Critical patent/FI20050707L/fi
Application granted granted Critical
Publication of FI118196B publication Critical patent/FI118196B/fi
Priority to US12/829,466 priority patent/US8062913B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
FI20050707A 2005-01-07 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä FI118196B (fi)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FI20050707A FI118196B (fi) 2005-07-01 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
PCT/FI2006/000220 WO2007003684A1 (en) 2005-07-01 2006-06-20 Semiconductor structure and method of manufacturing a semiconductor structure
RU2008102874/28A RU2391746C2 (ru) 2005-07-01 2006-06-20 Полупроводниковая структура и способ изготовления полупроводниковой структуры
CNB200680023943XA CN100568560C (zh) 2005-07-01 2006-06-20 半导体结构及制造半导体结构的方法
EP06764446A EP1908122A4 (en) 2005-07-01 2006-06-20 SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE
JP2008518877A JP5247439B2 (ja) 2005-07-01 2006-06-20 半導体構造および半導体構造を製造する方法
US11/988,055 US7763904B2 (en) 2005-01-07 2006-06-20 Semiconductor structure and method of manufacturing a semiconductor structure
KR1020087002038A KR101238310B1 (ko) 2005-07-01 2006-06-20 반도체 구조 및 반도체 구조의 제조 방법
HK08113431.2A HK1124172B (en) 2005-07-01 2006-06-20 Semiconductor structure and method of manufacturing a semiconductor structure
TW095122874A TWI390724B (zh) 2005-07-01 2006-06-26 半導體結構體及其製造方法
US12/829,466 US8062913B2 (en) 2005-07-01 2010-07-02 Semiconductor structure and method of manufacturing a semiconductor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20050707 2005-07-01
FI20050707A FI118196B (fi) 2005-07-01 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä

Publications (3)

Publication Number Publication Date
FI20050707A0 FI20050707A0 (fi) 2005-07-01
FI20050707L true FI20050707L (fi) 2007-01-02
FI118196B FI118196B (fi) 2007-08-15

Family

ID=34803175

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20050707A FI118196B (fi) 2005-01-07 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä

Country Status (9)

Country Link
US (2) US7763904B2 (fi)
EP (1) EP1908122A4 (fi)
JP (1) JP5247439B2 (fi)
KR (1) KR101238310B1 (fi)
CN (1) CN100568560C (fi)
FI (1) FI118196B (fi)
RU (1) RU2391746C2 (fi)
TW (1) TWI390724B (fi)
WO (1) WO2007003684A1 (fi)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182069A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体発光素子
TWI321366B (en) * 2007-02-09 2010-03-01 Huga Optotech Inc Epi-structure with uneven multi-quantum well and the method thereof
DE102008035784A1 (de) 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US8129205B2 (en) * 2010-01-25 2012-03-06 Micron Technology, Inc. Solid state lighting devices and associated methods of manufacturing
DE102011012925A1 (de) * 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
RU2485630C2 (ru) * 2011-08-04 2013-06-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Томский государственный университет систем управления и радиоэлектроники Способ изготовления светодиода
US9269858B2 (en) * 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
JP7094082B2 (ja) * 2017-06-14 2022-07-01 日本ルメンタム株式会社 光半導体素子、光サブアセンブリ、及び光モジュール
CN109143764A (zh) * 2018-11-05 2019-01-04 成都菲斯特科技有限公司 成像结构、投影屏幕及投影系统

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3954534A (en) * 1974-10-29 1976-05-04 Xerox Corporation Method of forming light emitting diode array with dome geometry
TW253999B (fi) * 1993-06-30 1995-08-11 Hitachi Cable
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
JP3196833B2 (ja) * 1998-06-23 2001-08-06 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体の成長方法及びこの方法を用いた半導体発光素子の製造方法
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
JP2001102690A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化物系半導体レーザ装置
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6657236B1 (en) * 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
DE10033496A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
AU2001280097A1 (en) * 2000-08-18 2002-03-04 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light
US7053420B2 (en) * 2001-03-21 2006-05-30 Mitsubishi Cable Industries, Ltd. GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
JP2003092426A (ja) * 2001-09-18 2003-03-28 Nichia Chem Ind Ltd 窒化物系化合物半導体発光素子およびその製造方法
JP2003101157A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置及びその製造方法
US6683327B2 (en) * 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
JP3968566B2 (ja) * 2002-03-26 2007-08-29 日立電線株式会社 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス
JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
CN1484349A (zh) * 2002-09-16 2004-03-24 铼德科技股份有限公司 发光元件的微共振腔的多层反射膜及其制程
US6921804B2 (en) 2003-03-25 2005-07-26 Equistar Chemicals L.P. Cascaded polyolefin slurry polymerization employing disengagement vessel between reactors
RU2231171C1 (ru) * 2003-04-30 2004-06-20 Закрытое акционерное общество "Инновационная фирма "ТЕТИС" Светоизлучающий диод
US6781160B1 (en) * 2003-06-24 2004-08-24 United Epitaxy Company, Ltd. Semiconductor light emitting device and method for manufacturing the same
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
JPWO2005020396A1 (ja) * 2003-08-26 2006-10-19 ソニー株式会社 ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法
JP2005093682A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd ＧａＮ系半導体発光素子及びその製造方法
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자

Also Published As

Publication number Publication date
US20090127574A1 (en) 2009-05-21
CN100568560C (zh) 2009-12-09
FI20050707A0 (fi) 2005-07-01
TWI390724B (zh) 2013-03-21
CN101213676A (zh) 2008-07-02
TW200705657A (en) 2007-02-01
RU2008102874A (ru) 2009-08-10
HK1124172A1 (zh) 2009-07-03
EP1908122A4 (en) 2013-03-27
US20100314662A1 (en) 2010-12-16
KR101238310B1 (ko) 2013-02-28
JP5247439B2 (ja) 2013-07-24
RU2391746C2 (ru) 2010-06-10
KR20080034441A (ko) 2008-04-21
US7763904B2 (en) 2010-07-27
US8062913B2 (en) 2011-11-22
EP1908122A1 (en) 2008-04-09
FI118196B (fi) 2007-08-15
WO2007003684A1 (en) 2007-01-11
JP2008545261A (ja) 2008-12-11

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