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ES8601567A1 - Un metodo de eliminar una trayectoria de corriente de cortocircuito - Google Patents

Un metodo de eliminar una trayectoria de corriente de cortocircuito

Info

Publication number
ES8601567A1
ES8601567A1 ES535567A ES535567A ES8601567A1 ES 8601567 A1 ES8601567 A1 ES 8601567A1 ES 535567 A ES535567 A ES 535567A ES 535567 A ES535567 A ES 535567A ES 8601567 A1 ES8601567 A1 ES 8601567A1
Authority
ES
Spain
Prior art keywords
short circuit
circuit current
current path
light transmissive
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES535567A
Other languages
English (en)
Other versions
ES535567A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES535567A0 publication Critical patent/ES535567A0/es
Publication of ES8601567A1 publication Critical patent/ES8601567A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

PROCEDIMIENTO PARA ELIMINAR LAS TRAYECTORIAS DE CORRIENTE DE CORTOCIRCUITO EN LOS DISPOSITIVOS FOTOVOLTAICOS. EL PRIMER PASO CONSISTE EN DETECTAR LA UBICACION DE LA TRAYECTORIA DE CORRIENTE DE CORTOCIRCUITO PARA LO CUAL SE APLICA UN VOLTAJE ENTRE EL MATERIAL TRANSPARENTE CONDUCTOR Y POR LO MENOS UNA REGION ACTIVA Y SE DETECTA CUANDO LA CORRIENTE A TRAVES DEL DISPOSITIVO ESTA ENCIMA DE UN LIMITE PREDETERMINADO. EL SEGUNDO PASO CONSISTE EN AUMENTAR CONSIDERABLEMENTE LA RESISTIVIDAD DE LA TRAYECTORIA DE CORRIENTE DE CORTOCIRCUITO E INCLUYE EL PASO DE QUITAR EL MATERIAL TRANSPARENTE CONDUCTOR DE CONEXION ELECTRICA CON LA TRAYECTORIA DE CORRIENTE DE CORTOCIRCUITO.
ES535567A 1982-10-21 1984-08-31 Un metodo de eliminar una trayectoria de corriente de cortocircuito Expired ES8601567A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/435,890 US4451970A (en) 1982-10-21 1982-10-21 System and method for eliminating short circuit current paths in photovoltaic devices

Publications (2)

Publication Number Publication Date
ES535567A0 ES535567A0 (es) 1985-10-16
ES8601567A1 true ES8601567A1 (es) 1985-10-16

Family

ID=23730241

Family Applications (2)

Application Number Title Priority Date Filing Date
ES526596A Expired ES8502290A1 (es) 1982-10-21 1983-10-20 Un metodo de eliminar un paso de corriente de cortocircuito
ES535567A Expired ES8601567A1 (es) 1982-10-21 1984-08-31 Un metodo de eliminar una trayectoria de corriente de cortocircuito

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES526596A Expired ES8502290A1 (es) 1982-10-21 1983-10-20 Un metodo de eliminar un paso de corriente de cortocircuito

Country Status (11)

Country Link
US (1) US4451970A (es)
EP (1) EP0139795B1 (es)
JP (1) JPS5994473A (es)
KR (1) KR840006566A (es)
AU (1) AU2042083A (es)
BR (1) BR8305791A (es)
CA (1) CA1209233A (es)
DE (1) DE3381369D1 (es)
ES (2) ES8502290A1 (es)
IN (1) IN160220B (es)
MX (1) MX159161A (es)

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US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
JPS60254626A (ja) * 1984-05-30 1985-12-16 Sharp Corp ウエハテスト方法
JPH0673988B2 (ja) * 1984-08-14 1994-09-21 株式会社リコー 多色感熱記録方法
US4590327A (en) * 1984-09-24 1986-05-20 Energy Conversion Devices, Inc. Photovoltaic device and method
US4567642A (en) * 1984-09-28 1986-02-04 The Standard Oil Company Method of making photovoltaic modules
US4630355A (en) * 1985-03-08 1986-12-23 Energy Conversion Devices, Inc. Electric circuits having repairable circuit lines and method of making the same
JPS6258685A (ja) * 1985-09-09 1987-03-14 Fuji Electric Co Ltd 非晶質半導体太陽電池の製造方法
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
KR900006772B1 (ko) * 1985-11-06 1990-09-21 세미콘닥터 에너지 라보라토리 컴파니 리미티드 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
US4806496A (en) * 1986-01-29 1989-02-21 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing photoelectric conversion devices
US4729970A (en) * 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
JPS63210630A (ja) * 1987-02-26 1988-09-01 Kanegafuchi Chem Ind Co Ltd 平面光検出装置
US4773944A (en) * 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
US5055416A (en) * 1988-12-07 1991-10-08 Minnesota Mining And Manufacturing Company Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces
US5320723A (en) * 1990-05-07 1994-06-14 Canon Kabushiki Kaisha Method of removing short-circuit portion in photoelectric conversion device
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法
JP2686022B2 (ja) * 1992-07-01 1997-12-08 キヤノン株式会社 光起電力素子の製造方法
JPH096683A (ja) * 1995-06-19 1997-01-10 Nec Corp 情報保持機能付きメモリ装置
US5769963A (en) * 1995-08-31 1998-06-23 Canon Kabushiki Kaisha Photovoltaic device
NL1013204C2 (nl) * 1999-10-04 2001-04-05 Stichting Energie Inrichting voor het lokaliseren van productiefouten in een fotovolta´sch element.
JP2002231984A (ja) 2001-02-01 2002-08-16 Canon Inc 透明導電膜の成膜方法、半導体層の欠陥領域補償方法、光起電力素子、及びその製造方法
US6423595B1 (en) 2001-04-19 2002-07-23 United Solar Systems Corporation Method for scribing a semiconductor device
DE10393792T5 (de) * 2002-11-27 2005-11-03 The University Of Toledo, Toledo Integrierte photoelektrochemische Zelle und System mit einem flüssigen Elektrolyten
JP2004241618A (ja) * 2003-02-06 2004-08-26 Canon Inc 光起電力素子の製造方法
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
US7592975B2 (en) * 2004-08-27 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
US20100304512A1 (en) * 2007-11-30 2010-12-02 University Of Toledo System for Diagnosis and Treatment of Photovoltaic and Other Semiconductor Devices
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
US7989729B1 (en) 2008-03-11 2011-08-02 Kla-Tencor Corporation Detecting and repairing defects of photovoltaic devices
US7733111B1 (en) 2008-03-11 2010-06-08 Kla-Tencor Corporation Segmented optical and electrical testing for photovoltaic devices
WO2009120974A2 (en) * 2008-03-28 2009-10-01 University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
US20100031995A1 (en) * 2008-08-10 2010-02-11 Twin Creeks Technologies, Inc. Photovoltaic module comprising thin laminae configured to mitigate efficiency loss due to shunt formation
US20100032010A1 (en) * 2008-08-10 2010-02-11 Twin Creeks Technologies, Inc. Method to mitigate shunt formation in a photovoltaic cell comprising a thin lamina
US8338209B2 (en) * 2008-08-10 2012-12-25 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having a rear junction and method of making
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
JP5350885B2 (ja) * 2009-05-19 2013-11-27 株式会社エヌエフ回路設計ブロック 電極の分離状態検査方法、その装置及び電子デバイスの製造方法
JP2013084751A (ja) * 2011-10-07 2013-05-09 Sharp Corp 光起電力素子の欠陥修復方法および欠陥修復装置
US9564270B2 (en) 2013-12-27 2017-02-07 Tdk Corporation Thin film capacitor
CN108054278B (zh) * 2017-11-23 2021-01-15 华中科技大学 一种高良率有机太阳能电池及其制备方法

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US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
JPS5946426B2 (ja) * 1979-11-13 1984-11-12 富士電機株式会社 太陽電池の製造方法
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US4385971A (en) * 1981-06-26 1983-05-31 Rca Corporation Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells

Also Published As

Publication number Publication date
ES526596A0 (es) 1984-12-16
BR8305791A (pt) 1984-05-29
ES535567A0 (es) 1985-10-16
MX159161A (es) 1989-04-26
EP0139795B1 (en) 1990-03-21
DE3381369D1 (de) 1990-04-26
IN160220B (es) 1987-07-04
JPS5994473A (ja) 1984-05-31
ES8502290A1 (es) 1984-12-16
AU2042083A (en) 1984-05-03
US4451970A (en) 1984-06-05
JPH0566752B2 (es) 1993-09-22
CA1209233A (en) 1986-08-05
EP0139795A2 (en) 1985-05-08
KR840006566A (ko) 1984-11-30
EP0139795A3 (en) 1986-05-28

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20040611