ES441696A1 - My photodiod and procedure for its manufacture. (Machine-translation by Google Translate, not legally binding) - Google Patents
My photodiod and procedure for its manufacture. (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES441696A1 ES441696A1 ES441696A ES441696A ES441696A1 ES 441696 A1 ES441696 A1 ES 441696A1 ES 441696 A ES441696 A ES 441696A ES 441696 A ES441696 A ES 441696A ES 441696 A1 ES441696 A1 ES 441696A1
- Authority
- ES
- Spain
- Prior art keywords
- layer
- photodiod
- translation
- manufacture
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000002207 thermal evaporation Methods 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
PHOTODIOD M.I.S. WITH CR2O3 INSULATION AND MANUFACTURING PROCEDURE. IT CONSISTS OF A LAYER OF DOPED MONOCRISTALINE SILICON (A), A LAYER OF CHROME OXIDE (B) AND A TOP ELECTRODE IN GOLD OR ALUMINUM WITH TWO DIFFERENT THICKNESSES. FOR ITS MANUFACTURE IT IS BASED FROM A SILICON OLE OF 250MU THICKNESS ON WHICH, ONCE CLEAN, A CHROME LAYER IS DEPOSITED BY THERMAL EVAPORATION, FORMING CHROME OXIDE BY OXIDATION OF 450 DEGREES C. THEN DEPOSITED BY THERMAL EVAPORATION OF A 1MU THICK METAL LAYER. BY PHOTOLITHOGRAPHY A 1 MM DIAMETER WINDOW IS OPENED TO FORM A DEPRESSION IN THE METALLIC ELECTRODE. THE MAXIMUM OF THE SPECTRAL CURVE APPEARS OF 7,600 ARMSTRONG. (Machine-translation by Google Translate, not legally binding)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES441696A ES441696A1 (en) | 1975-10-10 | 1975-10-10 | My photodiod and procedure for its manufacture. (Machine-translation by Google Translate, not legally binding) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES441696A ES441696A1 (en) | 1975-10-10 | 1975-10-10 | My photodiod and procedure for its manufacture. (Machine-translation by Google Translate, not legally binding) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES441696A1 true ES441696A1 (en) | 1977-07-01 |
Family
ID=8470139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES441696A Expired ES441696A1 (en) | 1975-10-10 | 1975-10-10 | My photodiod and procedure for its manufacture. (Machine-translation by Google Translate, not legally binding) |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES441696A1 (en) |
-
1975
- 1975-10-10 ES ES441696A patent/ES441696A1/en not_active Expired
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19970701 |