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ES401405A1 - A SEMICONDUCTOR DEVICE. - Google Patents

A SEMICONDUCTOR DEVICE.

Info

Publication number
ES401405A1
ES401405A1 ES401405A ES401405A ES401405A1 ES 401405 A1 ES401405 A1 ES 401405A1 ES 401405 A ES401405 A ES 401405A ES 401405 A ES401405 A ES 401405A ES 401405 A1 ES401405 A1 ES 401405A1
Authority
ES
Spain
Prior art keywords
conductivity
type
region
regions
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES401405A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE7104496,A external-priority patent/NL170901C/en
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES401405A1 publication Critical patent/ES401405A1/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P14/61
    • H10P14/6309
    • H10P14/6322
    • H10W10/0121
    • H10W10/0126
    • H10W10/13
    • H10W74/43

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

A semiconductor device comprising a semiconductor body having at least one circuit element with at least three regions two of whose regions have a first type of conductivity and are separated by a region having a second type of conductivity opposite to the first type, in which is a tracing of insulating material that is embedded in the semiconductor body and extends in said body at least in part of its thickness from a main surface of the semiconductor body, the semiconductor body has at least one part in the form of a layer which is adjacent to the main surface and is adjacent to the embedding path along its entire circumference and in its entire thickness, in whose part in the form of a layer a first region of the two regions of the first type are disposed in their entirety. Of conductivity and the region of the second type of conductivity of the circuit element and the other of the two regio is arranged of the first type of conductivity at least partially, while the other region, insofar as it is disposed in the layer-like part, is adjacent to the path embedded along its entire circumference and the region of the second type of conductivity. Conductivity is adjacent to said embedding pattern at least along a part of its circumference and the region of the second type of conductivity is separated from the main surface at least partially by the first region, characterized in that the embedding pattern, at least in the area in which it is adjacent to the layer-shaped part, is embedded entirely in the semiconductor body in an adjacent zone having a concentration of a dopant material which can determine the second type of conductivity, said concentration being smaller than the maximum concentration of the impurifier material that determines the first type of conductivity in the other of the two regions of the first conductivity, said concentration being large enough to avoid the electrical connection between regions of the first type of conductivity located in regions of the second type of conductivity in the area of the zone. (Machine-translation by Google Translate, not legally binding)
ES401405A 1971-04-03 1972-04-01 A SEMICONDUCTOR DEVICE. Expired ES401405A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7104496,A NL170901C (en) 1971-04-03 1971-04-03 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Publications (1)

Publication Number Publication Date
ES401405A1 true ES401405A1 (en) 1975-09-01

Family

ID=19812845

Family Applications (2)

Application Number Title Priority Date Filing Date
ES401405A Expired ES401405A1 (en) 1971-04-03 1972-04-01 A SEMICONDUCTOR DEVICE.
ES428726A Expired ES428726A1 (en) 1971-04-03 1974-07-29 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES428726A Expired ES428726A1 (en) 1971-04-03 1974-07-29 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE.

Country Status (8)

Country Link
JP (1) JPS51438B1 (en)
AR (1) AR192354A1 (en)
BE (1) BE781538A (en)
BR (1) BR7201920D0 (en)
ES (2) ES401405A1 (en)
HK (1) HK59776A (en)
IT (1) IT954586B (en)
SE (1) SE381955B (en)

Also Published As

Publication number Publication date
HK59776A (en) 1976-10-01
AR192354A1 (en) 1973-02-14
JPS51438B1 (en) 1976-01-08
SE381955B (en) 1975-12-22
BE781538A (en) 1972-10-02
IT954586B (en) 1973-09-15
BR7201920D0 (en) 1973-06-07
ES428726A1 (en) 1976-09-01

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