[go: up one dir, main page]

ES2112360T3 - Componente semiconductor desconectable de alta potencia. - Google Patents

Componente semiconductor desconectable de alta potencia.

Info

Publication number
ES2112360T3
ES2112360T3 ES93111801T ES93111801T ES2112360T3 ES 2112360 T3 ES2112360 T3 ES 2112360T3 ES 93111801 T ES93111801 T ES 93111801T ES 93111801 T ES93111801 T ES 93111801T ES 2112360 T3 ES2112360 T3 ES 2112360T3
Authority
ES
Spain
Prior art keywords
contact
gate
catode
impulsable
box
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93111801T
Other languages
English (en)
Inventor
Horst Dr Gruning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB RESEARCH Ltd
ABB Research Ltd Switzerland
Original Assignee
ABB RESEARCH Ltd
ABB Research Ltd Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB RESEARCH Ltd, ABB Research Ltd Switzerland filed Critical ABB RESEARCH Ltd
Application granted granted Critical
Publication of ES2112360T3 publication Critical patent/ES2112360T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H10W76/138—

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

EN UN COMPONENTE SEMICONDUCTOR DE ALTA TENSION DESCONECTABLE, EN PARTICULAR EN FORMA DE UN GTO, CON UN SUBSTRATO (2) SEMICONDUCTOR EN FORMA DE DISCO, QUE ESTA DISPUESTO DE FORMA CONCENTRICA EN UNA CAJA (10) AISLANTE DE MODO ANULAR ENTRE UN CONTACTO (4) DE CATODO EN FORMA DE DISCO IMPULSABLE MEDIANTE PRESION Y UN CONTACTO (5) DE ANODO EN FORMA DE DISCO EVENTUALMENTE IMPULSABLE CON PRESION, SE CONTACTA SOBRE LA CARA DEL CONTACTO DE CATODO A TRAVES DE UN CONTACTO (7,21) GATE. EL CONTACTO (4) DE CATODO ESTA UNIDO POR MEDIO DE UNA PRIMERA TAPA (11A) CON LO QUE UN EXTREMO DE LA CAJA (10) AISLANTE Y EL CONTACTO (5) DE ANODO A TRAVES DE UNA SEGUNDA TAPA (11B) ESTAN UNIDOS CON EL OTRO EXTREMO DE LA CAJA (10) AISLANTE, FORMANDO UN ELEMENTO (1) COMPONENTE CERRADO DE FORMA HERMETICA HACIA AFUERA. EL CONTACTO (7) GATE ES IMPULSABLE A TRAVES DE UNA ALIMENTACION (8) GATE GUIADA HACIA AFUERA CON UNA CORRIENTE GATE, CONSIGUIENDOSE CON ELLO UNA UNION CON RESPECTO A LA UNIDAD GATE CON INDUCTIVIDAD DE ACOPLAMIENTO BAJA CON UN MINIMO EN LA ALTERACION EN COMTRAPOSICION DE LOS ELEMENTOS COMPONENTES HABITUALES. LA ALIMENTACION (8) GATE ESTA CONFIGURADA DE FORMA SIMETRICA DE ROTACION Y DISPUESTA CONCENTRICA CON RESPECTO AL CONTACTO (4) DE CATODO, ESTANDO SEPARADA LA ALIMENTACION (8) GATE DEL CONTACTO (4) DE CATODO A TRAVES DE UN AISLANTE INDIVIDUAL, SIENDO LA SEPARACION DE TIPO ELECTRICA.
ES93111801T 1992-08-15 1993-07-23 Componente semiconductor desconectable de alta potencia. Expired - Lifetime ES2112360T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4227063A DE4227063A1 (de) 1992-08-15 1992-08-15 Abschaltbares Hochleistungs-Halbleiterbauelement

Publications (1)

Publication Number Publication Date
ES2112360T3 true ES2112360T3 (es) 1998-04-01

Family

ID=6465643

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93111801T Expired - Lifetime ES2112360T3 (es) 1992-08-15 1993-07-23 Componente semiconductor desconectable de alta potencia.

Country Status (7)

Country Link
US (1) US5345096A (es)
EP (1) EP0588026B1 (es)
JP (1) JP2726222B2 (es)
KR (1) KR100305227B1 (es)
AT (1) ATE160904T1 (es)
DE (2) DE4227063A1 (es)
ES (1) ES2112360T3 (es)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469304B2 (ja) * 1994-04-12 2003-11-25 三菱電機株式会社 半導体装置
DE19505387A1 (de) * 1995-02-17 1996-08-22 Abb Management Ag Druckkontaktgehäuse für Halbleiterbauelemente
JP3291977B2 (ja) * 1995-05-31 2002-06-17 三菱電機株式会社 圧接型半導体素子及びその製造方法並びに圧接型半導体装置
DE19543702A1 (de) * 1995-11-23 1997-05-28 Asea Brown Boveri Stromrichterschaltungsanordnung
JP3191653B2 (ja) 1996-01-17 2001-07-23 三菱電機株式会社 パワーデバイス用半導体スイッチング装置
DE19615112A1 (de) * 1996-04-17 1997-10-23 Asea Brown Boveri Leistungshalbleiterbauelement
DE19708873A1 (de) * 1997-03-05 1998-09-10 Asea Brown Boveri Gateeinheit für einen hart angesteuerten GTO
DE19711965C2 (de) * 1997-03-21 1999-01-14 Siemens Ag Vorrichtung zur niederinduktiven Anbindung eines abschaltbaren Thyristors an seine Ansteuereinrichtung
DE19732738A1 (de) * 1997-07-30 1999-02-04 Asea Brown Boveri Leistungshalbleiterbauelemente mit druckausgleichender Kontaktplatte
DE19800469A1 (de) * 1998-01-09 1999-07-15 Asea Brown Boveri Niederinduktiv angesteuerter, gategesteuerter Thyristor
JP4129082B2 (ja) * 1998-07-30 2008-07-30 三菱電機株式会社 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置
EP1030355B1 (en) * 1998-09-10 2007-12-19 Mitsubishi Denki Kabushiki Kaisha Press contact semiconductor device
DE10041112B4 (de) 2000-08-22 2006-05-24 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Isolierelement
JP4781560B2 (ja) * 2001-06-08 2011-09-28 三菱電機株式会社 ゲートドライブ装置
US6498551B1 (en) * 2001-08-20 2002-12-24 Xytrans, Inc. Millimeter wave module (MMW) for microwave monolithic integrated circuit (MMIC)
EP1298733A1 (en) * 2001-09-28 2003-04-02 ABB Schweiz AG Turn-off high-power semiconductor device
EP1372197A1 (de) * 2002-06-10 2003-12-17 ABB Schweiz AG Leistungshalbleiter mit variierbaren Parametern
RU2231862C1 (ru) * 2002-11-27 2004-06-27 Новиков Александр Васильевич Силовой полупроводниковый прибор таблеточной конструкции
DE102004050588B4 (de) * 2004-10-16 2009-05-20 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Leistungshalbleiterbauelement und mit einer Kontakteinrichtung
EP1746661A1 (en) 2005-07-22 2007-01-24 ABB Technology AG Power semiconductor device
JP5040234B2 (ja) * 2006-09-26 2012-10-03 三菱電機株式会社 圧接型半導体装置
EP2071621A1 (en) * 2007-12-11 2009-06-17 ABB Research Ltd. Semiconductor switching device with gate connection
EP2161746A1 (en) 2008-09-08 2010-03-10 Converteam Technology Ltd Semiconductor switching devices
EP2548297A1 (en) 2010-03-18 2013-01-23 ABB Research Ltd. Converter cell for cascaded converters, control system and method for bypassing a faulty converter cell
GB2516079A (en) * 2013-07-10 2015-01-14 Melexis Technologies Nv Method for hermetically sealing with reduced stress
JP2015056487A (ja) * 2013-09-11 2015-03-23 株式会社東芝 半導体装置
CN109860285B (zh) * 2017-11-30 2021-05-11 株洲中车时代半导体有限公司 大功率半导体元件
CN111681995B (zh) * 2020-04-29 2022-09-09 株洲中车时代半导体有限公司 晶闸管元件、晶闸管元件装配结构及软启动器

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2049571A1 (de) * 1970-10-09 1972-04-13 Siemens Ag Halbleiterbauelement
US4008486A (en) * 1975-06-02 1977-02-15 International Rectifier Corporation Compression-assembled semiconductor device with nesting circular flanges and flexible locating ring
JPS5395583A (en) * 1977-02-01 1978-08-21 Toshiba Corp Mesa type semiconductor device
JPS5929143B2 (ja) * 1978-01-07 1984-07-18 株式会社東芝 電力用半導体装置
DE2810416C2 (de) * 1978-03-10 1983-09-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement mit Kunststoffummantelung
DE2840400C2 (de) * 1978-09-16 1982-04-08 Brown, Boveri & Cie Ag, 6800 Mannheim Steuerbares Leistungs-Halbleiterbauelement
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
DE3143336A1 (de) * 1981-10-31 1983-05-19 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleitergleichrichterbaueinheit
JPS5986260A (ja) * 1982-11-10 1984-05-18 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
DE3322593A1 (de) * 1983-06-23 1985-01-10 Klöckner-Moeller Elektrizitäts GmbH, 5300 Bonn Halbleiteranordnung und verfahren zu ihrer herstellung
JPS60194565A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置
JPS6018140A (ja) * 1984-06-19 1985-01-30 松下電器産業株式会社 電気掃除機の床用吸込具
GB2162366B (en) * 1984-07-24 1987-09-30 Westinghouse Brake & Signal Semiconductor device contact arrangements
JPS6147977A (ja) * 1984-08-16 1986-03-08 Fuji Xerox Co Ltd 電子写真複写機の磁気ブラシ現像装置
JPS61113249A (ja) * 1984-11-08 1986-05-31 Mitsubishi Electric Corp 半導体装置
JPS61208873A (ja) * 1985-03-13 1986-09-17 Res Dev Corp Of Japan 圧接構造型両面ゲ−ト静電誘導サイリスタ
JPS62101072A (ja) * 1985-10-25 1987-05-11 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
JPH088269B2 (ja) * 1986-10-22 1996-01-29 シーメンス、アクチエンゲゼルシヤフト 半導体デバイス
EP0287770B1 (de) * 1987-03-25 1993-05-05 BBC Brown Boveri AG Halbleiterbauelement mit einer Steuerelektrode
EP0320618A1 (de) * 1987-12-14 1989-06-21 BBC Brown Boveri AG Gehäuse für einen abschaltbaren Leistungsthyristor (GTO)
DE3869120D1 (de) * 1988-01-26 1992-04-16 Asea Brown Boveri Hochleistungsschalter.
EP0381849A1 (de) * 1989-02-07 1990-08-16 Asea Brown Boveri Ag Schnelle Leistungshalbleiterschaltung
JP2502386B2 (ja) * 1989-04-11 1996-05-29 富士電機株式会社 半導体装置
US4956696A (en) * 1989-08-24 1990-09-11 Sundstrand Corporation Compression loaded semiconductor device
JPH0760893B2 (ja) * 1989-11-06 1995-06-28 三菱電機株式会社 半導体装置およびその製造方法
JPH0744191B2 (ja) * 1989-12-15 1995-05-15 三菱電機株式会社 半導体装置およびそのための電極ブロック
JP3137375B2 (ja) * 1990-09-20 2001-02-19 株式会社東芝 圧接型半導体装置
EP0489945B1 (de) * 1990-12-08 2003-01-29 ABB Schweiz AG Schaltanordnung für einen HF-GTO

Also Published As

Publication number Publication date
EP0588026A2 (de) 1994-03-23
DE59307770D1 (de) 1998-01-15
EP0588026B1 (de) 1997-12-03
EP0588026A3 (en) 1994-09-07
DE4227063A1 (de) 1994-02-17
ATE160904T1 (de) 1997-12-15
KR100305227B1 (ko) 2001-11-22
JPH06188411A (ja) 1994-07-08
JP2726222B2 (ja) 1998-03-11
US5345096A (en) 1994-09-06
KR940004782A (ko) 1994-03-16

Similar Documents

Publication Publication Date Title
ES2112360T3 (es) Componente semiconductor desconectable de alta potencia.
US6373101B1 (en) Solid-state relay
GB1365714A (en) Thyristor power switching circuits
EP0843899A2 (en) High-voltage lateral mosfet soi device having a semiconductor linkup region
ES2129903T3 (es) Interruptor dependiente de la temperatura.
HK212496A (en) Storage cell arrangement and process for operating it
HK79493A (en) Integrated circuit of the complementary technique having a substrate bias generator
WO1999066539A2 (en) Lateral thin-film soi devices with graded top oxide and graded drift region
ES2064524T3 (es) Dispositivo semiconductor de alto voltaje y proceso de fabricacion.
ES8609516A1 (es) Un aparato mejorado para chapar electroliticamente superfi- cies interiores de terminales electricos que estan separadosy unidos a una tira portadora
ES2138180T3 (es) Diodo de ruptura por avalancha sin desviacion.
KR100613819B1 (ko) 실리콘 온 인슐레이터 래치 업 펄스 방사선 검출기
US6809393B1 (en) Level shifter
US5517048A (en) Pad structure with parasitic MOS transistor for use with semiconductor devices
HK87393A (en) Complementary integrated circuit with a substrate bias voltage generator and a schottky diode
US3176202A (en) Semiconductor device
WO2005006439A1 (en) Semiconductor device
US10388819B2 (en) Receiver unit
SE8005703L (sv) Dielektriskt isolerad halvledaromkopplare
GB1253823A (en) Multi-terminal semiconductor devices
GB1303338A (es)
TWI239626B (en) Structure of electrostatic discharge suppressor and method of stacking package with semiconductor devices
US11456381B2 (en) Drain-extended transistor
KR100284863B1 (ko) 반도체 집적 회로 장치
US4275308A (en) Optically toggled device

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 588026

Country of ref document: ES