EP1060401B1 - Magnetfeldsensor - Google Patents
Magnetfeldsensor Download PDFInfo
- Publication number
- EP1060401B1 EP1060401B1 EP98966795A EP98966795A EP1060401B1 EP 1060401 B1 EP1060401 B1 EP 1060401B1 EP 98966795 A EP98966795 A EP 98966795A EP 98966795 A EP98966795 A EP 98966795A EP 1060401 B1 EP1060401 B1 EP 1060401B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- magnetic field
- field sensor
- longitudinal sides
- deformable
- conductor loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims 1
- 230000005284 excitation Effects 0.000 description 15
- 238000011161 development Methods 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 12
- 238000007667 floating Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
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- 238000013459 approach Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000000418 atomic force spectrum Methods 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/028—Electrodynamic magnetometers
- G01R33/0283—Electrodynamic magnetometers in which a current or voltage is generated due to relative movement of conductor and magnetic field
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/028—Electrodynamic magnetometers
- G01R33/0286—Electrodynamic magnetometers comprising microelectromechanical systems [MEMS]
Definitions
- the present invention relates to a magnetic field sensor, and especially one in surface micromechanics technology producible magnetic field sensor.
- Magnetic field sensors can be used in a variety of ways in automotive engineering are used, for example in the anti-lock braking system (ABS) or as anti-slip control (ASR) as wheel sensors, as a position sensor for needle valves or ignition pulse generators, as a steering wheel angle sensor, as a crankshaft position sensor etc.
- ABS anti-lock braking system
- ASR anti-slip control
- wheel sensors as a position sensor for needle valves or ignition pulse generators
- a steering wheel angle sensor as a crankshaft position sensor etc.
- the requirements for these magnetic field sensors with regard to mechanical resilience, e.g. Shock resistance and temperature resistance are common extremely high.
- Magnetic field sensors that measure the force of a magnetic field use on a current-carrying conductor.
- the best known example of this is the Hall sensor.
- the object on which the present invention is based is to provide a magnetic field sensor that is high mechanical Withstands loads and high sensitivity at the same time has low temperature dependence.
- This Task is achieved by the magnetic field sensor according to the main claim solved.
- the idea underlying the present invention consists in a conductor loop whose surface modulates will, d. H. has a predefinable time dependency, as long as remains dead like no magnetic field through it passes. However, as soon as this conductor loop one Magnetic field is exposed by the surface modulation magnetic flux ⁇ is constantly changing, causing a voltage induction entails that is proportional to the magnetic flux density and to change the area over time. This tension is on tapped the ends of the conductor loop and according to the mechanical excitation evaluated. With the magnetic field sensor according to the invention both constant magnetic fields and alternating magnetic fields up to a system-related cutoff frequency become
- the conductor loop encloses an area with two in the undeformed state essentially mutually parallel long sides and deformed the deformation device the two long sides to change the enclosed area. This can be advantageously realize a large area change.
- the deformation device is designed so that it two long sides to opposing resonant bending vibrations stimulates. So it can be a particularly advantageous large area change using the resonance exaggeration realize.
- the conductor loop is is designed so that the opposing resonant Bending vibrations a different resonance frequency have as the corresponding co-directional resonants Flexural vibrations. This advantageously allows interference with the unwanted like-minded resonants Avoid bending vibrations where the net area change is essentially zero.
- the deformation device is designed so that it is the deformable Sections deformed via a capacitive coupling. So there is neither friction loss nor wear with the suggestion. They are also capacitive Excitation devices from other areas, such as Comb structures of acceleration sensors, known.
- the magnetic field sensor in the technology of surface micromechanics manufactured and has a substrate, preferably made of silicon (or another electrically conductive material) is.
- the conductor loop has essentially a rectangular shape on, the long sides of which hover above the substrate are arranged and deformable by the deformation device are and their broad sides floating on the substrate are hung.
- This embodiment has one high sensitivity with low temperature dependence on.
- the Conductor loop a continuous non-deformable first Broadside with a greater thickness than the long sides, the over at least one deformable floating web essentially the thickness of the long sides with at least is connected to a connection pad anchored in the substrate, on.
- This rigid first broadside stabilizes the width the area.
- the Conductor loop a split non-deformable second Broadside with a greater thickness than the long sides whose Parts floating over a respective deformable Bridge with essentially the thickness of the long sides with a connected to the respective connection pad anchored in the substrate is on.
- This divided rigid second broadside stabilized the width of the area also and enables a convenient tap of the induced voltage.
- This embodiment advantageously eliminates the divided rigid second broadside, so that the structure becomes simpler.
- the Long sides at their second end over a deformable floating second.
- Spring bar with essentially the thickness of the long sides with the continuous non-deformable connected first broadside.
- the An additional mass over the middle of the deformable long sides provided floating to the substrate. This additional mass serves advantageously for setting the resonance frequency.
- the deformation device one connected to the long sides Comb drive device is provided.
- This connection can either be direct by comb teeth on the long sides are provided, or be indirect by on a possible additional masses comb teeth provided are.
- Fig. 1 is a schematic illustration for explanation the measuring principle of the magnetic field sensor according to the invention.
- Fig. 1 generally denotes a conductor loop of im essentially rectangular shape, 2 deformable long sides the conductor loop 1, 3 and 3 'non-deformable broad sides the conductor loop 1, 4 and 4 'deformable webs and 5 and 6, 6 'connection pads.
- B denotes an external one Magnetic field, U an induced voltage and v the motion or direction of deformation of the long sides 2.
- the measuring principle of the magnetic field sensor according to the invention is simply that an oscillating surface change dA / dt of the surface A of the conductor loop 1 is generated by a suitable mechanical excitation, which generates an induced voltage U at the connection pads 6, 6 'in the presence of a magnetic field B.
- Absolute values can be determined by a suitable calibration or by the precise geometry of the arrangement.
- the measurement signal is then an amplitude-modulated signal with suppressed carrier. Appear in the frequency spectrum only two sidebands at a distance of +/- ⁇ around the carrier ⁇ around.
- Demodulation methods e.g. Multiplication with the carrier frequency ⁇ and subsequent low-pass filtering, can easily on the amplitude and direction or the angular velocity ⁇ of the magnetic field change can be closed.
- FIG. 2 is a schematic illustration of a first embodiment of the magnetic field sensor according to the invention.
- Fig. 2 designate in addition to those already introduced Reference numeral 20 is provided on the long sides 2 Comb structure and 70 a provided in an anchor 7 Comb structure which engages in the comb structure 20.
- This first embodiment like everyone else, is here described embodiments, in the technology of Surface micromechanics manufactured, with a Silicon substrate.
- the conductor loop 1 which is essentially a rectangular shape has its long sides 2 as thin bars and their Broad sides 3, 3 'as thicker bars floating above the Arranged substrate.
- the divided thick, i.e. non-deformable, second broadside 3 ' is over one respective thin, i.e. deformable, floating Web 4 'with the corresponding one anchored in the substrate Connection pad 6, 6 'connected.
- the comb devices 20, 70 are also suspended above the Substrate provided, the anchoring 7 in the substrate is anchored.
- the elastic connection of the conductor loop 1 to the Substrate by means of the thin webs 4, 4 ' enables a Mode separation between a movement in the same direction the flexible long sides 2, in which both in the same Direction, and an opposite movement, where both deflected in opposite directions become reachable.
- This mode separation is based that the webs 4, 4 'move in the same direction and the broad sides 3, 3 'partially resonate while during the opposite movement these components are stationary stay.
- the mechanical natural frequency of the system is thus be the same in the same direction as in the opposite movement.
- the excitation of the conductor loop 1 is determined by itself Acceleration sensors and comb drives known comb structures 20, 70 realized.
- sinusoidal voltage become electrostatic attractive forces generated, which cause the comb structure 20 in the comb structure 70 is pulled in or pushed out of it becomes.
- the mechanical deflection of the long sides 2 can be the same or an additional, similar constructed comb structure can be measured based on The mechanical excitation can take these measurement results into account their frequency and amplitude kept constant become. Keeping these mechanical parameters constant is important for an accurate measurement. Suitable control circuits, which serve for this purpose are in the state of the Technology widely known.
- a resonance excitation is expedient carried out because then on the one hand said Mode selection is possible and on the other hand mechanical Excess quality can be exploited, which leads to a reduction in leads necessary electrical excitation amplitude.
- the magnetic field sensor can reduce damping as much as possible can also be operated in negative pressure.
- FIG. 3 is a circuit diagram of the first embodiment of the magnetic field sensor according to the invention.
- Fig. 3 designate in addition to those already introduced Reference symbols U1 and U2 the excitation voltages of the comb device 70, C1 and C2 the capacitive coupling between the comb devices 20, 70, R1 to R4 equivalent resistors the corresponding conductor loop sections and DIMENSIONS that Zero potential or earth potential.
- the conductor loop 1 is a sinusoidal alternating current applied to the comb structures 20, 70, so also flows sinusoidal alternating current through resistors R3 and R4, which generates a corresponding voltage drop, which the measurement signal of the induced voltage U falsified.
- phase discrimination can be performed with resonant excitation.
- the electrostatic force relevant for the drive also has a component with the time function F 0 sin ⁇ t.
- the amplitude of movement follows at 90 ° to this force, i.e. with a time dependency cos ⁇ t, as does the disturbing current.
- the decisive factor for the voltage U induced by the magnetic field is the speed of the movement, which in turn is offset by 90 °, that is to say with a time dependency -sin ⁇ t. This results in a phase difference of 90 ° between the induced voltage U and the parasitic voltages falling across the resistors R3 and R4. The disturbing current can thus be filtered out by phase-sensitive demodulation.
- the voltage U induced by a magnetic field B is, as I said, proportional to the speed of the movement, for example the time dependency has -sin ⁇ t.
- the electrostatically generated force F 0 sin ⁇ t is proportional to the square of the electrical excitation voltage U1 or U2.
- the excitation frequency which generates a force profile F 0 sin ⁇ t, must be 1 ⁇ 2 ⁇ t.
- the voltage drop across the resistors R3 and R4 then also has a time dependency cos 1 ⁇ 2 ⁇ t. Therefore, the undesired voltage drop can be removed by electrical high-pass filtering.
- FIG. 4 is a schematic illustration of a second embodiment of the magnetic field sensor according to the invention.
- connection pads 5, 5 ' With the rigid broadside 3 connected via the webs 4 ''.
- the long sides 2 are over at their first (lower) end the deformable floating first spring bar 2 'with in essentially the thickness of the long sides 2 with the im Substrate anchored connection pad 6 or 6 'connected.
- this embodiment is only an upper one rigid broadside 3 provided.
- the long sides 2 are at their second (upper) End over the deformable floating second spring bar 2 "with essentially the thickness of the long sides 2 with the connected non-deformable first broadside 3.
- the second embodiment is functional and structurally the same as the first embodiment.
- FIG. 5 is a schematic illustration of a third embodiment of the magnetic field sensor according to the invention.
- the additional mass 8 over the Suspended substrate provided by means of which the resonance frequency the long sides 2 is tunable. That too is Comb structure 80 on the additional mass 8 instead of the comb structure 20 provided.
- the third embodiment is functional and structurally the same as the second embodiment.
- FIG. 6 is a schematic illustration of a fourth embodiment of the magnetic field sensor according to the invention.
- FIG. 7 is a schematic illustration of a fifth embodiment of the magnetic field sensor according to the invention.
- This fifth embodiment corresponds to the fourth embodiment with the addition of the additional connecting bars and the additional anchors 90 to the substrate. This additional constructive measures stabilize the additional mass 8 against disturbing torques.
- the conductor loop can of course also have a geometry other than rectangular.
- the micromechanical base material also does not have to be silicon but can be any basic material.
- the excitation of the deformable sections the conductor loop is not capacitive, but can also inductive, magnetic or in another way be carried out.
- the evaluation of the measurement signals does not have to be in the time domain but can also be done by appropriate Fourier transformations happen.
- the magnetic field sensor does not necessarily have to micromechanical component, but can be dependent a macromechanical one of the magnetic fields to be recorded Component.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
Description
"Micromechanical resonant magnetic sensor in standard DMOS", Transducers 97, Int. Conf. on Solid-State Sensors and Actuators, Seite 405-408, ein Magnetfeldsensor bekannt, bei dem jedoch die Kraftwirkung auf eine stromdurchflossene Spule in einem magnetischen Feld zur Magnetfeldmessung herangezogen wird.
- Fig. 1
- eine schematische Darstellung zur Erläuterung des Meßprinzips des erfindungsgemäßen Magnetfeldsensors;
- Fig. 2
- eine schematische Darstellung einer ersten Ausführungsform des erfindungsgemäßen Magnetfeldsensors;
- Fig. 3
- einen Stromlaufplan der ersten Ausführungsform des erfindungsgemäßen Magnetfeldsensors;
- Fig. 4
- eine schematische Darstellung einer zweiten Ausführungsform des erfindungsgemäßen Magnetfeldsensors;
- Fig. 5
- eine schematische Darstellung einer dritten Ausführungsform des erfindungsgemäßen Magnetfeldsensors;
- Fig. 6
- eine schematische Darstellung einer vierten Ausführungsform des erfindungsgemäßen Magnetfeldsensors;
- Fig. 7
- eine schematische Darstellung einer fünften Ausführungsform des erfindungsgemäßen Magnetfeldsensors.
| BEZUGSZEICHENLISTE: | |
| 1,1',1'',1''', 1'''' | Leiterschleife |
| 2 | Längsseiten |
| 3,3' | Breitseiten |
| 4,4',4",9 | Stege |
| 5,6,6' | Anschlußpads |
| B | Magnetfeld |
| U | induzierte Spannung |
| v | Geschwindigkeit |
| 7, 90 | Verankerung |
| 20, 70, 80 | Kammstrukturen |
| 2',2'',2''' | Federstege |
| 8 | Zusatzmasse |
| R1-R4 | Ersatzwiderstände |
| C1,C2 | Ersatzkapazitäten |
| U1,U2 | Anregungsspannungen |
| MASSE | Erdpotential |
Claims (10)
- Magnetfeldsensor, insbesondere in der Technologie der Oberflächenmikromechanik herstellbarer Magnetfeldsensor, mit:einer Leiterschleife (1; 1'; 1"; 1'''; 1""), welche zumindest einen deformierbaren Abschnitt (2; 2'; 2"; 2''') aufweist;einer Deformationseinrichtung (20; 7, 70; 8, 80) zum Deformieren des deformierbaren Abschnitts (2; 2'; 2"; 2"') der Leiterschleife (1; 1'; 1"; 1'''; 1"") mit einer vorbestimmbaren Zeitabhängigkeit;einer Spannungserfassungseinrichtung zum Erfassen der an den Enden der Leiterschleife (1; 1'; 1"; 1'''; 1"") beim Deformieren in Gegenwart eines Magnetfelds (B) induzierten Spannung (U);einer Magnetfeld-Ermittlungseinrichtung zum Ermitteln des gegenwärtigen statischen und/oder dynamischen Magnetfelds (B) unter Berücksichtigung von zumindest der Zeitabhängigkeit des Deformierens; unddass die Deformationseinrichtung (20; 7, 70; 8, 80) derart gestaltet ist, dass sie die deformierbaren Abschnitte durch Erzeugen von elektrostatischen Anziehungskräften über eine kapazitive Kopplung zwischen Elektroden der Deformationsstruktur (20; 7, 70; 8, 80) deformiert.
- Magnetfeldsensor nach Anspruch 1, dadurch gekennzeichnet, dass die Leiterschleife (1, 1', 1", 1''', 1'''') im undeformierten Zustand eine Fläche mit zwei im wesentlichen zueinander parallelen Längsseiten (2) umschließt und die Deformationseinrichtung (20, 7, 70, 8, 80) die zwei Längsseiten (2) zur Änderung der umschlossenen Fläche deformiert.
- Magnetfeldsensor nach Anspruch 2, dadurch gekennzeichnet, dass die Leiterschleife (1, 1', 1'', 1'", 1'''') derart gestaltet ist, dass sich bei gleichsinniger Bewegung der Längsseiten (2) Teile (4, 4', 3, 3') der Leiterschleife (1, 1', 1", 1''', 1'''') mitbewegen, während sie bei gegensinniger Bewegung der Längsseiten (2) ortsfest bleiben.
- Magnetfeldsensor nach einem der vorhergehenden Ansprüche, der in der Technologie der Oberflächenmikromechanik hergestellt ist, mit einem Substrat, das vorzugsweise aus Silizium ist, dadurch gekennzeichnet, dass daß die Leiterschleife (1; 1'; 1"; 1'''; 1"") im wesentlichen eine Rechteckform aufweist, deren Längsseiten (2) schwebend über dem Substrat angeordnet sind und durch die Deformationseinrichtung (20; 7, 70; 8, 80) deformierbar sind und deren Breitseiten (3, 3') schwebend am Substrat aufgehängt sind.
- Magnetfeldsensor nach Anspruch 4, dadurch gekennzeichnet, daß die Leiterschleife (1; 1'; 1"; 1"'; 1'''') aufweist:eine durchgehende nicht-deformierbare erste Breitseite (3) mit einer größeren Dicke als die Längsseiten (2), die über mindestens einen deformierbaren schwebenden Steg (4; 4") mit im wesentlichen der Dicke der Längsseiten (2) mit mindestens einem im Substrat verankerten Anschlußpad (5; 5') verbunden ist.
- Magnetfeldsensor nach Anspruch 4 oder 5, dadurch gekennzeichnet, daß die Leiterschleife (1; 1'; 1"; 1'''; 1"") aufweist:eine geteilte nicht-deformierbare zweite Breitseite (3') mit einer größeren Dicke als die Längsseiten (2), deren Teile über einen jeweiligen deformierbaren schwebenden Steg (4') it im wesentlichen der Dicke der Längsseiten (2) mit einem jeweiligen Substrat verankerten Anschlußpad (6; 6') verbunden ist.
- Magnetfeldsensor nach Anspruch 4 oder 5, dadurch gekennzeichnet, daß die Längsseiten (2) an ihrem ersten Ende über einen deformierbaren schwebenden ersten Federsteg (2') mit im wesentlichen der Dicke der Längsseiten (2) mit einem im Substrat verankerten Anschlußpad (6; 6') verbunden sind.
- Magnetfeldsensor nach Anspruch 5, dadurch gekennzeichnet, daß die Längsseiten (2) an ihrem zweiten Ende über einen deformierbaren schwebenden zweiten Federsteg (2 "; 2''') mit im wesentlichen der Dicke der Längsseiten (2) mit der durchgehenden nicht-deformierbaren ersten Breitseite (3) verbunden sind.
- Magnetfeldsensor nach einem der Ansprüche 4 bis 8, dadurch gekennzeichnet, daß in der Mitte der deformierbaren Längsseiten (2) eine Zusatzmasse (8) über dem Substrat schwebend vorgesehen ist.
- Magnetfeldsensor nach einem der Ansprüche 4 bis 9, dadurch gekennzeichnet, daß als Deformationseinrichtung (20; 7, 70; 8, 80) eine mit den Längsseiten (2) verbundene Kammantriebseinrichtung (7, 70) vorgesehen ist.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19809742 | 1998-03-06 | ||
| DE19809742A DE19809742A1 (de) | 1998-03-06 | 1998-03-06 | Magnetfeldsensor |
| PCT/DE1998/003748 WO1999045406A1 (de) | 1998-03-06 | 1998-12-21 | Magnetfeldsensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1060401A1 EP1060401A1 (de) | 2000-12-20 |
| EP1060401B1 true EP1060401B1 (de) | 2004-03-17 |
Family
ID=7860020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98966795A Expired - Lifetime EP1060401B1 (de) | 1998-03-06 | 1998-12-21 | Magnetfeldsensor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6486665B1 (de) |
| EP (1) | EP1060401B1 (de) |
| JP (1) | JP2002506212A (de) |
| DE (2) | DE19809742A1 (de) |
| WO (1) | WO1999045406A1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1128540A1 (de) * | 2000-02-23 | 2001-08-29 | STMicroelectronics S.r.l. | Struktur um Mikroelektromechanische Anordnungen elektrisch zu Verbinden, insbesondere Microantriebe für Festplattenantriebe |
| AU2003295167A1 (en) * | 2003-01-07 | 2004-07-29 | Sensopad Limited | Sensing apparatus and method |
| JP2006525529A (ja) | 2003-05-06 | 2006-11-09 | エスアールアイ インターナショナル | ピストンロッド位置情報をピストンロッド上の磁性層に記録するシステム及び方法 |
| US7394245B2 (en) * | 2003-09-23 | 2008-07-01 | Qinetiq Limited | Resonant magnetometer device |
| GB0329959D0 (en) * | 2003-12-24 | 2004-01-28 | Qinetiq Ltd | Magnetic field sensor |
| US7429858B2 (en) * | 2004-07-13 | 2008-09-30 | Lucent Technologies Inc. | Oscillating-beam magnetometer |
| US7259553B2 (en) | 2005-04-13 | 2007-08-21 | Sri International | System and method of magnetically sensing position of a moving component |
| WO2010034334A1 (de) * | 2008-09-26 | 2010-04-01 | Siemens Aktiengesellschaft | Verfahren und mikroelektromechanisches system zum erfassen einer messgrösse für einen durch einen elektrischen leiter fliessenden elektrischen strom sowie anordnung |
| EP2534448A4 (de) * | 2010-02-11 | 2014-09-10 | Kurt D Fulkerson | Wegmesssystem und -verfahren mithilfe magnetischer kodierungen |
| KR101046029B1 (ko) * | 2010-04-23 | 2011-07-01 | 삼성전기주식회사 | 홀 소자 및 자기 센서 회로 |
| AT515000B1 (de) * | 2013-10-23 | 2016-09-15 | Univ Wien Tech | Gradientenmagnetometer und Verfahren zur Bestimmung einer einzelnen Komponente eines Gradiententensors eines Magnetfelds |
| CN106980097B (zh) * | 2017-05-19 | 2023-10-10 | 深圳市特深电气有限公司 | 用于磁共振成像系统的鸟笼线圈及其调谐方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3731184A (en) * | 1948-12-21 | 1973-05-01 | H Goldberg | Deformable pick up coil and cooperating magnet for measuring physical quantities, with means for rendering coil output independent of orientation |
| FR998040A (fr) | 1949-09-27 | 1952-01-14 | Méthode et appareil de mesure de l'intensité de champs magnétiques utilisant des cristaux piézoélectriques | |
| DE1294550B (de) * | 1966-02-12 | 1969-05-08 | Inst Gornogo Dela Soan Sssr | Vibrationsmagnetometer |
| DE3512180C2 (de) * | 1985-04-03 | 1996-06-20 | Behlen Horst Dipl Ing Grad | Vibrationsmagnetometer |
| US5640133A (en) * | 1995-06-23 | 1997-06-17 | Cornell Research Foundation, Inc. | Capacitance based tunable micromechanical resonators |
| DE19625403A1 (de) * | 1996-06-25 | 1998-01-08 | Siemens Ag | Vorrichtung zum Messen magnetischer Feldstärken |
-
1998
- 1998-03-06 DE DE19809742A patent/DE19809742A1/de not_active Ceased
- 1998-12-21 DE DE59811023T patent/DE59811023D1/de not_active Expired - Lifetime
- 1998-12-21 US US09/623,670 patent/US6486665B1/en not_active Expired - Fee Related
- 1998-12-21 JP JP2000534888A patent/JP2002506212A/ja active Pending
- 1998-12-21 WO PCT/DE1998/003748 patent/WO1999045406A1/de not_active Ceased
- 1998-12-21 EP EP98966795A patent/EP1060401B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1060401A1 (de) | 2000-12-20 |
| JP2002506212A (ja) | 2002-02-26 |
| US6486665B1 (en) | 2002-11-26 |
| DE19809742A1 (de) | 1999-09-16 |
| DE59811023D1 (de) | 2004-04-22 |
| WO1999045406A1 (de) | 1999-09-10 |
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